Defect engineering of silicon with ion pulses from laser acceleration
Authors:
Walid Redjem,
Ariel J. Amsellem,
Frances I. Allen,
Gabriele Benndorf,
Jianhui Bin,
Stepan Bulanov,
Eric Esarey,
Leonard C. Feldman,
Javier Ferrer Fernandez,
Javier Garcia Lopez,
Laura Geulig,
Cameron R. Geddes,
Hussein Hijazi,
Qing Ji,
Vsevolod Ivanov,
Boubacar Kante,
Anthony Gonsalves,
Jan Meijer,
Kei Nakamura,
Arun Persaud,
Ian Pong,
Lieselotte Obst-Huebl,
Peter A. Seidl,
Jacopo Simoni,
Carl Schroeder
, et al. (5 additional authors not shown)
Abstract:
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that…
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Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.
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Submitted 25 March, 2022;
originally announced March 2022.
