-
The nontrivial effects of annealing on superconducting properties of Nb single crystals
Authors:
Amlan Datta,
Kamal R. Joshi,
Giulia Berti,
Sunil Ghimire,
Aidan Goerdt,
Makariy A. Tanatar,
Deborah L. Schlagel,
Matthew F. Besser,
Dapeng Jing,
Matthew Kramer,
Maria Iavarone,
Ruslan Prozorov
Abstract:
The effect of annealing on the superconducting properties of niobium single crystals cut from the same master boule was studied by local and global magnetic measurements, as well as scanning tunneling microscopy (STM). The formation of large hydride precipitates was observed in unannealed samples. The variation in structural and magnetic properties was studied after annealing under high vacuum at…
▽ More
The effect of annealing on the superconducting properties of niobium single crystals cut from the same master boule was studied by local and global magnetic measurements, as well as scanning tunneling microscopy (STM). The formation of large hydride precipitates was observed in unannealed samples. The variation in structural and magnetic properties was studied after annealing under high vacuum at 800 C, 1400 C, and near the melting point of niobium (2477 C) for a few seconds. The initial samples had a high hydrogen content. Polarized optics and magneto-optical studies show that the formation of large niobium hydride precipitates is suppressed already by 800 C annealing. However, the overall superconducting properties in the annealed samples did not improve after annealing, and in fact, worsened. The superconducting transition temperature decreased, the upper critical field increased, and the pinning strength increased. Parallel studies were conducted using STM, where the sample was annealed initially at 400 C, measured, annealed again at 1700 C, and measured again. These studies revealed a ``dirty'' superconducting gap with a significant spatial variation of tunneling conductance after annealing at 400 C. The clean gap was recovered after annealing at 1700 C. It is likely that these results are due to oxygen redistribution near the surface, which is always covered by oxide layers in as-grown crystals. Overall, the results indicate that vacuum annealing at least up to 1400 C, while expected to remove a large amount of hydrogen, introduces additional nanosized defects, perhaps hydride precipitates, that act as efficient pair-breaking and pinning centers.
△ Less
Submitted 24 March, 2024;
originally announced March 2024.
-
Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP
Authors:
M. Besser,
R. D. dos Reis,
F. -R. Fan,
M. O. Ajeesh,
Y. Sun,
M. Schmidt,
C. Felser,
M. Nicklas
Abstract:
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudina…
▽ More
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron- and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a-direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B||a and B||c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B||a contrary to the results for B||c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c-direction.
△ Less
Submitted 11 April, 2019;
originally announced April 2019.
-
Highly responsive ground state of PbTaSe$_2$: structural phase transition and evolution of superconductivity under pressure
Authors:
Udhara Kaluarachchi,
Yuhang Deng,
Matthew F. Besser,
Kewei Sun,
Lin Zhou,
Manh Cuong Nguyen,
Zhujun Yuan,
Chenglong Zhang,
James S. Schilling,
Matthew J. Kramer,
Shuang Jia,
Cai-Zhuang Wang,
Kai-Ming Ho,
Paul C. Canfield,
Sergey L. Bud'ko
Abstract:
Transport and magnetic studies of PbTaSe$_2$ under pressure suggest existence of two superconducting phases with the low temperature phase boundary at $\sim 0.25$ GPa that is defined by a very sharp, first order, phase transition. The first order phase transition line can be followed via pressure dependent resistivity measurements, and is found to be near 0.12 GPa near room temperature. Transmissi…
▽ More
Transport and magnetic studies of PbTaSe$_2$ under pressure suggest existence of two superconducting phases with the low temperature phase boundary at $\sim 0.25$ GPa that is defined by a very sharp, first order, phase transition. The first order phase transition line can be followed via pressure dependent resistivity measurements, and is found to be near 0.12 GPa near room temperature. Transmission electron microscopy and x-ray diffraction at elevated temperatures confirm that this first order phase transition is structural and occurs at ambient pressure near $\sim 425$ K. The new, high temperature / high pressure phase has a similar crystal structure and slightly lower unit cell volume relative to the ambient pressure, room temperature structure. Based on first-principles calculations this structure is suggested to be obtained by shifting the Pb atoms from the $1a$ to $1e$ Wyckoff position without changing the positions of Ta and Se atoms. PbTaSe$_2$ has an exceptionally pressure sensitive, structural phase transition with $ΔT_s/ΔP \approx - 1700$ K/GPa near 4 K, this first order transition causes an $\sim 1$ K ($\sim 25 \%$) step - like decrease in $T_c$ as pressure is increased through 0.25 GPa.
△ Less
Submitted 1 February, 2017;
originally announced February 2017.
-
Unconventional phase selection in high-driven systems: A complex metastable structure prevails over simple stable phases
Authors:
Zhuo Ye,
Feng Zhang,
Yang Sun,
Manh Cuong Nguyen,
Mikhail I. Mendelev,
Ryan T. Ott,
Eun Soo Park,
Matthew Besser,
Matthew J. Kramer,
Ze-Jun Ding,
Cai-Zhuang Wang,
Kai-Ming Ho
Abstract:
Phase selection in deeply undercooled liquids and devitrified glasses during heating involves complex interplay between the barriers to nucleation and the ability for these nuclei to grow. During the devitrification of glassy alloys, complicated metastable structures often precipitate instead of simpler, more stable compounds. Here, we access this unconventional type of phase selections by investi…
▽ More
Phase selection in deeply undercooled liquids and devitrified glasses during heating involves complex interplay between the barriers to nucleation and the ability for these nuclei to grow. During the devitrification of glassy alloys, complicated metastable structures often precipitate instead of simpler, more stable compounds. Here, we access this unconventional type of phase selections by investigating an Al-10%Sm system, where a complicated cubic structure first precipitates with a large lattice parameter of 1.4 nm. We not only solve the structure of this "big cubic" phase containing ~140 atoms but establish an explicit interconnection between the structural orderings of the amorphous alloy and the cubic phase, which provides a low-barrier nucleation pathway at low temperatures. The surprising rapid growth of the crystal is attributed to its high tolerance to point defects, which minimize the short-scale atomic rearrangements to form the crystal. Our study suggests a new scenario of devitrification, where phase transformation proceeds initially without partitioning through a complex intermediate crystal phase.
△ Less
Submitted 30 January, 2015;
originally announced February 2015.
