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Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction
Authors:
M. R. Calvo,
F. de Juan,
R. Ilan,
E. J. Fox,
A. J. Bestwick,
M. Mühlbauer,
J. Wang,
C. Ames,
P. Leubner,
C. Brüne,
S. C. Zhang,
H. Buhmann,
L. W. Molenkamp,
D. Goldhaber-Gordon
Abstract:
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives…
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We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.
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Submitted 13 December, 2017; v1 submitted 27 February, 2017;
originally announced February 2017.
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Robust fractional quantum Hall effect and composite fermions in the $N=2$ Landau level in bilayer graphene
Authors:
Georgi Diankov,
Chi-Te Liang,
Francois Amet,
Patrick Gallagher,
Menyoung Lee,
Andrew J. Bestwick,
Kevin Tharratt,
William Coniglio,
Jan Jaroszynski,
K. Watanabe,
T. Taniguchi,
David Goldhaber-Gordon
Abstract:
The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the…
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The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the sequence of filling factors $ν= p/(2mp \pm 1)$, with $m$ and $p$ positive integers. In the widely-studied GaAs-based system, the CF picture is thought to become unstable for the $N \geq 2$ LL, where larger residual interactions between CFs are predicted and competing many-body phases have been observed. Here we report transport measurements of FQH states in the $N=2$ LL (filling factors $4 < ν< 8$) in bilayer graphene, a system with spin and valley degrees of freedom in all LLs, and an additional orbital degeneracy in the 8-fold degenerate $N=0$/$N=1$ LLs. In contrast with recent observations of particle-hole asymmetry in the $N=0$/$N=1$ LLs of bilayer graphene, the FQH states we observe in the $N=2$ LL are consistent with the CF model: within a LL, they form a complete sequence of particle-hole symmetric states whose relative strength is dependent on their denominators. The FQH states in the $N=2$ LL display energy gaps of a few Kelvin, comparable to and in some cases larger than those of fractional states in the $N=0$/$N=1$ LLs. The FQH states we observe form, to the best of our knowledge, the highest set of particle-hole symmetric pairs seen in any material system.
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Submitted 29 February, 2016;
originally announced March 2016.
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Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb$_x$,Bi$_{1-x}$)$_2$Te$_3$
Authors:
Shreyas Patankar,
J. P. Hinton,
Joel Griesmar,
J. Orenstein,
J. S. Dodge,
Xufeng Kou,
Lei Pan,
Kang L. Wang,
A. J. Bestwick,
E. J. Fox,
D. Goldhaber-Gordon,
Jing Wang,
Shou-Cheng Zhang
Abstract:
We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a…
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We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a peak in the real part of $Θ_K(ω)$ and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located $\approx$ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of $Θ_K$ in the ultrathin film limit, $d\geq2$ quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for $d<8$~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
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Submitted 2 December, 2015; v1 submitted 4 May, 2015;
originally announced May 2015.
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Precise quantization of anomalous Hall effect near zero magnetic field
Authors:
A. J. Bestwick,
E. J. Fox,
Xufeng Kou,
Lei Pan,
Kang L. Wang,
D. Goldhaber-Gordon
Abstract:
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this beha…
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We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.
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Submitted 1 April, 2015; v1 submitted 9 December, 2014;
originally announced December 2014.
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Composite Fermions and Broken Symmetries in Graphene
Authors:
F. Amet,
A. J. Bestwick,
J. R. Williams,
L. Balicas,
K. Watanabe,
T. Taniguchi,
D. Goldhaber-Gordon
Abstract:
The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. I…
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The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. In this work, we observe in the first two Landau levels (v<6) the composite-fermion sequences of FQH states at p/(2p+1) between each integer filling factor. In particular, odd numerator fractions appear between v=1 and v=2, suggesting a broken valley symmetry, consistent with our observation of a gap at charge neutrality and zero field. Contrary to our expectations, the evolution of gaps in a parallel magnetic field suggests that states in the first Landau level are not spin-polarized even up to very large out of plane fields.
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Submitted 13 October, 2014;
originally announced October 2014.
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Unconventional Josephson Effect in Hybrid Superconductor-Topological Insulator Devices
Authors:
J. R. Williams,
A. J. Bestwick,
P. Gallagher,
Seung Sae Hong,
Y. Cui,
Andrew S. Bleich,
J. G. Analytis,
I. R. Fisher,
D. Goldhaber-Gordon
Abstract:
We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological mo…
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We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.
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Submitted 10 September, 2012; v1 submitted 10 February, 2012;
originally announced February 2012.
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Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons
Authors:
Judy J. Cha,
James R. Williams,
Desheng Kong,
Stefan Meister,
Hailin Peng,
Andrew J. Bestwick,
Patrick Gallagher,
David Goldhaber-Gordon,
Yi Cui
Abstract:
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume r…
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A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ~ 2%, low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics.
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Submitted 28 January, 2010;
originally announced January 2010.
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Relaxation and Dephasing in a Two-electron 13C Nanotube Double Quantum Dot
Authors:
H. O. H. Churchill,
F. Kuemmeth,
J. W. Harlow,
A. J. Bestwick,
E. I. Rashba,
K. Flensberg,
C. H. Stwertka,
T. Taychatanapat,
S. K. Watson,
C. M. Marcus
Abstract:
We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperf…
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We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperfine mediated relaxation and enhances relaxation due to soft phonons. The inhomogeneous dephasing time, T2*, is consistent with previous data on hyperfine coupling strength in 13C nanotubes.
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Submitted 19 November, 2008;
originally announced November 2008.
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Electron-nuclear interaction in 13C nanotube double quantum dots
Authors:
H. O. H. Churchill,
A. J. Bestwick,
J. W. Harlow,
F. Kuemmeth,
D. Marcos,
C. H. Stwertka,
S. K. Watson,
C. M. Marcus
Abstract:
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double…
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For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. Spin-sensitive transport in double-dot devices grown using methane with the natural abundance (~ 1%) of 13C is compared with similar devices grown using an enhanced (~99%) concentration of 13C. We observe strong isotope effects in spin-blockaded transport, and from the dependence on external magnetic field, estimate the hyperfine coupling in 13C nanotubes to be on the order of 100 micro-eV, two orders of magnitude larger than anticipated theoretically. 13C-enhanced nanotubes are an interesting new system for spin-based quantum information processing and memory, with nuclei that are strongly coupled to gate-controlled electrons, differ from nuclei in the substrate, are naturally confined to one dimension, lack quadrupolar coupling, and have a readily controllable concentration from less than one to 10^5 per electron.
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Submitted 2 December, 2008; v1 submitted 19 November, 2008;
originally announced November 2008.
