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Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Authors:
B. W. Grobecker,
A. V. Poshakinskiy,
S. Anghel,
T. Mano,
G. Yusa,
M. Betz
Abstract:
This study explores the relationship between spin diffusion, spin lifetime, electron density and lateral spatial confinement in two-dimensional electron gases hosted in GaAs quantum wells. Using time-resolved magneto-optical Kerr effect microscopy, we analyze how Hall-bar channel width and back-gate voltage modulation influence spin dynamics. The results reveal that the spin diffusion coefficient…
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This study explores the relationship between spin diffusion, spin lifetime, electron density and lateral spatial confinement in two-dimensional electron gases hosted in GaAs quantum wells. Using time-resolved magneto-optical Kerr effect microscopy, we analyze how Hall-bar channel width and back-gate voltage modulation influence spin dynamics. The results reveal that the spin diffusion coefficient increases with reduced channel widths, a trend further amplified at lower electron concentrations achieved via back-gate voltages, where it increases up to 150% for the narrowest channels. The developed theoretical model confirms the spatial inhomogeneities in the spin diffusion as arising from electron-density variations within the channels. The results underscore the importance of tuning electron density and spatial geometry to optimize spin transport and coherence, providing valuable design considerations for spintronic devices where efficient spin manipulation is crucial.
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Submitted 14 January, 2025;
originally announced January 2025.
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Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime
Authors:
S. Anghel,
A. V. Poshakinskiy,
K. Schiller,
G. Yusa,
T. Mano,
T. Noda,
M. Betz
Abstract:
To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs semiconductors hosting two-dimensional electron gases. It is shown that for the establishment of the longest spin-lifetime, the variation of scattering rate with the elec…
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To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs semiconductors hosting two-dimensional electron gases. It is shown that for the establishment of the longest spin-lifetime, the variation of scattering rate with the electron density is of higher importance than the fulfilling of the persistent spin helix condition when the Rashba $α$ and Dresselhaus $β$ parameters are balanced. More specifically, regardless of the $α$ and $β$ linear dependencies on the electron density, the spin relaxation rate is determined by the spin diffusion coefficient that depends on electron density nonmonotonously. The longest experimental spin-lifetime occurs at an electron density, corresponding to the transition from Boltzmann to Fermi-Dirac statistics, which is several times higher than that when the persistent spin helix is expected. These facts highlight the role the electron density may play when considering applications for spintronic devices.
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Submitted 8 June, 2022;
originally announced June 2022.
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Non-Degenerate Two-Photon Absorption in ZnSe: Experiment and Theory
Authors:
L. Krauss-Kodytek,
W. -R. Hannes,
T. Meier,
C. Ruppert,
M. Betz
Abstract:
We experimentally and theoretically investigate the non-degenerate two-photon absorption coefficient $β(ω_1,ω_2)$ in the prototypical semiconductor ZnSe. In particular, we provide a comprehensive data set on the dependence of $β(ω_1,ω_2)$ on the non-degeneracy parameter $ω_1/ω_2$ with the total frequency sum $ω_1+ω_2$ kept constant. We find a substantial increase of the two-photon absorption stren…
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We experimentally and theoretically investigate the non-degenerate two-photon absorption coefficient $β(ω_1,ω_2)$ in the prototypical semiconductor ZnSe. In particular, we provide a comprehensive data set on the dependence of $β(ω_1,ω_2)$ on the non-degeneracy parameter $ω_1/ω_2$ with the total frequency sum $ω_1+ω_2$ kept constant. We find a substantial increase of the two-photon absorption strength with increasing $ω_1/ω_2$. In addition, different crystallographic orientations and polarization configurations are investigated. The nonlinear optical response is analyzed theoretically by evaluating the multiband semiconductor Bloch equations including inter- and intraband excitations in the length gauge. The band structure and the matrix elements are taken an eight-band k.p model. The simulation results are in very good agreement with the experiment.
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Submitted 11 August, 2021; v1 submitted 22 May, 2021;
originally announced May 2021.
