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Unprecedented Spin-Lifetime of Itinerant Electrons in Natural Graphite Crystals
Authors:
Bence G. Márkus,
Dávid Beke,
Lili Vajtai,
András Jánossy,
László Forró,
Ferenc Simon
Abstract:
A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $τ_{\text{s}}$ near $10$ ns at best in graphene-based devices at low temperatures. We detail the observation of $τ_{\text{s}}$ approaching the ultralong $1{,}000$~ns at room temperature in natural g…
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A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $τ_{\text{s}}$ near $10$ ns at best in graphene-based devices at low temperatures. We detail the observation of $τ_{\text{s}}$ approaching the ultralong $1{,}000$~ns at room temperature in natural graphite crystals using magnetic resonance spectroscopy. The relaxation time shows a giant anisotropy: the lifetime of spins, polarized perpendicular to the graphite plane, is more than $50$ times longer than for the in-plane polarization. The temperature dependence of $τ_{\text{s}}$ proves that diffusion of spins to the crystallite edges, where relaxation occurs, limits the lifetime. This suggests that graphite is an excellent candidate for spintronic applications, seamlessly integrating with emerging 2D van der Waals technologies.
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Submitted 10 March, 2025;
originally announced March 2025.
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Surface Chemistry-Driven Oxidation Mechanisms in Ti$_{\text{3}}$C$_{\text{2}}$T$_{\textit{x}}$ MXenes
Authors:
Bradlee J. McIntosh,
Bence G. Márkus,
Anna Nyáry,
Ferenc Simon,
László Forró,
Dávid Beke
Abstract:
Ti$_3$C$_2$T$_x$ is a leading compound within the MXenes family and can find host in widespread applications. It is synthesized by selectively etching layers from the Ti$_3$AlC$_2$ precursor, and this process typically introduces surface terminations, T$_x$, such as $-$OH, $=$O, or $-$F. However, the aggressive chemical conditions required for its preparation, as well as exposure to air, humidity,…
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Ti$_3$C$_2$T$_x$ is a leading compound within the MXenes family and can find host in widespread applications. It is synthesized by selectively etching layers from the Ti$_3$AlC$_2$ precursor, and this process typically introduces surface terminations, T$_x$, such as $-$OH, $=$O, or $-$F. However, the aggressive chemical conditions required for its preparation, as well as exposure to air, humidity, and heat, can lead to impurity phases that potentially compromise its desirable properties. We reveal a two-step oxidation process during heat treatment, where initial oxidation occurs between layers without altering the integrity of the Ti$_3$C$_2$ layered structure, followed by the formation of anatase TiO$_2$ at elevated temperatures. The process was carefully monitored using \emph{in situ} Raman spectroscopy and \emph{in situ} microwave conductivity measurements, employed to Ti$_3$C$_2$T$_x$ prepared using various etching techniques involving concentrated HF, LiF + HCl, and HF + HCl mixtures. The oxidation process is heavily influenced by the synthesis route and surface chemistry of Ti$_3$C$_2$T$_x$, with fluoride and oxyfluoride groups playing a pivotal role in stabilizing the anatase phase. The absence of these groups, in contrast, can lead to the formation of rutile TiO$_2$.
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Submitted 10 March, 2025;
originally announced March 2025.
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Thiolation and PEGylation of silicon carbide nanoparticle
Authors:
Péter Rózsa,
Olga Krafcsik,
Zsolt Czigány,
Sándor Lenk,
David Beke,
Adam Gali
Abstract:
In this study, we implement thiol termination on the surface of few-nanometer-sized silicon carbide (SiC) nanoparticles (NPs) to enable further applications, such as fluorescent biomarkers. Various spectroscopic techniques are employed to monitor the effectiveness of the surface treatment. A thiol-Michael addition reaction is performed by conjugating 4-arm PEGmaleimide molecules to the thiol group…
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In this study, we implement thiol termination on the surface of few-nanometer-sized silicon carbide (SiC) nanoparticles (NPs) to enable further applications, such as fluorescent biomarkers. Various spectroscopic techniques are employed to monitor the effectiveness of the surface treatment. A thiol-Michael addition reaction is performed by conjugating 4-arm PEGmaleimide molecules to the thiol groups of SiC NPs, further demonstrating the reactivity of thiol-terminated SiC NPs, which also acts as a protection layer against oxidation. These fluorescent thiolated SiC NPs, both with and without conjugated molecules, are directly applicable as bioinert probes. Since SiC NPs can potentially host room-temperature fluorescent defect quantum bits, our results are an important step to realize a bioinert, ultrasmall quantum sensor bioagents, which may open new avenues in biotechnology.
