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Showing 1–6 of 6 results for author: Bennett, K

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  1. arXiv:2504.21102  [pdf

    cond-mat.mtrl-sci

    Low Resistance P-type Contacts to Monolayer WSe$_2$ through Chlorinated Solvent Doping

    Authors: Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang, Tara Pena, Zhepeng Zhang, Marisa Hocking, Ashley P. Saunders, Fang Liu, Eric Pop, Andrew J. Mannix

    Abstract: Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and stable p-type doping. In monolayer WSe$_2$ transistors with Pd contacts, chloroform increases the maximum hole current by over 100$\times$ (>200 $μ$A/$μ$m), redu… ▽ More

    Submitted 29 April, 2025; originally announced April 2025.

  2. arXiv:2409.18926  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

    Authors: Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett, Hyun-mi Kim, Zhepeng Zhang, Marisa Hocking, Ae Rim Choi, Il-Kwon Oh, Andrew J. Mannix, Eric Pop

    Abstract: Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-… ▽ More

    Submitted 27 September, 2024; originally announced September 2024.

  3. arXiv:2404.19022  [pdf

    physics.app-ph cond-mat.other

    Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

    Authors: Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop

    Abstract: The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This… ▽ More

    Submitted 20 February, 2025; v1 submitted 29 April, 2024; originally announced April 2024.

    Comments: Updated to include citation information for published manuscript on page 1; corrected direction of increasing channel length in Fig. 2b; minor changes to wording/phrasing throughout

  4. arXiv:2309.10939  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

    Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

    Authors: Jerry A. Yang, Robert K. A. Bennett, Lauren Hoang, Zhepeng Zhang, Kamila J. Thompson, Antonios Michail, John Parthenios, Konstantinos Papagelis, Andrew J. Mannix, Eric Pop

    Abstract: Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we us… ▽ More

    Submitted 28 November, 2023; v1 submitted 19 September, 2023; originally announced September 2023.

    Comments: Corrected author list

  5. arXiv:2301.03453  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

    How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?

    Authors: Robert K. A. Bennett, Eric Pop

    Abstract: When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial v… ▽ More

    Submitted 14 February, 2023; v1 submitted 9 January, 2023; originally announced January 2023.

  6. arXiv:1405.4039  [pdf, other

    physics.chem-ph cond-mat.other

    Time-, Frequency-, and Wavevector-Resolved X-Ray Diffraction from Single Molecules

    Authors: Kochise Bennett, Jason D. Biggs, Yu Zhang, Konstantin E. Dorfman, Shaul Mukamel

    Abstract: Using a quantum electrodynamic framework, we calculate the off-resonant scattering of a broad-band X-ray pulse from a sample initially prepared in an arbitrary superposition of electronic states. The signal consists of single-particle (incoherent) and two-particle (coherent) contributions that carry different particle form factors that involve different material transitions. Single-molecule experi… ▽ More

    Submitted 15 May, 2014; originally announced May 2014.