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Epitaxial magnetic perovskite nanostructures
Authors:
Dmitry Ruzmetov,
Yongho Seo,
Land J. Belenky,
D. M. Kim,
Xianglin Ke,
Haiping Sun,
Venkat Chandrasekhar,
Chang-Beom Eom,
Mark S. Rzchowski,
Xiaoqing Pan
Abstract:
Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles.
Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles.
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Submitted 12 July, 2005;
originally announced July 2005.
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Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3 / SrRuO3 bilayers
Authors:
X. Ke,
M. S. Rzchowski,
L. J. Belenky,
C. B. Eom
Abstract:
Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (), and…
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Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (), and its magnitude increases rapidly as the temperature is lowered below . The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling.
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Submitted 15 May, 2004;
originally announced May 2004.
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Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering
Authors:
A. Gurevich,
S. Patnaik,
V. Braccini,
K. H. Kim,
C. Mielke,
X. Song,
L. D. Cooley,
S. D. Bu,
D. M. Kim,
J. H. Choi,
L. J. Belenky,
J. Giencke,
M. K. Lee,
W. Tian,
X. Q. Pan,
A. Siri,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprat…
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We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor.
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Submitted 17 September, 2003; v1 submitted 20 May, 2003;
originally announced May 2003.
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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films
Authors:
S. Patnaik,
L. D. Cooley,
A. Gurevich,
A. A. Polyanskii,
J. Jiang,
X. Y. Cai,
A. A. Squitieri,
M. T. Naus,
M. K. Lee,
J. H. Choi,
L. Belenky,
S. D. Bu,
J. Letteri,
X. Song,
D. G. Schlom,
S. E. Babcock,
C. B. Eom,
E. E. Hellstrom,
D. C. Larbalestier
Abstract:
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase d…
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An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
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Submitted 28 April, 2001;
originally announced April 2001.
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Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
Authors:
C. B. Eom,
M. K. Lee,
J. H. Choi,
L. Belenky,
X. Song,
L. D. Cooley,
M. T. Naus,
S. Patnaik,
J. Jiang,
M. Rikel,
A. Polyanskii,
A. Gurevich,
X. Y. Cai,
S. D. Bu,
S. E. Babcock,
E. E. Hellstrom,
D. C. Larbalestier,
N. Rogado,
K. A. Regan,
M. A. Hayward,
T. He,
J. S. Slusky,
K. Inumaru,
M. K. Haas,
R. J. Cava
Abstract:
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superco…
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The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superconductors. A vital prerequisite, strongly linked current flow, has already been demonstrated even at this early stage. One possible drawback is the observation that the field at which superconductivity is destroyed is modest. Further, the field which limits the range of practical applications, the irreversibility field H*(T), is ~7 T at liquid helium temperature (4.2 K), significantly lower than ~10 T for Nb-Ti and ~20 T for Nb_3Sn. Here we show that MgB_2 thin films can exhibit a much steeper temperature dependence of H*(T) than is observed in bulk materials, yielding H*(4.2 K) above 14 T. In addition, very high critical current densities at 4.2 K, 1 MA/cm_2 at 1 T and 10_5 A/cm_2 at 10 T, are possible. These data demonstrate that MgB_2 has credible potential for high-field superconducting applications.
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Submitted 20 March, 2001;
originally announced March 2001.