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Submitted 7 May, 2025; v1 submitted 12 February, 2025;
originally announced February 2025.
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Materials and spin characteristics of amino-terminated nanodiamonds embedded with nitrogen-vacancy color centers
Authors:
Nikoletta Jegenyes,
Vladimir Verkhovlyuk,
Szabolcs Czene,
Attila Csáki,
Olga Krafcsik,
Zsolt Czigány,
David Beke,
Adam Gali
Abstract:
Understanding and controlling fluorescent nanodiamonds (FNDs) with optically read qubits is a key focus of research, as they show high potential for detecting electric and magnetic fields, temperature, and other physico-chemical quantities at the nanoscale, which are highly sought after in chemistry and biology. Proper functionalization of FNDs is required for their application as probes in chemic…
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Understanding and controlling fluorescent nanodiamonds (FNDs) with optically read qubits is a key focus of research, as they show high potential for detecting electric and magnetic fields, temperature, and other physico-chemical quantities at the nanoscale, which are highly sought after in chemistry and biology. Proper functionalization of FNDs is required for their application as probes in chemical and biological processes. However, modifying the surface of FNDs can affect the properties of qubit sensors. In this work, we thoroughly study the fundamental properties of embedded nitrogen-vacancy (NV) color centers as a function of FND size and surface termination. The FNDs were produced by milling high-pressure, high-temperature diamonds, and NV centers were introduced via electron beam irradiation and annealing. In particular, the initial FNDs, covered with various oxygen groups, were homogenized through a reduction process to predominantly cover them with alcohol ($-$OH) groups as reference FNDs. Additionally, a Hofmann degradation process was applied to terminate FNDs with amine ($-$NH$_2$) groups, enabling direct linkage of proteins and other biomolecules to the FNDs. We monitored the charge state stability upon illumination, the zero-field splitting parameters, and the longitudinal spin-relaxation time of the NV centers in these FNDs. Our findings indicate that charge state stabilization of the NV centers was achieved in both $-$OH- and $-$NH$_2$-terminated FNDs beyond a certain FND size. Furthermore, we demonstrate that $-$NH$_2$-terminated FNDs embedding NV centers exhibit a $T_1$ longitudinal relaxation time of approximately 25~$μ$s, independent of FND size within the studied range of 10~nm to 140~nm. This relaxation time is comparable to that of larger-sized reference FNDs.
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Submitted 17 February, 2025; v1 submitted 11 February, 2025;
originally announced February 2025.
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Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films
Authors:
Sara Bey,
Shelby S. Fields,
Nicholas G. Combs,
Bence G. Márkus,
Dávid Beke,
Jiashu Wang,
Anton V. Ievlev,
Maksym Zhukovskyi,
Tatyana Orlova,
László Forró,
Steven P. Bennett,
Xinyu Liu,
Badih A. Assaf
Abstract:
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this…
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The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.
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Submitted 6 September, 2024;
originally announced September 2024.
