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Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers
Authors:
M. Ehlert,
H. S. Körner,
T. Hupfauer,
M. Schitko,
G. Bayreuther,
D. Weiss
Abstract:
We report on a comprehensive study of the magnetic coupling between soft magnetic Fe layers and hard magnetic Dysprosium (Dy) layers at low temperatures (4.2 - 120K). For our experiments we prepared thin films of Fe and Dy and multilayers of Fe/Dy by ultra-high vacuum sputtering. The magnetic properties of each material were determined with a superconducting quantum interference device. Furthermor…
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We report on a comprehensive study of the magnetic coupling between soft magnetic Fe layers and hard magnetic Dysprosium (Dy) layers at low temperatures (4.2 - 120K). For our experiments we prepared thin films of Fe and Dy and multilayers of Fe/Dy by ultra-high vacuum sputtering. The magnetic properties of each material were determined with a superconducting quantum interference device. Furthermore, we performed magnetoresistance measurements with similarly grown, microstructured devices, where the anisotropic magnetoresistance (AMR) effect was used to identify the magnetization state of the samples. By analyzing and comparing the corresponding data of Fe and Dy, we show that the presence of a Dy layer on top of the Fe layer significantly influences its magnetic properties and makes it magnetically harder. We perform a systematic evaluation of this effect and its dependence on temperature and on the thickness of the soft magnetic layer. All experimental results can consistently be explained with exchange coupling at the interface between the Fe and the Dy layer. Our experiments also yield a negative sign of the AMR effect of thin Dy films, and an increase of the Dy films' Curie temperature, which is due to growth conditions.
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Submitted 10 April, 2018;
originally announced April 2018.
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Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips
Authors:
D. Steininger,
A. K. Huettel,
M. Ziola,
M. Kiessling,
M. Sperl,
G. Bayreuther,
Ch. Strunk
Abstract:
We investigate submicron ferromagnetic PdNi thin-film strips intended as contact electrodes for carbon nanotube-based spintronic devices. The magnetic anisotropy and micromagnetic structure are measured as function of temperature and aspect ratio. Contrary to the expectation from shape anisotropy, magnetic hysteresis measurements of Pd0.3Ni0.7 on arrays containing strips of various width point tow…
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We investigate submicron ferromagnetic PdNi thin-film strips intended as contact electrodes for carbon nanotube-based spintronic devices. The magnetic anisotropy and micromagnetic structure are measured as function of temperature and aspect ratio. Contrary to the expectation from shape anisotropy, magnetic hysteresis measurements of Pd0.3Ni0.7 on arrays containing strips of various width point towards a magnetically easy axis in the sample plane, but transversal to the strip direction. Anisotropic magnetoresistance measured on individual Pd0.3Ni0.7 contact strips and magnetic force microscopy images substantiate that conclusion.
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Submitted 28 December, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
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Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel
Authors:
Bernhard Endres,
Mariusz Ciorga,
Robert Wagner,
Sebastian Ringer,
Martin Utz,
Dominique Bougeard,
Dieter Weiss,
Christian H. Back,
Günther Bayreuther
Abstract:
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion frequent…
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The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion frequently used cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.
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Submitted 8 February, 2012; v1 submitted 7 November, 2011;
originally announced November 2011.
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Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions
Authors:
J. Moser,
M. Zenger,
C. Gerl,
D. Schuh,
R. Meier,
P. Chen,
G. Bayreuther,
W. Wegscheider,
D. Weiss,
C. -H. Lai,
R. -T. Huang,
M. Kosuth,
H. Ebert
Abstract:
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the…
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We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.
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Submitted 26 July, 2006;
originally announced July 2006.
