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THz to far-infrared spectra of the known crystal polymorphs of Phenylalanine
Authors:
Thomas A. Niehaus,
Emilien Prost,
Vincent Loriot,
Franck Lépine,
Luc Bergé,
Stefan Skupin
Abstract:
There is renewed interest in the structure of the essential amino acid Phenylalanine in the solid state. Three new polymorphs were found in the years 2012 to 2014. Here, we investigate the structure, stability, and energetical ordering of these phases using first-principles simulations at the level of Density Functional Theory incorporating van-der-Waals interactions. Two of the distinct crystal f…
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There is renewed interest in the structure of the essential amino acid Phenylalanine in the solid state. Three new polymorphs were found in the years 2012 to 2014. Here, we investigate the structure, stability, and energetical ordering of these phases using first-principles simulations at the level of Density Functional Theory incorporating van-der-Waals interactions. Two of the distinct crystal forms are found to be structurally similar and energetically very close after vibrational free energy corrections have been taken into account. Infrared absorption spectra are likewise calculated and compared to experimental measurements. By combining measurements obtained with a commercial Fourier Transform Infra-Red spectrometer and a homemade air-photonics-based THz Time Domain spectrometer, we could carry out this comparison in the vibrational frequency region from 1 to 40~THz. The excellent agreement of the line positions and the established energy ranking allow us to identify the most stable polymorph of Phenylalanine.
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Submitted 16 January, 2024;
originally announced January 2024.
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Overactivated transport in the localized phase of the superconductor-insulator transition
Authors:
V. Humbert,
M. Ortũno,
A. M. Somoza,
L. Bergé,
L. Dumoulin,
C. A Marrache-Kikuchi
Abstract:
Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb_{x}Si_{1-x} close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that elec…
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Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb_{x}Si_{1-x} close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that electronic transport is activated and dominated by charging energies. The sample thickness variation results in a large spread of activation temperatures, fine-tuned via disorder. We show numerically and experimentally that the localization length varies exponentially with thickness. At the lowest temperatures, overactivated behavior is observed in the vicinity of the SIT and the increase in the activation energy can be attributed to the superconducting gap. We derive a relation between the increase in activation energy and the temperature below which overactivated behavior is observed. This relation is verified by many different quasi-2D systems.
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Submitted 17 February, 2021;
originally announced February 2021.
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Electron glass effects in amorphous NbSi films
Authors:
J. Delahaye,
T. Grenet,
C. A Marrache-Kikuchi,
V. Humbert,
L. Bergé,
L. Dumoulin
Abstract:
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width i…
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We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.
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Submitted 17 March, 2020; v1 submitted 6 January, 2020;
originally announced January 2020.
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Numerical simulations of viscous fingering in fractured porous media
Authors:
Runar Lie Berge,
Inga Berre,
Eirik Keilegavlen,
Jan Martin Nordbotten
Abstract:
The effect of heterogeneities induced by highly permeable fracture networks on viscous miscible fingering in porous media is examined using high-resolution numerical simulations. We consider the planar injection of a less viscous fluid into a two-dimensional fractured porous medium which is saturated with a more viscous fluid. This problem contains two sets of fundamentally different preferential…
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The effect of heterogeneities induced by highly permeable fracture networks on viscous miscible fingering in porous media is examined using high-resolution numerical simulations. We consider the planar injection of a less viscous fluid into a two-dimensional fractured porous medium which is saturated with a more viscous fluid. This problem contains two sets of fundamentally different preferential flow regimes; the first is caused by the viscous fingering and the second is due to the permeability contrasts between the fractures and the rock matrix. We study the transition from the regime where the flow is dominated by the viscous instabilities, to the regime where the heterogeneities induced by the fractures define the flow paths. Our findings reveal that even minor permeability differences between the rock matrix and fractures significantly influence the behavior of viscous fingering. The interplay between the viscosity contrast and permeability contrast leads to the preferential channeling of the less viscous fluid through the fractures. Consequently, this channeling process stabilizes the displacement front within the rock matrix, ultimately suppressing the occurrence of viscous fingering, particularly for higher permeability contrasts. We explore three fracture geometries; two structured and one random configuration, and identify a complex interaction between these geometries and the development of unstable flow. While we find that the most important factor determining the effect of the fracture network is the ratio of fluid volume flowing through the fractures and the rock matrix, the exact point for the cross-over regime is dependent on the geometry of the fracture network.