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A nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays
Authors:
Jan Mundry,
Florian Spreyer,
Valentin Jmerik,
Sergey Ivanov,
Thomas Zentgraf,
Markus Betz
Abstract:
We realize and investigate a nonlinear metasurface taking advantage of intersubband transitions in ultranarrow GaN/AlN multi-quantum well heterostructures. Owing to huge band offsets, the structures offer resonant transitions in the telecom window around 1.55 $μ$m. These heterostructures are functionalized with an array of plasmonic antennas featuring cross-polarized resonances at these near-infra…
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We realize and investigate a nonlinear metasurface taking advantage of intersubband transitions in ultranarrow GaN/AlN multi-quantum well heterostructures. Owing to huge band offsets, the structures offer resonant transitions in the telecom window around 1.55 $μ$m. These heterostructures are functionalized with an array of plasmonic antennas featuring cross-polarized resonances at these near-infrared wavelengths and their second harmonic. This kind of nonlinear metasurface allows for substantial second-harmonic generation at normal incidence which is completely absent for an antenna array without the multi-quantum well structure underneath. While the second harmonic is originally radiated only into the plane of the quantum wells, a proper geometrical arrangement of the plasmonic elements permits to redirect the second-harmonic light to free-space radiation, which is emitted perpendicular to the surface.
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Submitted 20 May, 2021;
originally announced May 2021.
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Persistent Spin Helix Manipulation by Optical Doping of a CdTe Quantum Well
Authors:
F. Passmann,
S. Anghel,
T. Tischler,
A. V. Poshakinskiy,
S. A. Tarasenko,
G. Karczewski,
T. Wojtowicz,
A. D. Bristow,
M. Betz
Abstract:
Time-resolved Kerr-rotation microscopy explores the influence of optical doping on the persistent spin helix in a [001]-grown CdTe quantum well at cryogenic temperatures. Electron spin diffusion dynamics reveal a momentum-dependent effective magnetic field providing SU(2) spin-rotation symmetry, consistent with kinetic theory. The Dresselhaus and Rashba spin-orbit coupling parameters are extracted…
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Time-resolved Kerr-rotation microscopy explores the influence of optical doping on the persistent spin helix in a [001]-grown CdTe quantum well at cryogenic temperatures. Electron spin diffusion dynamics reveal a momentum-dependent effective magnetic field providing SU(2) spin-rotation symmetry, consistent with kinetic theory. The Dresselhaus and Rashba spin-orbit coupling parameters are extracted independently from rotating the spin helix with external magnetic fields applied parallel and perpendicular to the effective magnetic field. Most importantly, a non-uniform spatiotemporal precession pattern is observed. The kinetic theory framework of spin diffusion allows for modeling of this finding by incorporating the photocarrier density into the Rashba ($α$) and the Dresselhaus ($β_3$) parameters. Corresponding calculations are further validated by an excitation-density dependent measurement. This work shows universality of the persistent spin helix by its observation in a II-VI compound and the ability to fine-tune it by optical doping.
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Submitted 28 March, 2018;
originally announced March 2018.
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Gate-Control of Anisotropic Spin Transport and Spin Helix Dynamics in a Modulation-Doped GaAs Quantum Well
Authors:
S. Anghel,
F. Passmann,
A. Singh,
C. Ruppert,
A. V. Poshakinskiy,
S. A. Tarasenko,
J. N. Moore,
G. Yusa,
T. Mano,
T. Noda,
X. Li,
A. D. Bristow,
M. Betz
Abstract:
Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation micro-spectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective ma…
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Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation micro-spectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin precession length L-SOI is defined as one complete precession in the effective magnetic field. It is observed that application of (a) an out-of-plane electric field changes the spin decay time and L-SOI through the Rashba component of the spin-orbit coupling, (b) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (c) an in-plane electric field markedly modifies both the L-SOI and diffusion coefficient. While simulations reproduce the main features of the experiments, the latter results exceed the corresponding simulations and extend previous studies of drift-current-dependent spin-orbit interactions.
