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Capillary wave formation in conserved active emulsions
Authors:
Florian Raßhofer,
Simon Bauer,
Alexander Ziepke,
Ivan Maryshev,
Erwin Frey
Abstract:
The dynamics of phase-separated interfaces shape the behavior of both passive and active condensates. While surface tension in equilibrium systems minimizes interface length, non-equilibrium fluxes can destabilize flat or constantly curved interfaces, giving rise to complex interface morphologies. Starting from a minimal model that couples a conserved, phase-separating species to a self-generated…
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The dynamics of phase-separated interfaces shape the behavior of both passive and active condensates. While surface tension in equilibrium systems minimizes interface length, non-equilibrium fluxes can destabilize flat or constantly curved interfaces, giving rise to complex interface morphologies. Starting from a minimal model that couples a conserved, phase-separating species to a self-generated chemical field, we identify the conditions under which interfacial instabilities may emerge. Specifically, we show that non-reciprocal chemotactic interactions induce two distinct types of instabilities: a stationary (non-oscillatory) instability that promotes interface deformations, and an oscillatory instability that can give rise to persistent capillary waves propagating along the boundaries of phase-separated domains. To characterize these phenomena, we develop a perturbative framework that predicts the onset, wavelength, and velocity of capillary waves, and quantitatively validate these predictions through numerical simulations. Beyond the linear regime, our simulations reveal that capillary waves undergo a secondary instability, leading to either stationary or dynamically evolving superpositions of different wave modes. Finally, we investigate whether capillary waves can facilitate directed mass transport, either along phase boundaries (conveyor belts) or through self-sustained liquid gears crawling along a solid wall. Taken together, our results establish a general framework for interfacial dynamics in active phase-separating systems and suggest new strategies for controlling mass transport in soft matter and biological condensates.
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Submitted 26 May, 2025;
originally announced May 2025.
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Surfactants Screen Slide Electrification
Authors:
Xiaomei Li,
Zhongyuan Ni,
Xiaoteng Zhou,
Lisa S. Bauer,
Diego Diaz,
Gabriele Schäfer,
Hans-Jürgen Butt
Abstract:
Water drops spontaneously accumulate charges when they move on hydrophobic dielectric surfaces by slide electrification. On the one hand, slide electrification generates electricity with possible applications on tiny devices. On the other hand, the potential of up to 1 KV generated by slide electrification alters wetting and drop motion. Therefore, it is important to know the factors that affect s…
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Water drops spontaneously accumulate charges when they move on hydrophobic dielectric surfaces by slide electrification. On the one hand, slide electrification generates electricity with possible applications on tiny devices. On the other hand, the potential of up to 1 KV generated by slide electrification alters wetting and drop motion. Therefore, it is important to know the factors that affect slide electrification. To find out how surfactants affect slide electrification, we measured drop charges of aqueous drops containing cationic CTAB, anionic SDS and neutral C8E3 sliding on different hydrophobic surfaces. The result is: addition of surfactant significantly reduces the spontaneous charging of moving water drops. Based on zeta potential measurements, confocal microscopy of deposited surface-active dyes and drop impact studies, we propose that several factors contribute to this suppression of charge separation: (1) Surfactants tend to lower the contact angles, which reduces charge separation. (2) Surfactant adsorption at the solid-liquid interface can reduce the density of primary ions, particularly for anionic surfactants. (3) Anionic and neutral surfactants are mostly transferred to the liquid-air interface at the rear of the sliding drop, retaining primary ions within the drop. (4) Deposited cationic surfactant directly reduces the charge of the drop.
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Submitted 1 April, 2025;
originally announced April 2025.