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Submitted 11 September, 2023; v1 submitted 25 June, 2019;
originally announced June 2019.
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Microscopic charged fluctuators as a limit to the coherence of disordered superconductor devices
Authors:
Hélène le Sueur,
Artis Svilans,
Nicolas Bourlet,
Anil Murani,
Laurent Bergé,
Louis Dumoulin,
Philippe Joyez
Abstract:
By performing experiments with thin-film resonators of NbSi, we elucidate a decoherence mechanism at work in disordered superconductors. This decoherence is caused by charged Two Level Systems (TLS) which couple to the conduction electrons in the BCS ground state; it does not involve any out-of-equilibrium quasiparticles, vortices, etc. Standard theories of mesoscopic disordered conductors enable…
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By performing experiments with thin-film resonators of NbSi, we elucidate a decoherence mechanism at work in disordered superconductors. This decoherence is caused by charged Two Level Systems (TLS) which couple to the conduction electrons in the BCS ground state; it does not involve any out-of-equilibrium quasiparticles, vortices, etc. Standard theories of mesoscopic disordered conductors enable making predictions regarding this mechanism, notably that decoherence should increase as the superconductor cross section decreases. Given the omnipresence of charged TLS in solid-state systems, this decoherence mechanism affects, to some degree, all experiments involving disordered superconductors. In particular, we show it easily explains the poor coherence observed in quantum phase slip experiments and may contribute to lowering the quality factors in some disordered superconductor resonators.
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Submitted 30 October, 2018;
originally announced October 2018.
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Sample-based calibration for cryogenic broadband microwave reflectometry measurements
Authors:
F. Couëdo,
L. Bergé,
L. Dumoulin,
M. Aprili,
C. A. Marrache-Kikuchi,
J. Gabelli
Abstract:
The characteristic frequencies of a system provide important information on the phenomena that govern its physical properties. In this framework, there has recently been renewed interest in cryogenic microwave characterization for condensed matter systems since it allows to probe energy scales of the order of a few $μ$eV. However, broadband measurements of the absolute value of a sample response i…
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The characteristic frequencies of a system provide important information on the phenomena that govern its physical properties. In this framework, there has recently been renewed interest in cryogenic microwave characterization for condensed matter systems since it allows to probe energy scales of the order of a few $μ$eV. However, broadband measurements of the absolute value of a sample response in this frequency range are extremely sensitive to its environment and require a careful calibration. In this paper, we present an \textit{in situ} calibration method for cryogenic broadband microwave reflectometry experiments that is both simple to implement and through which the effect of the sample electromagnetic environment can be minimized. The calibration references are here provided by the sample itself, at three reference temperatures where its impedance is assumed or measured, and not by external standards as is usual. We compare the frequency-dependent complex impedance (0.1--2 GHz) of an a-Nb$_{15}$Si$_{85}$ superconducting thin film obtained through this Sample-Based Calibration (SBC) and through an Open-Short-Load Standard Calibration (SC) when working at very low temperature (0.02--4 K) and show that the SBC allows us to obtain the absolute response of the sample. This method brings the calibration planes as close as possible to the sample, so that the environment electrodynamic response does not affect the measurement, provided it is temperature independent. This results in a heightened sensitivity, for a given experimental set--up.
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Submitted 8 July, 2019; v1 submitted 1 January, 2018;
originally announced January 2018.
