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Electronic structure property relationship in glassy Ti-Zr-Nb-(Cu,Ni,Co)
Authors:
Marko Kuveždić,
Emil Tafra,
Emil Babić,
Ramir Ristić,
Krešo Zadro,
Damir Starešinić,
Ignacio A. Figueroa,
Mario Basletić
Abstract:
In this work we revisit vast amount of existing data on physical properties of Ti-Zr-Nb-(Cu,Ni,Co) glassy alloys over a broad range of concentrations (from the high entropy range to that of conventional Cu-, Ni- or Co-rich alloys). By using our new approach based on total content of late transition metal(s), we derive a number of physical parameters of a hypothetical amorphous TiZrNb alloy: lattic…
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In this work we revisit vast amount of existing data on physical properties of Ti-Zr-Nb-(Cu,Ni,Co) glassy alloys over a broad range of concentrations (from the high entropy range to that of conventional Cu-, Ni- or Co-rich alloys). By using our new approach based on total content of late transition metal(s), we derive a number of physical parameters of a hypothetical amorphous TiZrNb alloy: lattice parameter $a = (3.42 \pm 0.02)$Å, Sommerfeld coefficient $γ= 6.2\,$mJ/mol$\,$K$^2$, density of states at $N(E_F) = 2.6\,(\text{at eV})^{-1}$, magnetic susceptibility $(2.00 \pm 0.05)\,$mJ/T$^2\,$mol, superconducting transition temperature $T_c = (8 \pm 1)\,$K, upper critical field $μ_0 H_{c2}(0) = (20 \pm 5)\,$T, and coherence length $ξ(0) = (40 \pm 3)\,$Å. We show that our extrapolated results for amorphous TiZrNb alloy would be similar to that of crystalline TiZrNb, except for superconducting properties (most notably the upper critical field $H_{c2}(0)$), which might be attributed to the strong topological disorder of the amorphous phase. Also, we offer an explanation of the discrepancy between the variations of $T_c$ with the average number of valency electrons in neighboring alloys of 4d transition metals and some high entropy alloys. Overall, we find that our novel method of systematic analysis of results is rather general, as it can provide reliable estimates of the properties of any alloy which has not been prepared as yet.
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Submitted 5 February, 2025;
originally announced February 2025.
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Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys
Authors:
Marko Kuveždić,
Emil Tafra,
Mario Basletić,
Ramir Ristić,
Petar Pervan,
Vesna Mikšić Trontl,
Ignacio A Figueroa,
Emil Babić
Abstract:
We present results of comprehensive study of electronic properties of (TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x encompassing both, high entropy (HE) range, and conventional Ni-base alloy concentration range, x >= 0.35. The electronic structure studied by photoemission spectroscopy and low temperature specific heat (LTSH) reveal a split-band structure of density o…
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We present results of comprehensive study of electronic properties of (TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x encompassing both, high entropy (HE) range, and conventional Ni-base alloy concentration range, x >= 0.35. The electronic structure studied by photoemission spectroscopy and low temperature specific heat (LTSH) reveal a split-band structure of density of states inside valence band with d-electrons of Ti, Zr, Nb and also Ni present at Fermi level N(E_F), whereas LTSH and magnetoresistivity results show that variation of N(E_F) with x changes in Ni-base regime. The variation of superconducting transition temperatures with x closely follows that of N(E_F). The electrical resistivities of all alloys are high and decrease with increasing temperature over most of explored temperature range, and their temperature dependence seems dominated by weak localization effects over a broad temperature range (10-300 K). The preliminary study of Hall effect shows positive Hall coefficient that decreases rapidly in Ni-base alloys.
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Submitted 23 December, 2019;
originally announced December 2019.