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Roadmap on Data-Centric Materials Science
Authors:
Stefan Bauer,
Peter Benner,
Tristan Bereau,
Volker Blum,
Mario Boley,
Christian Carbogno,
C. Richard A. Catlow,
Gerhard Dehm,
Sebastian Eibl,
Ralph Ernstorfer,
Ádám Fekete,
Lucas Foppa,
Peter Fratzl,
Christoph Freysoldt,
Baptiste Gault,
Luca M. Ghiringhelli,
Sajal K. Giri,
Anton Gladyshev,
Pawan Goyal,
Jason Hattrick-Simpers,
Lara Kabalan,
Petr Karpov,
Mohammad S. Khorrami,
Christoph Koch,
Sebastian Kokott
, et al. (36 additional authors not shown)
Abstract:
Science is and always has been based on data, but the terms "data-centric" and the "4th paradigm of" materials research indicate a radical change in how information is retrieved, handled and research is performed. It signifies a transformative shift towards managing vast data collections, digital repositories, and innovative data analytics methods. The integration of Artificial Intelligence (AI) a…
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Science is and always has been based on data, but the terms "data-centric" and the "4th paradigm of" materials research indicate a radical change in how information is retrieved, handled and research is performed. It signifies a transformative shift towards managing vast data collections, digital repositories, and innovative data analytics methods. The integration of Artificial Intelligence (AI) and its subset Machine Learning (ML), has become pivotal in addressing all these challenges. This Roadmap on Data-Centric Materials Science explores fundamental concepts and methodologies, illustrating diverse applications in electronic-structure theory, soft matter theory, microstructure research, and experimental techniques like photoemission, atom probe tomography, and electron microscopy. While the roadmap delves into specific areas within the broad interdisciplinary field of materials science, the provided examples elucidate key concepts applicable to a wider range of topics. The discussed instances offer insights into addressing the multifaceted challenges encountered in contemporary materials research.
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Submitted 1 May, 2024; v1 submitted 1 February, 2024;
originally announced February 2024.
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Triggered telecom C-band single-photon source with high brightness, high indistinguishability and sub-GHz spectral linewidth
Authors:
Raphael Joos,
Stephanie Bauer,
Christian Rupp,
Sascha Kolatschek,
Wolfgang Fischer,
Cornelius Nawrath,
Ponraj Vijayan,
Robert Sittig,
Michael Jetter,
Simone L. Portalupi,
Peter Michler
Abstract:
Long-range, terrestrial quantum networks will require high brightness single-photon sources emitting in the telecom C-band for maximum transmission rate. Many applications additionally demand triggered operation with high indistinguishability and narrow spectral linewidth. This would enable the efficient implementation of photonic gate operations and photon storage in quantum memories, as for inst…
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Long-range, terrestrial quantum networks will require high brightness single-photon sources emitting in the telecom C-band for maximum transmission rate. Many applications additionally demand triggered operation with high indistinguishability and narrow spectral linewidth. This would enable the efficient implementation of photonic gate operations and photon storage in quantum memories, as for instance required for a quantum repeater. Especially, semiconductor quantum dots (QDs) have shown these properties in the near-infrared regime. However, the simultaneous demonstration of all these properties in the telecom C-band has been elusive. Here, we present a coherently (incoherently) optically-pumped narrow-band (0.8 GHz) triggered single-photon source in the telecom C-band. The source shows simultaneously high single-photon purity with $g^{(2)}(0) = 0.026$ ($g^{(2)}(0) = 0.014$), high two-photon interference visibility of 0.508 (0.664) and high application-ready rates of 0.75 MHz (1.45 MHz) of polarized photons. The source is based on a QD coupled to a circular Bragg grating cavity combined with spectral filtering. Coherent (incoherent) operation is performed via the novel SUPER scheme (phonon-assisted excitation).
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Submitted 31 October, 2023;
originally announced October 2023.
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Highly indistinguishable single photons from droplet-etched GaAs quantum dots integrated in single-mode waveguides and beamsplitters
Authors:
Florian Hornung,
Ulrich Pfister,
Stephanie Bauer,
Dee Rocking Cyrlyson's,
Dongze Wang,
Ponraj Vijayan,
Ailton J. Garcia Jr,
Saimon Filipe Covre da Silva,
Michael Jetter,
Simone L. Portalupi,
Armando Rastelli,
Peter Michler
Abstract:
The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performa…
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The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances with visibilities close to one for both individual and remote emitters. Therefore, the realization of these QDs into PICs is highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e. single-mode waveguides (WGs) with integrated GaAs-QDs, which can be coherently controlled, as well as beamsplitters. We study both the statistical distribution of wavelength, linewidth and decay times of the excitonic line of multiple QDs, as well as the quantum optical properties of individual emitters under resonant excitation. Here, we achieve single-photon purities as high as $1-\text{g}^{(2)}(0)=0.929\pm0.009$ as well as two-photon interference visibilities of up to V$_{\text{TPI}}=0.939\pm0.004$ for two consecutively emitted photons.