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Dissipative phases across the superconductor-to-insulator transition
Authors:
François Couëdo,
Olivier Crauste,
Anne-Aëlle Drillien,
Vincent Humbert,
Laurent Bergé,
Claire. A. Marrache-Kikuchi,
Louis Dumoulin
Abstract:
Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions.…
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Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions. In particular, in 2D, once superconductivity is destroyed by disorder, an insulating ground state is expected to emerge, as a result of a direct superconductor-to-insulator quantum phase transition. In such systems, no metallic state is theoretically expected to survive to the slightest disorder. Here we map out the phase diagram of amorphous NbSi thin films as functions of disorder and film thickness, with two metallic phases in between the superconducting and insulating ones. These two dissipative states, defined by a resistance which extrapolates to a finite value in the zero temperature limit, each bear a specific dependence on disorder. We argue that they originate from an inhomogeneous destruction of superconductivity, even if the system is morphologically homogeneous. Our results suggest that superconducting fluctuations can favor metallic states that would not otherwise exist.
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Submitted 2 November, 2016;
originally announced November 2016.
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Destruction of superconductivity in disordered materials : a dimensional crossover
Authors:
O. Crauste,
F. Couëdo,
L. Bergé,
C. A. Marrache-Kikuchi,
L. Dumoulin
Abstract:
The disorder-induced Superconductor-to-Insulator Transition in amorphous Nb$_{x}$Si$_{1-x}$ two-dimensional thin films is studied for different niobium compositions $x$ through a variation of the sample thickness $d$. We show that the critical thickness $d_c$, separating a superconducting regime from an insulating one, increases strongly with diminishing $x$, thus attaining values of over 100 Å. T…
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The disorder-induced Superconductor-to-Insulator Transition in amorphous Nb$_{x}$Si$_{1-x}$ two-dimensional thin films is studied for different niobium compositions $x$ through a variation of the sample thickness $d$. We show that the critical thickness $d_c$, separating a superconducting regime from an insulating one, increases strongly with diminishing $x$, thus attaining values of over 100 Å. The corresponding phase diagram in the $(d, x)$ plane is inferred and related to the three-dimensional situation. The two-dimensional Superconductor-to-Insulator Transition well connects with the three-dimensional Superconductor-to-Metal Transition.
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Submitted 15 August, 2014;
originally announced August 2014.
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Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films
Authors:
Julien Delahaye,
Thierry Grenet,
C. Marrache-Kikuchi,
L. Bergé,
A. A. Drillien
Abstract:
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature…
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We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics.
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Submitted 27 June, 2014;
originally announced June 2014.
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Electron-Phonon Coupling on the NbSi Transition Edge Sensors
Authors:
Shu-chen Liu,
Stefanos Marnieros,
Louis Dumoulin,
Youri Dolgorouki,
Laurent Berge,
Sophie Collin
Abstract:
We have built an electron-phonon coupling model to describe the behavior of the NbxSi1-x transition edge sensor (TES) bolometers, fabricated by electron-beam coevaporation and photolithography techniques on a 2-inch silicon wafer. The resistance versus temperature curves of several sensors with different thickness are measured with different bias currents, ranging from 200 nA to 10 micro A, and th…
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We have built an electron-phonon coupling model to describe the behavior of the NbxSi1-x transition edge sensor (TES) bolometers, fabricated by electron-beam coevaporation and photolithography techniques on a 2-inch silicon wafer. The resistance versus temperature curves of several sensors with different thickness are measured with different bias currents, ranging from 200 nA to 10 micro A, and the electron-phonon coupling coefficient and the electron-phonon thermal conductance are calculated herein. Our values are quite comparable with those in metallic TES samples of other groups using different measurement methods, while we are using the transition region of our TES sample to calculate the electron-phonon coupling interaction.
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Submitted 15 February, 2014;
originally announced February 2014.
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Effect of annealing on the superconducting properties of a-Nb(x)Si(1-x) thin films
Authors:
O. Crauste,
A. Gentils,
F. Couëdo,
Y. Dolgorouky,
L. Bergé,
S. Collin,
C. A. Marrache-Kikuchi,
L. Dumoulin
Abstract:
a-Nb(x)Si(1-x) thin films with thicknesses down to 25 Å have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-i…
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a-Nb(x)Si(1-x) thin films with thicknesses down to 25 Å have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-insulator transition (SIT), and shown a qualitative difference between the effect of annealing or composition, and a reduction of the film thickness on the superconducting properties of a-NbSi. These results question the pertinence of the sheet resistance R_square as the relevant parameter to describe the SIT.