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Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence
Authors:
M. Čulo,
M. Basletić,
E. Tafra,
A. Hamzić,
S. Tomić,
F. Fischgrabe,
V. Moshnyaga,
B. Korin-Hamzić
Abstract:
We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an antiferromagnetic (AF) phase are present. Resistivity, magnetoresistance and angular dependence of magnetoresistance were measured in the temperature interval…
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We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an antiferromagnetic (AF) phase are present. Resistivity, magnetoresistance and angular dependence of magnetoresistance were measured in the temperature interval $4.2 ~\mathrm{K} < T < 300 ~\mathrm{K}$, for three concentrations $x = 0.52, 0.58$ and $0.75$ and in magnetic fields up to 5 T. The semiconductor/insulator--like behavior in zero field was observed in the entire temperature range for all three concentrations \textit{x} and the electric conduction, at lower temperatures, in the CO state obeys 3D Mott's variable--range hopping model. A huge negative magnetoresistance for $x = 0.52$ and $x = 0.58$, a metal--insulator transition for $B > 3 ~\mathrm{T}$ for $x = 0.52$ and the presence of anisotropy in magnetoresistance for $x = 0.52$ and $x = 0.58$ show the fingerprints of colossal magnetoresistance (CMR) behavior implying the existence of ferromagnetic (FM) clusters. The declining influence of the FM clusters in the CO/AF part of the phase diagram with increasing $x$ contributes to a possible explanation that a phase coexistence is the origin of the CMR phenomenon.
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Submitted 24 April, 2017;
originally announced April 2017.
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Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties
Authors:
Tomislav Ivek,
Matija Čulo,
Marko Kuveždić,
Eduard Tutiš,
Mario Basletić,
Branimir Mihaljević,
Emil Tafra,
Silvia Tomić,
Anja Löhle,
Martin Dressel,
Dieter Schweitzer,
Bojana Korin-Hamzić
Abstract:
$α$-(BEDT-TTF)$_2$I$_3$ is a prominent example of charge ordering among organic conductors. In this work we explore the details of transport within the charge-ordered as well as semimetallic phase at ambient pressure. In the high-temperature semimetallic phase, the mobilities and concentrations of both electrons and holes conspire in such a way to create an almost temperature-independent conductiv…
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$α$-(BEDT-TTF)$_2$I$_3$ is a prominent example of charge ordering among organic conductors. In this work we explore the details of transport within the charge-ordered as well as semimetallic phase at ambient pressure. In the high-temperature semimetallic phase, the mobilities and concentrations of both electrons and holes conspire in such a way to create an almost temperature-independent conductivity as well as a low Hall effect. We explain these phenomena as a consequence of a predominantly inter-pocket scattering which equalizes mobilities of the two types of charge carriers. At low temperatures, within the insulating charge-ordered phase two channels of conduction can be discerned: a temperature-dependent activation which follows the mean-field behavior, and a nearest-neighbor hopping contribution. Together with negative magnetoresistance, the latter relies on the presence of disorder. The charge-ordered phase also features a prominent dielectric peak which bears a similarity to relaxor ferroelectrics. Its dispersion is determined by free-electron screening and pushed by disorder well below the transition temperature. The source of this disorder can be found in the anion layers which randomly perturb BEDT-TTF molecules through hydrogen bonds.
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Submitted 11 July, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Anions effects on the electronic structure and electrodynamic properties of the Mott insulator $κ$-(BEDT-TTF)$_2$Ag$_2$(CN)$_{3}$
Authors:
M. Pinterić,
P. Lazić,
A. Pustogow,
T. Ivek,
M. Kuveždić,
O. Milat,
B. Gumhalter,
M. Basletić,
M. Čulo,
B. Korin-Hamzić,
A. Löhle,
R. Hübner,
M. Sanz Alonso,
T. Hiramatsu,
Y. Yoshida,
G. Saito,
M. Dressel,
S. Tomić
Abstract:
The Mott insulator $κ$-(BEDT-TTF)$_2$Ag$_2$(CN)$_3$ forms a highly-frustrated triangular lattice of $S=1/2$ dimers with a possible quantum-spin-liquid state. Our experimental and numerical studies reveal the emergence of a slight charge imbalance between crystallographically inequivalent sites, relaxor dielectric response and hopping dc transport. In a broader perspective we conclude that the univ…
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The Mott insulator $κ$-(BEDT-TTF)$_2$Ag$_2$(CN)$_3$ forms a highly-frustrated triangular lattice of $S=1/2$ dimers with a possible quantum-spin-liquid state. Our experimental and numerical studies reveal the emergence of a slight charge imbalance between crystallographically inequivalent sites, relaxor dielectric response and hopping dc transport. In a broader perspective we conclude that the universal properties of strongly-correlated charge-transfer salts with spin liquid state are an anion-supported valence band and cyanide-induced quasi-degenerate electronic configurations in the relaxed state. The generic low-energy excitations are caused by charged domain walls rather than by fluctuating electric dipoles. They give rise to glassy dynamics characteristic of dimerized Mott insulators, including the sibling compound $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$.