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Ultrahigh nitrogen-vacancy center concentration in diamond
Authors:
S. Kollarics,
F. Simon,
A. Bojtor,
K. Koltai,
G. Klujber,
M. Szieberth,
B. G. Márkus,
D. Beke,
K. Kamarás,
A. Gali,
D. Amirari,
R. Berry,
S. Boucher,
D. Gavryushkin,
G. Jeschke,
J. P. Cleveland,
S. Takahashi,
P. Szirmai,
L. Forró,
E. Emmanouilidou,
R. Singh,
K. Holczer
Abstract:
High concentration of negatively charged nitrogen-vacancy ($\text{NV}^{-}$) centers was created in diamond single crystals containing approximately 100 ppm nitrogen using electron and neutron irradiation and subsequent thermal annealing in a stepwise manner. Continuous wave electron paramagnetic resonance (EPR) was used to determine the transformation efficiency from isolated N atoms to…
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High concentration of negatively charged nitrogen-vacancy ($\text{NV}^{-}$) centers was created in diamond single crystals containing approximately 100 ppm nitrogen using electron and neutron irradiation and subsequent thermal annealing in a stepwise manner. Continuous wave electron paramagnetic resonance (EPR) was used to determine the transformation efficiency from isolated N atoms to $\text{NV}^{-}$ centers in each production step and its highest value was as high as 17.5 %. Charged vacancies are formed after electron irradiation as shown by EPR spectra, but the thermal annealing restores the sample quality as the defect signal diminishes. We find that about 25 % of the vacancies form NVs during the annealing process. The large $\text{NV}^{-}$ concentration allows to observe orientation dependent spin-relaxation times and also the determination of the hyperfine and quadrupole coupling constants with high precision using electron spin echo (ESE) and electron-nuclear double resonance (ENDOR). We also observed the EPR signal associated with the so-called W16 centers, whose spectroscopic properties might imply a nitrogen dimer-vacancy center for its origin.
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Submitted 10 December, 2021; v1 submitted 5 October, 2021;
originally announced October 2021.
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Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu-Sn bilayers at room temperature
Authors:
H. Zaka,
S. S. Shenouda,
S. S. Fouad,
M. Medhat,
G. L. Katona,
A. Csik,
G. A. Langer,
D. L. Beke
Abstract:
Solid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6Sn5 layer. There is no indication of the appearance of the Cu3Sn phase. This offers a way for solid phase soldering at low temper…
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Solid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6Sn5 layer. There is no indication of the appearance of the Cu3Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu6Sn5 intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 x 10-15 cm2/s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.
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Submitted 6 January, 2017;
originally announced January 2017.
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Transition from anomalous kinetics towards Fickian diffusion for Si dissolution into amorphous Ge
Authors:
Z. Balogh,
Z. Erdelyi,
D. L. Beke,
G. A. Langer,
A. Csik,
Hans-Gerd Boyen,
Ulf Wiedwald,
P. Ziemann,
A. Portavoce,
Ch. Girardeaux
Abstract:
Over the last years several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution differs from the classical Fickian law (kc=0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous-Si layer into amorphous-Ge to account for the rising importance of a…
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Over the last years several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution differs from the classical Fickian law (kc=0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous-Si layer into amorphous-Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive technics, the initial kc was found at 0.7+-0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc=0.5.
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Submitted 12 February, 2009;
originally announced February 2009.
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Degradation of Ag/Si multilayers during heat treatments
Authors:
K. Kapta,
L. Daroczi,
Z. Papp,
D. L. Beke,
G. A. Langer,
A. Csik,
M. Kis-Varga,
A. L. Greer,
Z. H. Barber
Abstract:
Microstructure changes during annealing of nano-crystalline silver and amorphous silicon multilayers (Ag/a-Si) have been studied by X-ray diffraction and transmission electron microscopy. The dc-magnetron sputtered Ag/a-Si multilayers remained stable even after annealing at 523K for 10h, and microstructural changes occurred only above 600K. The degradation of Ag/a-Si multilayers can be described…
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Microstructure changes during annealing of nano-crystalline silver and amorphous silicon multilayers (Ag/a-Si) have been studied by X-ray diffraction and transmission electron microscopy. The dc-magnetron sputtered Ag/a-Si multilayers remained stable even after annealing at 523K for 10h, and microstructural changes occurred only above 600K. The degradation of Ag/a-Si multilayers can be described by the increase of size of Ag grains, formation of grooves and pinholes at Ag grain boundaries and by the diffusion of silicon atoms through the silver grain boundaries and along the Ag/a-Si interfaces. This results in thinning of a-Si layers, and in formation of Ag granulates after longer annealing times.
