-
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Authors:
Diandian Zhang,
Nirosh M. Eldose,
Dinesh Baral,
Hryhorii Stanchu,
Sudip Acharya,
Fernando Maia de Oliveira,
Mourad Benamara,
Haochen Zhao,
Yuping Zeng,
Wei Du,
Gregory J. Salamo,
Shui-Qing Yu
Abstract:
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the s…
▽ More
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the substantial lattice mismatch ( about 14%) between Sn and Ge. In this work, we demonstrate the successful growth of high-quality, relaxed GeSn layers with Sn contents of 9.2% and 11.4% on Si(100) substrates via molecular beam epitaxy (MBE). As far as we know, this is the first report of direct bandgap photoluminescence observed from MBE-grown GeSn films without post-growth annealing. Structural characterizations including X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) confirm uniform Sn incorporation with minimal defect formation. Atomic force microscopy (AFM) reveals smooth surfaces with low roughness. Temperature-dependent photoluminescence (PL) measurements further confirm direct bandgap emission, representing a new stage in the development of MBE-grown GeSn.
△ Less
Submitted 6 May, 2025;
originally announced May 2025.
-
Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition
Authors:
Solomon Ojo,
Juwon Onasanya,
Morad Benamara,
Bothina Hamad,
M. O. Manasreh
Abstract:
Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering spectrum exhibits several phonon modes that were confirmed by the computation analysis based on the density functional theory. The ReS2 structural integrity was confir…
▽ More
Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering spectrum exhibits several phonon modes that were confirmed by the computation analysis based on the density functional theory. The ReS2 structural integrity was confirmed by using the XRD and the energy dispersion spectroscopy that was obtained by the scanning electron microscopy. Photoluminescence spectra show excitons related to interband transition in thin monolayer flakes and bulk-like structures. Additionally, a sharp PL line located at 1.2620 eV with a second harmonic peak at 2.5420 eV were observed and explained in terms of interband excitonic transitions originated within the rhenium 5d orbit. An optical absorbance spectrum with an exciton peak around 1.4660 eV was obtained for an assembly of ReS2 flakes grown on silica substrate.
△ Less
Submitted 19 April, 2024;
originally announced April 2024.
-
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Authors:
Zhaoquan Zeng,
Timothy A. Morgan,
Dongsheng Fan,
Chen Li,
Yusuke Hirono,
Xian Hu,
Yanfei Zhao,
Joon Sue Lee,
Zhiming M. Wang,
Jian Wang,
Shuiqing Yu,
Michael E. Hawkridge,
Mourad Benamara,
Gregory J. Salamo
Abstract:
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is…
▽ More
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.
△ Less
Submitted 11 March, 2013; v1 submitted 2 January, 2013;
originally announced January 2013.
-
Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields
Authors:
M. D. Teodoro,
V. L. Campo Jr.,
V. Lopez-Richard,
E. Marega Jr.,
G. E. Marques,
Y. Galvao-Gobato,
F. Iikawa,
M. J. S. P. Brasil,
Z. Y. AbuWaar,
V. G. Dorogan,
Yu. I. Mazur,
M. Benamara,
G. J. Salamo
Abstract:
We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric…
▽ More
We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric fields.
△ Less
Submitted 3 August, 2009;
originally announced August 2009.