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Submitted 16 April, 2013;
originally announced April 2013.
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Tunable Superconducting Properties of a-NbSi Thin Films and Application to Detection in Astrophysics
Authors:
O. Crauste,
C. A. Marrache-Kikuchi,
L. Berge,
S. Collin,
Y. Dolgorouky,
S. Marnieros,
C. Nones,
L. Dumoulin
Abstract:
We report on the superconducting properties of amorphous NbxSi1-x thin films. The normal-state resistance and critical temperatures can be separately adjusted to suit the desired application. Notably, the relatively low electron-phonon coupling of these films makes them good candidates for an "all electron bolometer" for Cosmological Microwave Background radiation detection. Moreover, this device…
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We report on the superconducting properties of amorphous NbxSi1-x thin films. The normal-state resistance and critical temperatures can be separately adjusted to suit the desired application. Notably, the relatively low electron-phonon coupling of these films makes them good candidates for an "all electron bolometer" for Cosmological Microwave Background radiation detection. Moreover, this device can be made to suit both high and low impedance readouts.
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Submitted 27 February, 2011;
originally announced February 2011.
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Thickness-tuned Superconductor-to-Insulator Transitions under magnetic field in a-NbSi
Authors:
C. A. Marrache-Kikuchi,
H. Aubin,
A. Pourret,
K. Behnia,
J. Lesueur,
L. Berge,
L. Dumoulin
Abstract:
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of $ν_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal v…
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We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of $ν_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
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Submitted 13 October, 2008;
originally announced October 2008.
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A length scale for the superconducting Nernst signal above T$_{c}$ in Nb$_{0.15}$Si$_{0.85}$
Authors:
A. Pourret,
H. Aubin,
J. Lesueur,
C. A. Marrache-Kikuchi,
L. Berge,
L. Dumoulin,
K. Behnia
Abstract:
We present a study of the Nernst effect in amorphous superconducting thin films of Nb$_{0.15}$Si$_{0.85}$. The field dependence of the Nernst coefficient above T$_{c}$ displays two distinct regimes separated by a field scale set by the Ginzburg-Landau correlation length. A single function $F(ξ)$, with the correlation length as its unique argument set either by the zero-field correlation length (…
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We present a study of the Nernst effect in amorphous superconducting thin films of Nb$_{0.15}$Si$_{0.85}$. The field dependence of the Nernst coefficient above T$_{c}$ displays two distinct regimes separated by a field scale set by the Ginzburg-Landau correlation length. A single function $F(ξ)$, with the correlation length as its unique argument set either by the zero-field correlation length (in the low magnetic field limit) or by the magnetic length (in the opposite limit), describes the Nernst coefficient. We conclude that the Nernst signal observed on a wide temperature ($30 \times T_c$) and field ($4 \times B_{c2}$) range is exclusively generated by short-lived Cooper pairs.
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Submitted 16 January, 2007;
originally announced January 2007.
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Observation of the Nernst signal generated by fluctuating Cooper pairs
Authors:
A. Pourret,
H. Aubin,
J. Lesueur,
C. A. Marrache-Kikuchi,
L. Berge,
L. Dumoulin,
K. Behnia
Abstract:
Long-range order is destroyed in a superconductor warmed above its critical temperature (Tc). However, amplitude fluctuations of the superconducting order parameter survive and lead to a number of well established phenomena such as paraconductivity : an excess of charge conductivity due to the presence of short-lived Cooper pairs in the normal state. According to an untested theory, these pairs…
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Long-range order is destroyed in a superconductor warmed above its critical temperature (Tc). However, amplitude fluctuations of the superconducting order parameter survive and lead to a number of well established phenomena such as paraconductivity : an excess of charge conductivity due to the presence of short-lived Cooper pairs in the normal state. According to an untested theory, these pairs generate a transverse thermoelectric (Nernst) signal. In amorphous superconducting films, the lifetime of Cooper pairs exceeds the elastic lifetime of quasi-particles in a wide temperature range above Tc; consequently, the Cooper pairs Nernst signal dominate the response of the normal electrons well above Tc. In two dimensions, the magnitude of the expected signal depends only on universal constants and the superconducting coherence length, so the theory can be unambiguously tested. Here, we report on the observation of a Nernst signal in such a superconductor traced deep into the normal state. Since the amplitude of this signal is in excellent agreement with the theoretical prediction, the result provides the first unambiguous case for a Nernst effect produced by short-lived Cooper pairs.