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Submitted 18 October, 2023;
originally announced October 2023.
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High-rate intercity quantum key distribution with a semiconductor single-photon source
Authors:
Jingzhong Yang,
Zenghui Jiang,
Frederik Benthin,
Joscha Hanel,
Tom Fandrich,
Raphael Joos,
Stephanie Bauer,
Sascha Kolatschek,
Ali Hreibi,
Eddy Patrick Rugeramigabo,
Michael Jetter,
Simone Luca Portalupi,
Michael Zopf,
Peter Michler,
Stefan Kück,
Fei Ding
Abstract:
Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of sin…
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Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 * 10^{-5} with an average quantum bit error ratio of ~ 0.65 % are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications.
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Submitted 2 July, 2024; v1 submitted 30 August, 2023;
originally announced August 2023.
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How charges separate when surfaces are dewetted
Authors:
Aaron D. Ratschow,
Lisa S. Bauer,
Pravash Bista,
Stefan A. L. Weber,
Hans-Jürgen Butt,
Steffen Hardt
Abstract:
Charge separation at moving three-phase contact lines is observed in nature as well as technological processes. Despite the growing number of experimental investigations in recent years, the physical mechanism behind the charging remains obscure. Here we identify the origin of charge separation as the dewetting of the bound surface charge within the electric double layer by the receding contact li…
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Charge separation at moving three-phase contact lines is observed in nature as well as technological processes. Despite the growing number of experimental investigations in recent years, the physical mechanism behind the charging remains obscure. Here we identify the origin of charge separation as the dewetting of the bound surface charge within the electric double layer by the receding contact line. This charge depends strongly on the local electric double layer structure close to the contact line, which is affected by the gas-liquid interface and the internal flow of the liquid. We summarize the charge separation mechanism in an analytical model that captures parametric dependencies in agreement with our experiments and numerical simulations. Charge separation increases with increasing contact angle and decreases with increasing dewetting velocity. Our findings reveal the universal mechanism of charge separation at receding contact lines, relevant to many dynamic wetting scenarios, and provide a theoretical foundation for both fundamental questions, like contact angle hysteresis, and practical applications.
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Submitted 3 May, 2023;
originally announced May 2023.
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Good practice guide on the graphene-based AC-QHE realization of the farad
Authors:
Luca Callegaro,
Stephan Bauer,
Blaise Jeanneret,
Mattias Kruskopf,
Martina Marzano,
Massimo Ortolano,
Frederic Overney
Abstract:
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The gu…
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This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The guide is a deliverable of the Joint Research Project EMPIR 18SIB07 GIQS: Graphene Impedance Quantum Standard. This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132 , Grant no: 18SIB07.
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Submitted 10 May, 2022;
originally announced May 2022.
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Machine learning-enabled high-entropy alloy discovery
Authors:
Ziyuan Rao,
PoYen Tung,
Ruiwen Xie,
Ye Wei,
Hongbin Zhang,
Alberto Ferrari,
T. P. C. Klaver,
Fritz Körmann,
Prithiv Thoudden Sukumar,
Alisson Kwiatkowski da Silva,
Yao Chen,
Zhiming Li,
Dirk Ponge,
Jörg Neugebauer,
Oliver Gutfleisch,
Stefan Bauer,
Dierk Raabe
Abstract:
High-entropy alloys are solid solutions of multiple principal elements, capable of reaching composition and feature regimes inaccessible for dilute materials. Discovering those with valuable properties, however, relies on serendipity, as thermodynamic alloy design rules alone often fail in high-dimensional composition spaces. Here, we propose an active-learning strategy to accelerate the design of…
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High-entropy alloys are solid solutions of multiple principal elements, capable of reaching composition and feature regimes inaccessible for dilute materials. Discovering those with valuable properties, however, relies on serendipity, as thermodynamic alloy design rules alone often fail in high-dimensional composition spaces. Here, we propose an active-learning strategy to accelerate the design of novel high-entropy Invar alloys in a practically infinite compositional space, based on very sparse data. Our approach works as a closed-loop, integrating machine learning with density-functional theory, thermodynamic calculations, and experiments. After processing and characterizing 17 new alloys (out of millions of possible compositions), we identified 2 high-entropy Invar alloys with extremely low thermal expansion coefficients around 2*10-6 K-1 at 300 K. Our study thus opens a new pathway for the fast and automated discovery of high-entropy alloys with optimal thermal, magnetic and electrical properties.