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Submitted 26 July, 2016;
originally announced July 2016.
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Anisotropic charge dynamics in the quantum spin-liquid candidate $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$
Authors:
M. Pinteric,
M. Culo,
O. Milat,
M. Basletic,
B. Korin-Hamzic,
E. Tafra,
A. Hamzic,
T. Ivek,
T. Peterseim,
K. Miyagawa,
K. Kanoda,
J. A. Schlueter,
M. Dressel,
S. Tomic
Abstract:
We have in detail characterized the anisotropic charge response of the dimer Mott insulator $κ$-(BEDT-TTF)$_2$\-Cu$_2$(CN)$_3$ by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity $ρ(T)$. Within the planes the dc conductivity is well d…
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We have in detail characterized the anisotropic charge response of the dimer Mott insulator $κ$-(BEDT-TTF)$_2$\-Cu$_2$(CN)$_3$ by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity $ρ(T)$. Within the planes the dc conductivity is well described by variable-range hopping in two dimensions; this model, however, fails for the out-of-plane direction. An unusually broad in-plane dielectric relaxation is detected below about 60 K; it slows down much faster than the dc conductivity following an Arrhenius law. At around 17 K we can identify a pronounced dielectric anomaly concomitantly with anomalous features in the mean relaxation time and spectral broadening. The out-of-plane relaxation, on the other hand, shows a much weaker dielectric anomaly; it closely follows the temperature behavior of the respective dc resistivity. At lower temperatures, the dielectric constant becomes smaller both within and perpendicular to the planes; also the relaxation levels off. The observed behavior bears features of relaxor-like ferroelectricity. Because heterogeneities impede its long-range development, only a weak tunneling-like dynamics persists at low temperatures. We suggest that the random potential and domain structure gradually emerge due to the coupling to the anion network.
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Submitted 10 October, 2014; v1 submitted 22 July, 2014;
originally announced July 2014.
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Role of microscopic phase separation in gelation of aqueous gelatin solutions
Authors:
Damjan Pelc,
Sanjin Marion,
Miroslav Požek,
Mario Basletić
Abstract:
Using a unique home-made cell for four-contact impedance spectroscopy of conductive liquid samples, we establish the existence of two low frequency conductivity relaxations in aqueous solutions of gelatin, in both liquid and gel state. A comparison with diffusion measurements using pulsed field gradient NMR shows that the faster relaxation process is due to gelatin macromolecule self-diffusion. Th…
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Using a unique home-made cell for four-contact impedance spectroscopy of conductive liquid samples, we establish the existence of two low frequency conductivity relaxations in aqueous solutions of gelatin, in both liquid and gel state. A comparison with diffusion measurements using pulsed field gradient NMR shows that the faster relaxation process is due to gelatin macromolecule self-diffusion. This single molecule diffusion is mostly insensitive to the macroscopic state of the sample, implying that the gelation of gelatin is not a percolative phenomenon, but is caused by aggregation of triple helices into a system-spanning fibre network.
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Submitted 20 July, 2012;
originally announced July 2012.
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Four-contact impedance spectroscopy of conductive liquid samples
Authors:
Damjan Pelc,
Sanjin Marion,
Mario Basletic
Abstract:
We present an improved approach to the impedance spectroscopy of conductive liquid samples using four-electrode measurements. Our method enables impedance measurements of conductive liquids down to the sub-Hertz frequencies, avoiding the electrode polarization effects that usually cripple standard impedance analysers. We have successfully tested our apparatus with aqueous solutions of potassium ch…
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We present an improved approach to the impedance spectroscopy of conductive liquid samples using four-electrode measurements. Our method enables impedance measurements of conductive liquids down to the sub-Hertz frequencies, avoiding the electrode polarization effects that usually cripple standard impedance analysers. We have successfully tested our apparatus with aqueous solutions of potassium chloride and gelatin. The first substance has shown flat spectra from $\sim$100 kHz down to sub-Hz range, while the results on gelatin clearly show the existence of two distinct low frequency conductive relaxations.
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Submitted 29 April, 2011;
originally announced April 2011.
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Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper
Authors:
Y. Niimi,
M. Morota,
D. H. Wei,
C. Deranlot,
M. Basletic,
A. Hamzic,
A. Fert,
Y. Otani
Abstract:
We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 1…
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We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.