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Submitted 23 July, 2006;
originally announced July 2006.
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Magnetic field-induced quantum superconductor-insulator transition in $Nb_{0.15}Si_{0.85}$
Authors:
H. Aubin,
C. A. Marrache-Kikuchi,
A. Pourret,
K. Behnia,
L. Berge,
L. Dumoulin,
J. Lesueur
Abstract:
A study of magnetic-field tuned superconductor-insulator transitions in amorphous $Nb_{0.15}Si_{0.85}$ thin films shows that quantum superconductor-insulator transitions are characterized by an unambiguous signature -- a kink in the temperature profile of the critical magnetic field. Using this criterion, we show that the nature of the magnetic-field tuned superconductor-insulator transition dep…
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A study of magnetic-field tuned superconductor-insulator transitions in amorphous $Nb_{0.15}Si_{0.85}$ thin films shows that quantum superconductor-insulator transitions are characterized by an unambiguous signature -- a kink in the temperature profile of the critical magnetic field. Using this criterion, we show that the nature of the magnetic-field tuned superconductor-insulator transition depends on the orientation of the field with respect to the film. For perpendicular magnetic field, the transition is controlled by quantum fluctuations with indications for the existence of a Bose insulator; while for parallel magnetic field, the transition is classical, driven by the breaking of Cooper pairs at the temperature dependent critical field $H_{c2}$.
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Submitted 2 January, 2006;
originally announced January 2006.
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Collapsing dynamics of attractive Bose-Einstein condensates
Authors:
L. Berge,
J. Juul Rasmussen
Abstract:
The self-similar collapse of 3D and quasi-2D atom condensates with negative scattering length is examined. 3D condensates are shown to blow up following the scenario of {\it weak collapse}: The inner core of the condensate diverges with an almost zero particle number, while its tail distribution spreads out to large distances with a constant density profile. For this case, the 3-body recombinati…
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The self-similar collapse of 3D and quasi-2D atom condensates with negative scattering length is examined. 3D condensates are shown to blow up following the scenario of {\it weak collapse}: The inner core of the condensate diverges with an almost zero particle number, while its tail distribution spreads out to large distances with a constant density profile. For this case, the 3-body recombination arrests the collapse, but it weakly dissipates the atoms. The confining trap then reforms the condensate at later times. In contrast, 2D condensates undergo a {\it strong collapse}: The atoms stay mainly located at center and recombination sequentially absorbs a significant amount of particles.
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Submitted 4 December, 2000;
originally announced December 2000.
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Stability criterion for attractive Bose-Einstein condensates
Authors:
Luc Berge,
Tristram J. Alexander,
Yuri S. Kivshar
Abstract:
A general stability criterion is derived for the D-dimensional ground states of the Gross-Pitaevskii equation, which describes attractive Bose-Einstein condensates confined in a magnetic trap. These ground states are shown to avoid the collapse in finite time and are proven to be stable in two and three spatial dimensions.
A general stability criterion is derived for the D-dimensional ground states of the Gross-Pitaevskii equation, which describes attractive Bose-Einstein condensates confined in a magnetic trap. These ground states are shown to avoid the collapse in finite time and are proven to be stable in two and three spatial dimensions.
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Submitted 31 October, 1999; v1 submitted 27 July, 1999;
originally announced July 1999.
