Showing 1–6 of 6 results for author: Bennett, K

Low Resistance P-type Contacts to Monolayer WSe$_2$ through Chlorinated Solvent Doping

Authors: Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang, Tara Pena, Zhepeng Zhang, Marisa Hocking, Ashley P. Saunders, Fang Liu, Eric Pop, Andrew J. Mannix

Abstract: Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and stable p-type doping. In monolayer WSe$_2$ transistors with Pd contacts, chloroform increases the maximum hole current by over 100$\times$ (>200 $μ$A/$μ$m), redu… ▽ More Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and stable p-type doping. In monolayer WSe$_2$ transistors with Pd contacts, chloroform increases the maximum hole current by over 100$\times$ (>200 $μ$A/$μ$m), reduces $R_\textrm{C}$ to ~2.5 k$Ω\cdotμ$m, and retains an on/off ratio of $10^{10}$ at room temperature. These improvements persist for over 8 months, survive annealing above 150 °C, and remain effective down to 10 K, enabling a cryogenic $R_\textrm{C}$ of ~1 k$Ω\cdotμ$m. Density functional theory indicates that chloroform strongly physisorbs to WSe$_2$, inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy reveal that chloroform intercalates at the WSe$_2$ interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder. This robust, scalable approach enables high-yield WSe$_2$ transistors with good p-type performance. △ Less

Submitted 29 April, 2025; originally announced April 2025.

Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

Authors: Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett, Hyun-mi Kim, Zhepeng Zhang, Marisa Hocking, Ae Rim Choi, Il-Kwon Oh, Andrew J. Mannix, Eric Pop

Abstract: Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-… ▽ More Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-gap states with conventional metal contacts. Here, we report topological semimetal NbP as p-type electrical contacts to bilayer WS2 with up to 5.8 microamperes per micron hole current at room temperature; this is the highest to date for sub 2 nm thin WS2 and more than 50 times larger than with metals like Ni or Pd. The p-type conduction is enabled by the simultaneously high work function and low density of states of the NbP, which reduce Fermi level pinning. These contacts are sputter-deposited at room temperature, an approach compatible with CMOS fabrication, a step towards enabling ultrathin WS2 semiconductors in future nanoelectronics. △ Less

Submitted 27 September, 2024; originally announced September 2024.

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

Authors: Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop

Abstract: The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This… ▽ More The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This error can be minimized by measuring transistors at high gate-source bias, |$V_\mathrm{gs}$|, but this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |$V_\mathrm{gs}$|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2$\times$. △ Less

Submitted 20 February, 2025; v1 submitted 29 April, 2024; originally announced April 2024.

Comments: Updated to include citation information for published manuscript on page 1; corrected direction of increasing channel length in Fig. 2b; minor changes to wording/phrasing throughout

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Authors: Jerry A. Yang, Robert K. A. Bennett, Lauren Hoang, Zhepeng Zhang, Kamila J. Thompson, Antonios Michail, John Parthenios, Konstantinos Papagelis, Andrew J. Mannix, Eric Pop

Abstract: Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we us… ▽ More Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS$_2$ and MoS$_2$ transistors. This approach experimentally achieves ~2x higher on-state current and mobility with ~0.3% applied biaxial strain in WS$_2$, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications. △ Less

Submitted 28 November, 2023; v1 submitted 19 September, 2023; originally announced September 2023.

Comments: Corrected author list

How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?

Authors: Robert K. A. Bennett, Eric Pop

Abstract: When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial v… ▽ More When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial variations in the potential, charge density, and density of states. At 0.5 nm EOT, the monolayer MoS$_\textrm{2}$ capacitance is smaller than its quantum capacitance, limiting the single-gated $C_\textrm{G}$ of an n-type channel to between 63% and 78% of $C_\textrm{ox}$ for gate overdrive voltages between 0.5 and 1 V. Despite these limitations, for dual-gated devices, the on-state $C_\textrm{G}$ of monolayer MoS$_\textrm{2}$ is 50% greater than that of silicon at 0.5 nm EOT and more than three times that of InGaAs at 1 nm EOT, indicating that 2D semiconductors are promising for nanoscale devices at future technology nodes. △ Less

Submitted 14 February, 2023; v1 submitted 9 January, 2023; originally announced January 2023.

Time-, Frequency-, and Wavevector-Resolved X-Ray Diffraction from Single Molecules

Authors: Kochise Bennett, Jason D. Biggs, Yu Zhang, Konstantin E. Dorfman, Shaul Mukamel

Abstract: Using a quantum electrodynamic framework, we calculate the off-resonant scattering of a broad-band X-ray pulse from a sample initially prepared in an arbitrary superposition of electronic states. The signal consists of single-particle (incoherent) and two-particle (coherent) contributions that carry different particle form factors that involve different material transitions. Single-molecule experi… ▽ More Using a quantum electrodynamic framework, we calculate the off-resonant scattering of a broad-band X-ray pulse from a sample initially prepared in an arbitrary superposition of electronic states. The signal consists of single-particle (incoherent) and two-particle (coherent) contributions that carry different particle form factors that involve different material transitions. Single-molecule experiments involving incoherent scattering are more influenced by inelastic processes compared to bulk measurements. The conditions under which the technique directly measures charge densities (and can be considered as diffraction) as opposed to correlation functions of the charge-density are specified. The results are illustrated with time- and wavevector-resolved signals from a single amino acid molecule (cysteine) following an impulsive excitation by a stimulated X-ray Raman process resonant with the sulfur K-edge. Our theory and simulations can guide future experimental studies on the structures of nano-particles and proteins. △ Less

Submitted 15 May, 2014; originally announced May 2014.