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Submitted 28 February, 2022;
originally announced February 2022.
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On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers
Authors:
V. Mikhelashvili,
S. Bauer,
I. Khanonkin,
O. Eyal,
G. Seri,
L. Gal,
J. P. Reithmaier,
G. Eisenstein
Abstract:
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three…
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We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three exponential regimes in the I - V characteristics were identified for low bias levels where no optical radiation takes place. At the lowest bias levels, the diffusion-recombination mechanism based on the classical Shockley-Reid-Hall theory dominates. This is followed, at low and near room temperature, by a combination of weak tunneling and generation-recombination, respectively. In the third exponential region, for all temperatures carrier transport is dictated by strong tunneling, which is characterized by a temperature-independent slope of the I - V curves and a variable ideality factor. The I - V results were compared to a conventional QD laser in which the current flow mechanisms of the first and third types are absent, which clearly demonstrates the key role played by the TI layer.
In the post-exponential voltage range, when the diodes are in the high injection regime, the characteristics of the two types of diodes are identical. The typical behavior at the threshold current, where the output power increases fast has a clear signature in the I - V characteristics. Finally, an analytical quantitative relationship is established between the light output power and the applied voltage and current as well as the carrier density participating in radiative recombination.
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Submitted 14 August, 2021;
originally announced August 2021.
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Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform
Authors:
Robert Sittig,
Cornelius Nawrath,
Sascha Kolatschek,
Stephanie Bauer,
Richard Schaber,
Jiasheng Huang,
Ponraj Vijayan,
Simone Luca Portalupi,
Michael Jetter,
Peter Michler
Abstract:
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their…
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The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies.
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Submitted 2 August, 2021; v1 submitted 28 July, 2021;
originally announced July 2021.
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Convolutional neural network-assisted recognition of nanoscale L12 ordered structures in face-centred cubic alloys
Authors:
Yue Li,
Xuyang Zhou,
Timoteo Colnaghi,
Ye Wei,
Andreas Marek,
Hongxiang Li,
Stefan Bauer,
Markus Rampp,
Leigh Stephenson
Abstract:
Nanoscale L12-type ordered structures are widely used in face-centred cubic (FCC) alloys to exploit their hardening capacity and thereby improve mechanical properties. These fine-scale particles are typically fully coherent with matrix with the same atomic configuration disregarding chemical species, which makes them challenging to be characterized. Spatial distribution maps (SDMs) are used to pro…
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Nanoscale L12-type ordered structures are widely used in face-centred cubic (FCC) alloys to exploit their hardening capacity and thereby improve mechanical properties. These fine-scale particles are typically fully coherent with matrix with the same atomic configuration disregarding chemical species, which makes them challenging to be characterized. Spatial distribution maps (SDMs) are used to probe local order by interrogating the three-dimensional (3D) distribution of atoms within reconstructed atom probe tomography (APT) data. However, it is almost impossible to manually analyse the complete point cloud ($>10$ million) in search for the partial crystallographic information retained within the data. Here, we proposed an intelligent L12-ordered structure recognition method based on convolutional neural networks (CNNs). The SDMs of a simulated L12-ordered structure and the FCC matrix were firstly generated. These simulated images combined with a small amount of experimental data were used to train a CNN-based L12-ordered structure recognition model. Finally, the approach was successfully applied to reveal the 3D distribution of L12-type $δ^\prime$-Al3(LiMg) nanoparticles with an average radius of 2.54 nm in a FCC Al-Li-Mg system. The minimum radius of detectable nanodomain is even down to 5 Å. The proposed CNN-APT method is promising to be extended to recognize other nanoscale ordered structures and even more-challenging short-range ordered phenomena in the near future.
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Submitted 16 February, 2021;
originally announced February 2021.