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Submitted 22 March, 2011; v1 submitted 20 February, 2011;
originally announced February 2011.
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The Hall effect in the organic conductor TTF-TCNQ: Choice of geometry for accurate measurements of highly anisotropic system
Authors:
Emil Tafra,
Matija Čulo,
Mario Basletić,
Bojana Korin-Hamzić,
Amir Hamzić,
C. S. Jacobsen
Abstract:
We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through…
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We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through the crystal. By applying the equivalent isotropic sample (EIS) approach, we have demonstrated the importance of the choice of optimal geometry for accurate Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is around zero in high temperature region (T > 150 K), implying that there is no dominance of either TTF or TCNQ chain. At lower temperatures, our measurements clearly prove that all three phase transitions of TTF-TCNQ could be identified from Hall effect measurements.
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Submitted 24 January, 2012; v1 submitted 25 January, 2011;
originally announced January 2011.
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Influence of doping on the Hall coefficient in Sr_{14-x}Ca_xCu_24O_41
Authors:
E. Tafra,
B. Korin-Hamzic,
M. Basletic,
A. Hamzic,
M. Dressel,
J. Akimitsu
Abstract:
We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical se…
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We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical semiconducting behavior for x < 11.5. However, for x=11.5, the results are completely different, and the Hall coefficient and resistivity behavior is qualitatively similar to that of high temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is responsible for a pronounced change in resistivity with Ca doping.
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Submitted 23 October, 2008; v1 submitted 16 July, 2008;
originally announced July 2008.
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Enhanced superconductivity in Hf-base metallic glasses
Authors:
Emil Tafra,
Mario Basletic,
Ramir Ristic,
Emil Babic,
Amir Hamzic
Abstract:
Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B <= 5 T. All Hf-base alloys are superconducting with T_c >= 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_…
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Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B <= 5 T. All Hf-base alloys are superconducting with T_c >= 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_{c2}/dT)_{T_c}, and resistivities we determined the dressed electronic densities of states, N_γ(E_F), for all alloys. Both T_c and N_γ(E_F) decrease with increasing x (Fe and Cu content). The results are compared with those for corresponding Zr-base metallic glasses and ion-implanted Hf films.
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Submitted 26 September, 2008; v1 submitted 3 June, 2008;
originally announced June 2008.
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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions
Authors:
Jean-Luc Maurice,
Gervasi Herranz,
Christian Colliex,
Isabelle Devos,
Cécile Carrétéro,
Agnès Barthelemy,
Karim Bouzehouane,
Stéphane Fusil,
Dominique Imhoff,
Éric Jacquet,
François Jomard,
Dominique Ballutaud,
Mario Basletic
Abstract:
At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope,…
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At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.
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Submitted 3 December, 2007;
originally announced December 2007.
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Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures
Authors:
M. Basletic,
J. -L. Maurice,
C. Carretero,
G. Herranz,
O. Copie,
M. Bibes,
E. Jacquet,
K. Bouzehouane,
S. Fusil,
A. Barthelemy
Abstract:
At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of…
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At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.
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Submitted 31 March, 2008; v1 submitted 6 October, 2007;
originally announced October 2007.
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Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn
Authors:
M. Pozek,
I. Kupcic,
A. Dulcic,
A. Hamzic,
D. Paar,
M. Basletic,
E. Tafra,
G. V. M. Williams
Abstract:
Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of…
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Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of the upper critical field B_c2, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in CuO2 layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in CuO2 layers, which represent the main conductivity channel. Most of the electrons in RuO2 layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in RuO$_2$ layers that exhibit colossal magnetoresistance.
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Submitted 19 July, 2007;
originally announced July 2007.
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High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
A. Hamzic,
J. -M. Broto,
A. Barthelemy,
A. Fert
Abstract:
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experi…
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We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.
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Submitted 19 April, 2007;
originally announced April 2007.