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Submitted 12 February, 2009;
originally announced February 2009.
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Laser-induced optical changes in amorphous multilayers
Authors:
M. Malyovanik,
S. Ivan,
A. Csik,
G. A. Langer,
D. L. Beke,
S. Kokenyesi
Abstract:
It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As6Se94/Se80Te20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers. The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both…
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It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As6Se94/Se80Te20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers. The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both the local heating and photo-effects in As6Se94/Se80Te20 multilayers, while only the thermal effects were observed for Si/Ge multilayers. Structural transformations, based on this enhanced interdiffusion, provides good capability for spatially patterning optoelectronic devices and digital information recording.
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Submitted 12 February, 2009;
originally announced February 2009.
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Pattern formation in SiSb system
Authors:
A. Csik,
G. Erdelyi,
G. A. Langer,
L. Daroczi,
D. L. Beke,
J. Nyeki,
Z. Erdelyi
Abstract:
Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy (TEM), stripe-shaped contrast, with three maxima, parallel with the interfaces can be seen. Secondary neutral mass spectrometer (SNMS) measurements revea…
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Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy (TEM), stripe-shaped contrast, with three maxima, parallel with the interfaces can be seen. Secondary neutral mass spectrometer (SNMS) measurements revealed that the regions with different contrasts correspond to Sb-rich and Sb-depleted regions. Furthermore, the Sb concentration peaks in the Sb-rich regions, especially at longer annealing times, are different: the peak developed at the Si/SiSb interface closer to the free surface decays faster than that of the inner one closer to the substrate. The pattern formation is interpreted by segregation-initiated spinodal-like decomposition, while the difference of the Sb concentration peaks is explained by the resultant Sb transport to and evaporation from the free surface. The possible role of formation of nanocrystalline grains, in the explanation of the fast transport under pressure as compared to vacuum is also discussed.
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Submitted 12 February, 2009;
originally announced February 2009.
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Investigation of Sb diffusion in amorphous silicon
Authors:
A. Csik,
G. A. Langer,
G. Erdelyi,
D. L. Beke,
Z. Erdelyi,
K. Vad
Abstract:
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spe…
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Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry (SNMS). Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were prepared by DC magnetron sputtering onto Si substrate at room temperature. Annealing of the samples were performed at different temperature in vacuum (p<10-7 mbar) and 100 bar high purity (99.999%) Ar pressure. During annealing a rather slow mixing between the Sb-alloyed and the amorphous Si layers was observed. Supposing concentration independent diffusion, the evaluated diffusion coefficients are in the range of ~10-21 m2s-1 at 823 K.
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Submitted 12 February, 2009;
originally announced February 2009.
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Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
Authors:
C. Frigeri,
M. Serenyi,
A. Csik,
Z. Erdelyi,
D. L. Beke,
L. Nasi
Abstract:
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface…
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A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.
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Submitted 11 February, 2009;
originally announced February 2009.
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AFM and TEM study of hydrogenated sputtered Si/Ge multilayers
Authors:
C. Frigeri,
L. Nasi,
M. Serenyi,
A. Csik,
Z. Erdelyi,
D. L. Beke
Abstract:
Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with inc…
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Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented.
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Submitted 10 February, 2009;
originally announced February 2009.
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Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers
Authors:
A. Csik,
M. Serenyi,
Z. Erdelyi,
A. Nemcsics,
C. Cserhati,
G. A. Langer,
D. L. Beke,
C. Frigeri,
A. Simon
Abstract:
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentrati…
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Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing H2 flow-rate. Annealing of the samples was carried out at 400 and 450 oC for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 oC, but at 400 oC the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 oC, as well as, at 400oC in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.
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Submitted 10 February, 2009;
originally announced February 2009.