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A machine learning route between band mapping and band structure
Authors:
Rui Patrick Xian,
Vincent Stimper,
Marios Zacharias,
Maciej Dendzik,
Shuo Dong,
Samuel Beaulieu,
Bernhard Schölkopf,
Martin Wolf,
Laurenz Rettig,
Christian Carbogno,
Stefan Bauer,
Ralph Ernstorfer
Abstract:
Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods.…
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Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods. To cope with the growing size and scale of photoemission data, we develop a pipeline including probabilistic machine learning and the associated data processing, optimization and evaluation methods for band structure reconstruction, leveraging theoretical calculations. The pipeline reconstructs all 14 valence bands of a semiconductor and shows excellent performance on benchmarks and other materials datasets. The reconstruction uncovers previously inaccessible momentum-space structural information on both global and local scales, while realizing a path towards integration with materials science databases. Our approach illustrates the potential of combining machine learning and domain knowledge for scalable feature extraction in multidimensional data.
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Submitted 15 November, 2022; v1 submitted 20 May, 2020;
originally announced May 2020.
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Confining Metal-Halide Perovskites in Nanoporous Thin Films
Authors:
Stepan Demchyshyn,
Janina Melanie Roemer,
Heiko Groiß,
Herwig Heilbrunner,
Christoph Ulbricht,
Dogukan Apaydin,
Uta Rütt,
Florian Bertram,
Günter Hesser,
Markus Scharber,
Bert Nickel,
Niyazi Serdar Sariciftci,
Siegfried Bauer,
Eric Daniel Głowacki,
Martin Kaltenbrunner
Abstract:
Controlling size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum confined, inexpensive, solution derived metal halide perovskites offer narrow band, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporous silicon and alumina thin films as templates for the growth of perovskite nanocrystallites directly…
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Controlling size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum confined, inexpensive, solution derived metal halide perovskites offer narrow band, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporous silicon and alumina thin films as templates for the growth of perovskite nanocrystallites directly within device-relevant architectures without the use of colloidal stabilization. We find significantly blue shifted photoluminescence emission by reducing the pore size; normally infrared-emitting materials become visibly red, green-emitting materials cyan and blue. Confining perovskite nanocrystals within porous oxide thin films drastically increases photoluminescence stability as the templates auspiciously serve as encapsulation. We quantify the template-induced size of the perovskite crystals in nanoporous silicon with microfocus high-energy X-ray depth profiling in transmission geometry, verifying the growth of perovskite nanocrystals throughout the entire thickness of the nanoporous films. Low-voltage electroluminescent diodes with narrow, blue-shifted emission fabricated from nanocrystalline perovskites grown in embedded nanoporous alumina thin films substantiate our general concept for next generation photonic devices.
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Submitted 18 August, 2017; v1 submitted 13 May, 2016;
originally announced July 2016.
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Strong spin-orbit fields and Dyakonov-Perel spin dephasing in supported metallic films
Authors:
Nguyen H. Long,
Phivos Mavropoulos,
David S. G. Bauer,
Bernd Zimmermann,
Yuriy Mokrousov,
Stefan Blügel
Abstract:
Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The surface-to-substrate asymmetry, probed by the metal wave functions in thin films, is found to produce strong spin-orbit fields and a fast Larmor precession, giving a dominant co…
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Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The surface-to-substrate asymmetry, probed by the metal wave functions in thin films, is found to produce strong spin-orbit fields and a fast Larmor precession, giving a dominant contribution to spin decay over the Elliott-Yafet spin relaxation up to a thickness of 70 nm. The spin dephasing is oscillatory in time with a rapid (sub-picosecond) initial decay. However, parts of the Fermi surface act as spin traps, causing a persistent tail signal lasting 1000 times longer than the initial decay time. It is also found that the decay depends on the direction of the initial spin polarization, resulting in a spin-dephasing anisotropy of 200% in the examined cases.
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Submitted 6 April, 2016;
originally announced April 2016.
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Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators
Authors:
H. Plank,
L. E. Golub,
S. Bauer,
V. V. Bel'kov,
T. Herrmann,
P. Olbrich,
M. Eschbach,
L. Plucinski,
J. Kampmeier,
M. Lanius,
G. Mussler,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a c…
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We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.
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Submitted 22 December, 2015;
originally announced December 2015.
