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Showing 1–4 of 4 results for author: Benamara, M

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  1. arXiv:2505.04096  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

    Authors: Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Sudip Acharya, Fernando Maia de Oliveira, Mourad Benamara, Haochen Zhao, Yuping Zeng, Wei Du, Gregory J. Salamo, Shui-Qing Yu

    Abstract: Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the s… ▽ More

    Submitted 6 May, 2025; originally announced May 2025.

    Comments: 12 pages,5 figures

  2. arXiv:2404.13241  [pdf

    cond-mat.mtrl-sci

    Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition

    Authors: Solomon Ojo, Juwon Onasanya, Morad Benamara, Bothina Hamad, M. O. Manasreh

    Abstract: Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering spectrum exhibits several phonon modes that were confirmed by the computation analysis based on the density functional theory. The ReS2 structural integrity was confir… ▽ More

    Submitted 19 April, 2024; originally announced April 2024.

  3. arXiv:1301.0362  [pdf

    cond-mat.mtrl-sci quant-ph

    Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

    Authors: Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo

    Abstract: High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is… ▽ More

    Submitted 11 March, 2013; v1 submitted 2 January, 2013; originally announced January 2013.

    Comments: 16 pages, 9 figure, 2 tables

    Journal ref: AIP Advances 3, 072112 (2013)

  4. Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields

    Authors: M. D. Teodoro, V. L. Campo Jr., V. Lopez-Richard, E. Marega Jr., G. E. Marques, Y. Galvao-Gobato, F. Iikawa, M. J. S. P. Brasil, Z. Y. AbuWaar, V. G. Dorogan, Yu. I. Mazur, M. Benamara, G. J. Salamo

    Abstract: We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric… ▽ More

    Submitted 3 August, 2009; originally announced August 2009.

    Comments: 6 pages, 7 figures