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Hidden symmetries in Bechgaard salt (TMTSF)2NO3
Authors:
Kazumi Maki,
Mario Basletic,
Bojana Korin-Hamzic,
Silvia Tomic
Abstract:
Among known Bechgaard and Fabre salts (TMTSF)2NO3 is unique since it never becomes superconducting even under pressure. Also, though (TMTSF)2NO3 undergoes the spin density wave (SDW) transition, the low temperature transport is semimetallic and gapless. We propose: a) the absence of the superconductivity is due to the inverse symmetry breaking associated with the anion ordering at 45K; b) the SD…
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Among known Bechgaard and Fabre salts (TMTSF)2NO3 is unique since it never becomes superconducting even under pressure. Also, though (TMTSF)2NO3 undergoes the spin density wave (SDW) transition, the low temperature transport is semimetallic and gapless. We propose: a) the absence of the superconductivity is due to the inverse symmetry breaking associated with the anion ordering at 45K; b) the SDW state below 9K should be unconventional as seen from the angle dependent magnetoresistance oscillation (AMRO); c) a new phase diagram for Bechgaard salts, where unconventional spin density wave (USDW) occupies the prominent space.
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Submitted 5 February, 2007;
originally announced February 2007.
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Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium
Authors:
M. Pozek,
A. Dulcic,
A. Hamzic,
M. Basletic,
E. Tafra,
G. V. M. Williams,
S. Kraemer
Abstract:
Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron doping by La reduces the hole concentration in the CuO2 planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data…
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Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron doping by La reduces the hole concentration in the CuO2 planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data indicate that the carrier concentration is reduced and a semiconductor-like temperature dependence is observed. Two magnetic ordering transitions are observed. The ruthenium sublattice orders antiferromagnetically at 155 K for low applied magnetic field and the gadolinium sublattice antiferromagnetically orders at 2.8 K. The magnetoresistivity exhibits a complicated temperature dependence due to the combination of the two magnetic orderings and spin fluctuations. It is shown that the ruthenium magnetism influences the conductivity in the RuO2 layers while the gadolinium magnetism influences the conductivity in the CuO2 layers. The magnetoresistivity is isotropic above 4 K, but it becomes anisotropic when gadolinium orders antiferromagnetically.
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Submitted 20 December, 2006;
originally announced December 2006.
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Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3
Authors:
Mario Basletic,
Bojana Korin-Hamzic,
Kazumi Maki,
Silvija Tomic
Abstract:
Among many Bechgaard salts, TMTSF2NO3 exhibits very anomalous low temperature properties. Unlike conventional spin density wave (SDW), TMTSF2NO3 undergoes the SDW transition at $\T_SDW\approx 9.5$ K and the low temperature quasiparticle excitations are gapless. Also, it is known that TMTSF2NO3 does not exhibit superconductivity even under pressure, while FISDW is found in TMTSF2NO3 only for P=8.…
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Among many Bechgaard salts, TMTSF2NO3 exhibits very anomalous low temperature properties. Unlike conventional spin density wave (SDW), TMTSF2NO3 undergoes the SDW transition at $\T_SDW\approx 9.5$ K and the low temperature quasiparticle excitations are gapless. Also, it is known that TMTSF2NO3 does not exhibit superconductivity even under pressure, while FISDW is found in TMTSF2NO3 only for P=8.5 kbar and B>20 T. Here we shall show that both the angle dependent magnetoresistance data and the nonlinear Hall resistance of TMTSF2NO3 at ambient pressure are interpreted satisfactory in terms of unconventional spin density wave (USDW). Based on these facts, we propose a new phase diagram for Bechgaards salts.
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Submitted 11 January, 2007; v1 submitted 3 October, 2006;
originally announced October 2006.
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Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
J. -L. Maurice,
A. Hamzic,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigat…
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LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.
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Submitted 7 June, 2006;
originally announced June 2006.
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Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
R. Ranchal,
A. Hamzic,
E. Tafra,
K. Bouzehouane,
E. Jacquet,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransp…
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We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length.
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Submitted 21 December, 2005;
originally announced December 2005.
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Conduction anisotropy and Hall effect in the organic conductor (TMTTF)2AsF6: evidence for Luttinger liquid and charge ordering
Authors:
Bojana Korin-Hamzic,
Emil Tafra,
Mario Basletic,
Amir Hamzic,
Martin Dressel
Abstract:
We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly different for the three different directions, with metallic-like at high temperatures for the a-axis only. Above 220 K the Hall coefficient R_H is constant, positive…
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We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly different for the three different directions, with metallic-like at high temperatures for the a-axis only. Above 220 K the Hall coefficient R_H is constant, positive and strongly enhanced over the expected value; and the corresponding carrier concentration is almost 100 times lower than calculated for one hole/unit cell. Our results give evidence for the existence of a high-temperature regime above 200 K where the 1D Luttinger liquid features appear in the transport properties. Our measurements also give strong evidence of charge ordering in (TMTTF)2AsF6. At the charge-ordering transition T_{CO} \approx 100 K, R_H(T) abruptly changes its behavior, switches sign and rapidly increases with further temperature decrease.