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Spin relaxation and spin Hall transport in 5d transition-metal ultrathin films
Authors:
Nguyen H. Long,
Phivos Mavropoulos,
Bernd Zimmermann,
David S. G. Bauer,
Stefan Blügel,
Yuriy Mokrousov
Abstract:
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of the Elliott-Yafet parameter and of the spin-flip relaxation rate reveal a correlation with each other that is in agreement with the Elliott approximation. At 10…
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The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of the Elliott-Yafet parameter and of the spin-flip relaxation rate reveal a correlation with each other that is in agreement with the Elliott approximation. At 10-layer thickness, the spin-flip relaxation time in 5d transition-metal films is quantitatively reported about few hundred nanoseconds at atomic percent which is one and two orders of magnitude shorter than that in Au and Cu thin films, respectively. The anisotropy effect of the Elliott-Yafet parameter and of the spin-flip relaxation rate with respect to the direction of the spin-quantization axis in relation to the crystallographic axes is also analyzed. We find that the anisotropy of the spin-flip relaxation rate is enhanced due to the Rashba surface states on the Fermi surface, reaching values as high as 97% in 10-layer Hf(0001) film or 71% in 10-layer W(110) film. Finally, the spin Hall conductivity as well as the spin Hall angle due to the skew-scattering off self-adatom impurities are calculated using the Boltzmann approach. Our calculations employ a relativistic version of the first-principles full-potential Korringa-Kohn-Rostoker Green function method.
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Submitted 12 May, 2014;
originally announced May 2014.
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Zinc Oxide - From Dilute Magnetic Doping to Spin Transport
Authors:
Matthias Opel,
Sebastian T. B. Goennenwein,
Matthias Althammer,
Karl-Wilhelm Nielsen,
Eva-Maria Karrer-Müller,
Sebastian Bauer,
Konrad Senn,
Christoph Schwark,
Christian Weier,
Gernot Güntherodt,
Bernd Beschoten,
Rudolf Gross
Abstract:
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itine…
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During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itinerant ferromagnetism. Phase-pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer-sized metallic precipitates. Other compounds like ZnO:(Li,Ni) and ZnO:Cu do not exhibit indication of ferromagnetism.
Second, its small spin-orbit coupling and correspondingly large spin coherence length makes ZnO suitable for transporting or manipulating spins in spintronic devices. From optical pump/optical probe experiments, we find a spin dephasing time of the order of 15 ns at low temperatures which we attribute to electrons bound to Al donors. In all-electrical magnetotransport measurements, we successfully create and detect a spin-polarized ensemble of electrons and transport this spin information across several nanometers. We derive a spin lifetime of 2.6 ns for these itinerant spins at low temperatures, corresponding well to results from an electrical pump/optical probe experiment.
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Submitted 23 September, 2013;
originally announced September 2013.
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Spin relaxation and the Elliott-Yafet parameter in W(001) ultrathin films: surface states, anisotropy and oscillation effects
Authors:
Nguyen H. Long,
Phivos Mavropoulos,
Bernd Zimmermann,
Swantje Heers,
David S. G. Bauer,
Stefan Blügel,
Yuriy Mokrousov
Abstract:
Using first-principles methods based on density-functional theory we investigate the spin relaxation in W(001) ultrathin films. Within the framework of the Elliott-Yafet theory we calculate the spin mixing of the Bloch states and we explicitly consider spin-flip scattering off self-adatoms. We find an oscillatory behavior of the spin-mixing parameter and relaxation rate as a function of the film t…
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Using first-principles methods based on density-functional theory we investigate the spin relaxation in W(001) ultrathin films. Within the framework of the Elliott-Yafet theory we calculate the spin mixing of the Bloch states and we explicitly consider spin-flip scattering off self-adatoms. We find an oscillatory behavior of the spin-mixing parameter and relaxation rate as a function of the film thickness, which we trace back tosurface-state properties. We also analyze the Rashba effect experienced by the surface states and discuss its influence on the spin relaxation. Finally we calculate the anisotropy of the spin-relaxation rate with respect to the polarization direction of the excited spin population relative to the crystallographic axes of thefilm. We find that the spin-relaxation rate can increase by as much as 47% when the spin polarization is directed out of plane, compared to the case when it is in plane. Our calculations are based on the multiple-scattering formalism of the Korringa-Kohn-Rostoker Green-function method.
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Submitted 1 February, 2013;
originally announced February 2013.
