Showing 1–1 of 1 results for author: Benjamin, D K

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Authors: Helin Cao, Qingkai Yu, Luis A. Jauregui, Jifa Tian, Wei Wu, Zhihong Liu, Romaneh Jalilian, Daniel K. Benjamin, Zhigang Jiang, Jiming Bao, Steven S. S. Pei, Yong P. Chen

Abstract: We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, disp… ▽ More We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers. △ Less

Submitted 25 March, 2010; v1 submitted 22 October, 2009; originally announced October 2009.

Comments: shortened version, published on APL. See version 1 for more Raman data.

Report number: Suppplemental material at http://ftp.aip.org/epaps/appl_phys_lett/E-APPLAB-96-071012/Cugraphene_apl_supp.doc

Journal ref: Applied Physics Letters 96, 122106 (2010)