Showing 1–2 of 2 results for author: Batmanova, D K

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

Authors: Gennady I. Zebrev, Alexander A. Tselykovskiy, Daria K. Batmanova, Evgeny V. Melnik

Abstract: The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance c… ▽ More The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled taking into account the two modes of drain current saturation including drift velocity saturation or electrostatic pinch-off. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. The model allows describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain and cut-off frequency. △ Less

Submitted 16 December, 2011; originally announced December 2011.

Comments: 14 pages, 10 figures, 22 references

Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

Authors: Gennady I. Zebrev, Evgeny V. Melnik, Daria K. Batmanova

Abstract: Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed. Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed. △ Less

Submitted 2 February, 2012; v1 submitted 24 October, 2011; originally announced October 2011.

Comments: 4 pages, 7 figures, a report to MIEL 2012