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Debye relaxation and 250 K anomaly in glass forming monohydroxy alcohols
Authors:
S. Bauer,
K. Burlafinger,
C. Gainaru,
P. Lunkenheimer,
W. Hiller,
A. Loidl,
R. Böhmer
Abstract:
A previous dielectric, near-infrared (NIR), and nuclear magnetic resonance study on the hydrogen-bonded liquid 2-ethyl-1-hexanol [C. Gainaru et al., Phys. Rev. Lett. 107, 118304 (2011)] revealed anomalous behavior in various static quantities near 250 K. To check whether corresponding observations can be made for other monohydroxy alcohols as well, these experimental methods were applied to such s…
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A previous dielectric, near-infrared (NIR), and nuclear magnetic resonance study on the hydrogen-bonded liquid 2-ethyl-1-hexanol [C. Gainaru et al., Phys. Rev. Lett. 107, 118304 (2011)] revealed anomalous behavior in various static quantities near 250 K. To check whether corresponding observations can be made for other monohydroxy alcohols as well, these experimental methods were applied to such substances with 5, 6, 7, 8, and 10 carbon atoms in their molecular backbone. All studied liquids exhibit a change of behavior near 250 K which is tentatively ascribed to effects of hydrogen bond cooperativity. By analyzing the NIR band intensities, a linear cluster size is derived that agrees with estimates from dielectric spectroscopy. All studied alcohols, except 4-methyl-3-heptanol, display a dominant Debye-like peak. Furthermore, neat 2-ethyl-1-butanol exhibits a well resolved structural relaxation in its dielectric loss spectrum which so far has only been observed for diluted monohydroxy alcohols.
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Submitted 21 January, 2013;
originally announced January 2013.
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Thermally activated magnetization reversal in monoatomic magnetic chains on surfaces studied by classical atomistic spin-dynamics simulations
Authors:
David S. G. Bauer,
Phivos Mavropoulos,
Samir Lounis,
Stefan Blügel
Abstract:
We analyze the spontaneous magnetization reversal of supported monoatomic chains of finite length due to thermal fluctuations via atomistic spin-dynamics simulations. Our approach is based on the integration of the Landau-Lifshitz equation of motion of a classical spin Hamiltonian at the presence of stochastic forces. The associated magnetization lifetime is found to obey an Arrhenius law with an…
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We analyze the spontaneous magnetization reversal of supported monoatomic chains of finite length due to thermal fluctuations via atomistic spin-dynamics simulations. Our approach is based on the integration of the Landau-Lifshitz equation of motion of a classical spin Hamiltonian at the presence of stochastic forces. The associated magnetization lifetime is found to obey an Arrhenius law with an activation barrier equal to the domain wall energy in the chain. For chains longer than one domain-wall width, the reversal is initiated by nucleation of a reversed magnetization domain primarily at the chain edge followed by a subsequent propagation of the domain wall to the other edge in a random-walk fashion. This results in a linear dependence of the lifetime on the chain length, if the magnetization correlation length is not exceeded. We studied chains of uniaxial and tri-axial anisotropy and found that a tri-axial anisotropy leads to a reduction of the magnetization lifetime due to a higher reversal attempt rate, even though the activation barrier is not changed.
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Submitted 20 November, 2010; v1 submitted 22 October, 2010;
originally announced October 2010.
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Nanosized superparamagnetic precipitates in cobalt-doped ZnO
Authors:
Matthias Opel,
Karl-Wilhelm Nielsen,
Sebastian Bauer,
Sebastian T. B. Goennenwein,
Rudolf Gross,
Julio C. Cezar,
Dieter Schmeisser,
Juergen Simon,
Werner Mader
Abstract:
The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystall…
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The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystalline ZnO substrates the magnetism unambiguously stems from metallic cobalt nano-inclusions. The magnetic behavior was investigated by SQUID magnetometry, x-ray magnetic circular dichroism, and AC susceptibility measurements. The results were correlated to a detailed microstructural analysis based on high resolution x-ray diffraction, transmission electron microscopy, and electron-spectroscopic imaging. No evidence for carrier mediated ferromagnetic exchange between diluted cobalt moments was found. In contrast, the combined data provide clear evidence that the observed room temperature ferromagnetic-like behavior originates from nanometer sized superparamagnetic metallic cobalt precipitates.
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Submitted 19 May, 2008; v1 submitted 26 March, 2008;
originally announced March 2008.