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The fluid dynamics of liquid mushrooms
Authors:
Akshay Manoj Bhaskaran,
Arnov Paul,
Apurba Roy,
Devranjan Samanta,
Purbarun Dhar
Abstract:
Droplets that impact the surface of a deep liquid pool may form a vertical jet after the cavity formation event, provided they have sufficient impact energy. Depending on the associated time scales and the effect of the Rayleigh Plateau instability, this jet may either continue to rise, or may form satellite droplets via necking. Collision of these structures with a second incoming droplet, ejecte…
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Droplets that impact the surface of a deep liquid pool may form a vertical jet after the cavity formation event, provided they have sufficient impact energy. Depending on the associated time scales and the effect of the Rayleigh Plateau instability, this jet may either continue to rise, or may form satellite droplets via necking. Collision of these structures with a second incoming droplet, ejected from the same dispensing tip as the first droplet, may result in the formation of various lamellar patterns, depending on the impact conditions, giving rise to liquid mushroom and or umbrella structures. In this research, we experiment for the first time with hydrodynamics of such liquid mushrooms, and study the effect of droplet impact height, surface tension, and viscosity on the dynamics of such lamellar formations. We further explore the role of the orientation of incoming droplet impact, ie whether head on or offset collision with the rising jet or satellite droplet. We discuss the spatiotemporal evolution of the lamella diameters, and its susceptibility to surface tension, viscosity, and droplet impact height. We put forward a theoretical model based on energetics, to predict the maximum spread diameter of the lamellae, which yields accurate predictions with respect to our experiments. Our findings may help to provide important insights towards a fluid dynamic phenomenon observed often in nature and may be important in niche utilities as well.
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Submitted 28 January, 2025;
originally announced January 2025.
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Ultrathin BIC metasurfaces based on ultralow-loss Sb2Se3 phase-change material
Authors:
Zhaoyang Xie,
Chi Li,
Krishna Murali,
Haoyi Yu,
Changxu Liu,
Yiqing Lu,
Stefan A. Maier,
Madhu Bhaskaran,
Haoran Ren
Abstract:
Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly valued for their fast and more effective phase transitions and applications in reconfigurable photonic chips, metasurfaces, optical modulators, sensors, photoni…
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Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly valued for their fast and more effective phase transitions and applications in reconfigurable photonic chips, metasurfaces, optical modulators, sensors, photonic memories, and neuromorphic computing. However, conventional PCMs such as GST, GSST, VO2, and In3SbTe2, despite optimisation for tunable meta-optics, suffer from high intrinsic losses in the near-infrared (NIR) region, limiting their potential for high quality factor (Q-factor) resonant metasurfaces. Here we present the design and fabrication of tunable bound states in the continuum (BIC) metasurfaces using the ultralow-loss PCM Sb2Se3. Our BIC metasurfaces, only 25 nm thick, achieve high modulation depth and broad resonance tuning in the NIR with high Q-factors up to 130, without the need for additional materials. Experimentally, we employ these BIC metasurfaces to modulate photoluminescence in rare earth-doped upconversion nanoparticles, reducing the excitation power for multiphoton photoluminescence and enabling emission polarisation manipulation. This work offers a promising platform for developing active resonant metasurfaces in the NIR region, with broad applications including super resolution imaging, optical modulation, ultrafast switches, harmonic generation, colour filtering, and optical sensing.
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Submitted 3 October, 2024;
originally announced October 2024.
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Nanoscale compositional evolution in complex oxide based resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin L. H. Mayes,
Rajesh Ramanathan,
Paul Guagliardo,
Vipul Bansal,
Madhu Bhaskaran,
J. Joshua Yang,
Sharath Sriram
Abstract:
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional ch…
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Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].
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Submitted 30 June, 2018;
originally announced July 2018.
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High order synaptic learning in neuro-mimicking resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin Mayes,
Rajesh Ramanathan,
Vipul Bansal,
Madhu Bhaskaran,
Sharath Sriram,
Omid Kavehei
Abstract:
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming proc…
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Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming process and complicated programming hardware are among the key challenges that hinder achieving biomimetic neuromorphic networks. Here, an electroforming-free and complementary metal oxide semiconductor (CMOS)-compatible memristor based on oxygen-deficient SrTiO$_{3-x}$ (STO$_x$) is reported to imitate synaptic learning rules. Through spectroscopic and cross-sectional transmission electron microscopic analyses, electroforming-free characteristics are attributed to the bandgap reduction of STO$_x$ by the formation of oxygen vacancies. The potential of such memristors to behave as artificial synapses is demonstrated by successfully implementing high order time- and rate-dependent synaptic learning rules. Also, a simple hybrid CMOS-memristor approach is presented to implement a variety of synaptic learning rules. Results are benchmarked against biological measurements form hippocampal and visual cortices with good agreement. This demonstration is a step towards the realization of large scale adaptive neuromorphic computation and networks.
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Submitted 18 April, 2018;
originally announced April 2018.
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In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3
Authors:
Sumeet Walia,
Hussein Nili,
Sivacarendran Balendhran,
Dattatray J. Late,
Sharath Sriram,
Madhu Bhaskaran
Abstract:
Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitio…
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Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.
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Submitted 20 January, 2015; v1 submitted 17 September, 2014;
originally announced September 2014.
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Non-volatile Complementary Resistive Switch-based Content Addressable Memory
Authors:
Omid Kavehei,
Said Al-Sarawi,
Sharath Sriram,
Madhu Bhaskaran,
Kyoung-Rok Cho,
Kamran Eshraghian,
Derek Abbott
Abstract:
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application.
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application.
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Submitted 16 October, 2011; v1 submitted 18 August, 2011;
originally announced August 2011.