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Submitted 15 December, 2017; v1 submitted 30 August, 2017;
originally announced August 2017.
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Enhanced spin lifetimes in a two dimensional electron gas in a gate-controlled GaAs quantum well
Authors:
Sergiu Anghel,
Akshay Singh,
Felix Passmann,
Hikaru Iwata,
Nick Moore,
Go Yusa,
Xiaoqin Li,
Markus Betz
Abstract:
Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly…
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Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly influences the spin decay time of the two dimensional electron gas. The spin decay time can be enhanced by a factor of 3 at an intermediate carrier concentration in the quantum well, where excitons and trions coexist in the system. In addition, we explore the capability to tune the g-factor of the electron gas via the carrier density.
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Submitted 5 May, 2016;
originally announced May 2016.
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High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule
Authors:
K. Müller,
A. Bechtold,
C. Ruppert,
C. Hautmann,
J. S. Wildmann,
T. Kaldewey,
M. Bichler,
H. J. Krenner,
G. Abstreiter,
M. Betz,
J. J. Finley
Abstract:
We employ ultrafast pump-probe spectroscopy with photocurrent readout to directly probe the dynamics of a single hole spin in a single, electrically tunable self-assembled quantum dot molecule formed by vertically stacking InGaAs quantum dots. Excitons with defined spin configurations are initialized in one of the two dots using circularly polarized picosecond pulses. The time-dependent spin confi…
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We employ ultrafast pump-probe spectroscopy with photocurrent readout to directly probe the dynamics of a single hole spin in a single, electrically tunable self-assembled quantum dot molecule formed by vertically stacking InGaAs quantum dots. Excitons with defined spin configurations are initialized in one of the two dots using circularly polarized picosecond pulses. The time-dependent spin configuration is probed by the spin selective optical absorption of the resulting few Fermion complex. Taking advantage of sub-5 ps electron tunneling to an orbitally excited state of the other dot, we initialize a single hole spin with a purity of >96%, i.e., much higher than demonstrated in previous single dot experiments. Measurements in a lateral magnetic field monitor the coherent Larmor precession of the single hole spin with no observable loss of spin coherence within the ~300 ps hole lifetime. Thereby, the purity of the hole spin initialization remains unchanged for all investigated magnetic fields.
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Submitted 26 April, 2012;
originally announced April 2012.
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Excited State Quantum Couplings and Optical Switching of an Artificial Molecule
Authors:
K. Müller,
G. Reithmaier,
E. C. Clark,
V. Jovanov,
M. Bichler,
H. J. Krenner,
M. Betz,
G. Abstreiter,
J. J. Finley
Abstract:
We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossing…
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We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossings as the electric field is tuned due to the formation of hybridized electron states. We show that the observed excited state transitions occur between these hybridized electronic states and different hole states in the upper dot. By simultaneously pumping two different excited states with two laser fields we demonstrate a strong (88% on-off contrast) laser induced switching of the optical response. The results represent an electrically tunable, discrete coupled quantum system with a conditional optical response.
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Submitted 24 June, 2011; v1 submitted 15 March, 2011;
originally announced March 2011.
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All-optical Coherent Control of Electrical Currents in Single GaAs Nanowires
Authors:
C. Ruppert,
S. Thunich,
G. Abstreiter,
A. Fontcuberta i Morral,
A. W. Holleitner,
M. Betz
Abstract:
A phase-stable superposition of femtosecond pulses and their second harmonic induces ultrashort microampere current bursts in single unbiased GaAs nanowires. Current injection relies on quantum interference of one- and two-photon absorption pathways.
A phase-stable superposition of femtosecond pulses and their second harmonic induces ultrashort microampere current bursts in single unbiased GaAs nanowires. Current injection relies on quantum interference of one- and two-photon absorption pathways.
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Submitted 22 February, 2010;
originally announced February 2010.