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Submitted 6 September, 2005;
originally announced September 2005.
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Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization
Authors:
G. Herranz,
R. Ranchal,
M. Bibes,
H. Jaffres,
E. Jacquet,
J. L. Maurice,
K. Bouzehouane,
F. Wyczisk,
E. Tafra,
M. Basletic,
A. Hamzic,
C. Colliex,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO com…
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We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.
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Submitted 11 August, 2005;
originally announced August 2005.
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Hall resistivity in unconventional spin density wave in (TMTSF)2PF6 below T=4.2K
Authors:
M. Basletic,
B. Korin-Hamzic,
A. Hamzic,
K. Maki
Abstract:
It is well documented that SDW in (TMTSF)2PF6 undergoes another phase transition at T*\approx 4K, though the nature of the new low temperature phase is controversial. We have shown recently that the new phase is well described in terms of unconventional SDW (USDW) which modifies the quasiparticle spectrum dramatically. In this paper we show that the same model describes consistently the Hall res…
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It is well documented that SDW in (TMTSF)2PF6 undergoes another phase transition at T*\approx 4K, though the nature of the new low temperature phase is controversial. We have shown recently that the new phase is well described in terms of unconventional SDW (USDW) which modifies the quasiparticle spectrum dramatically. In this paper we show that the same model describes consistently the Hall resistivity observed in (TMTSF)2PF6.
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Submitted 9 August, 2003;
originally announced August 2003.
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Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4
Authors:
Kazumi Maki,
Balázs Dóra,
Mark Kartsovnik,
Attila Virosztek,
Bojana Korin-Hamzic,
Mario Basletic
Abstract:
The low temperature phase (LTP) of alpha-(BEDT-TTF)_2KHg(SCN)_4 salt is known for its surprising angular dependent magnetoresistance (ADMR), which has been studied intensively in the last decade. However, the nature of the LTP has not been understood until now. Here we analyse theoretically ADMR in unconventional (or nodal) charge density wave (UCDW). In magnetic field the quasiparticle spectrum…
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The low temperature phase (LTP) of alpha-(BEDT-TTF)_2KHg(SCN)_4 salt is known for its surprising angular dependent magnetoresistance (ADMR), which has been studied intensively in the last decade. However, the nature of the LTP has not been understood until now. Here we analyse theoretically ADMR in unconventional (or nodal) charge density wave (UCDW). In magnetic field the quasiparticle spectrum in UCDW is quantized, which gives rise to spectacular ADMR. The present model accounts for many striking features of ADMR data in alpha-(BEDT-TTF)_2KHg(SCN)_4.
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Submitted 16 October, 2002;
originally announced October 2002.
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Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures
Authors:
Bojana Korin-Hamzic,
Emil Tafra,
Mario Basletic,
Amir Hamzic,
Gabriele Untereiner,
Martin Dressel
Abstract:
We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} \approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liqu…
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We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} \approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liquid models. We propose that the transport properties of quasi one-dimensional Bechgaard salts at high temperatures can be described within the Fermi liquid description.
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Submitted 23 January, 2003; v1 submitted 19 July, 2002;
originally announced July 2002.
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The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4
Authors:
Balázs Dóra,
Kazumi Maki,
Bojana Korin-Hamzic,
Mario Basletic,
Attila Virosztek,
Mark V. Kartsovnik,
Harald Müller
Abstract:
In spite of extensive experimental studies of the angular dependent magnetoresistance (ADMR) of the low temperature phase (LTP) of alpha-(BEDT-TTF)_2KHg(SCN)_4 about a decade ago, the nature of LTP remains elusive. Here we present a new study of ADMR of LTP in alpha-(ET)_2 salts assuming that LTP is unconventional charge density wave (UCDW). In the presence of magnetic field the quasiparticle sp…
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In spite of extensive experimental studies of the angular dependent magnetoresistance (ADMR) of the low temperature phase (LTP) of alpha-(BEDT-TTF)_2KHg(SCN)_4 about a decade ago, the nature of LTP remains elusive. Here we present a new study of ADMR of LTP in alpha-(ET)_2 salts assuming that LTP is unconventional charge density wave (UCDW). In the presence of magnetic field the quasiparticle spectrum in UCDW is quantized, which gives rise to striking ADMR in UCDW. The present model appears to account for many existing ADMR data of alpha-(BEDT-TTF)_2KHg(SCN)_4 remarkably well.
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Submitted 15 April, 2002;
originally announced April 2002.
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Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization
Authors:
Bojana Korin-Hamzic,
Mario Basletic,
Kazumi Maki
Abstract:
Magnetoresistance in the spin-density wave (SDW) state of (TMTSF)2PF6 is known to exhibit a rich variety of the angular dependencies when a magnetic field B is rotated in the b'-c*, a-b' and a-c* planes. In the presence of a magnetic field the quasiparticle spectrum in the SDW with imperfect nesting is quantized. In such a case the minimum quasiparticle energy depends both on the magnetic field…
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Magnetoresistance in the spin-density wave (SDW) state of (TMTSF)2PF6 is known to exhibit a rich variety of the angular dependencies when a magnetic field B is rotated in the b'-c*, a-b' and a-c* planes. In the presence of a magnetic field the quasiparticle spectrum in the SDW with imperfect nesting is quantized. In such a case the minimum quasiparticle energy depends both on the magnetic field strength |B| and the angle θbetween the field and the crystal direction a, b' or c*. This approach describes rather satisfactory the magnetoresistance above T*~4K.
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Submitted 12 March, 2002;
originally announced March 2002.
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Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K
Authors:
Mario Basletic,
Bojana Korin-Hamzic,
Kazumi Maki
Abstract:
The presence of subphases in spin-density wave (SDW) phase of (TMTSF)2PF6 below T* ~ 4K has been suggested by several experiments but the nature of the new phase is still controversial. We have investigated the temperature dependence of the angular dependence of the magnetoresistance in the SDW phase which shows different features for temperatures above and below T*. For T > 4K the magnetoresist…
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The presence of subphases in spin-density wave (SDW) phase of (TMTSF)2PF6 below T* ~ 4K has been suggested by several experiments but the nature of the new phase is still controversial. We have investigated the temperature dependence of the angular dependence of the magnetoresistance in the SDW phase which shows different features for temperatures above and below T*. For T > 4K the magnetoresistance can be understood in terms of the Landau quantization of the quasiparticle spectrum in a magnetic field, where the imperfect nesting plays the crucial role. We propose that below T* ~ 4K the new unconventional SDW (USDW) appears modifying dramatically the quasiparticle spectrum. Unlike conventional SDW the order parameter of USDW depends on the quasiparticle momentum. The present model describes many features of the angular dependence of magnetoresistance reasonably well. Therefore, we may conclude that the subphase in (TMTSF)2PF6 below T* ~ 4K is described as SDW plus USDW.
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Submitted 16 July, 2002; v1 submitted 19 February, 2002;
originally announced February 2002.
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Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8
Authors:
M. Pozek,
A. Dulcic,
D. Paar,
A. Hamzic,
M. Basletic,
E. Tafra,
G. V. M. Williams,
S. Kramer
Abstract:
Comprehensive measurements of dc and ac susceptibility, dc resistance, magnetoresistance, Hall resistivity, and microwave absorption and dispersion in fields up to 8 T have been carried out on RuSr_2GdCu_2O_8 with the aim to establish the properties of RuO_2 and CuO_2 planes. At ~130 K, where the magnetic order develops in the RuO_2 planes, one observes a change in the slope of dc resistance, ch…
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Comprehensive measurements of dc and ac susceptibility, dc resistance, magnetoresistance, Hall resistivity, and microwave absorption and dispersion in fields up to 8 T have been carried out on RuSr_2GdCu_2O_8 with the aim to establish the properties of RuO_2 and CuO_2 planes. At ~130 K, where the magnetic order develops in the RuO_2 planes, one observes a change in the slope of dc resistance, change in the sign of magnetoresistance, and the appearance of an extraordinary Hall effect. These features indicate that the RuO_2 planes are conducting. A detailed analysis of the ac susceptibility and microwave data on both, ceramic and powder samples show that the penetration depth remains frequency dependent and larger than the London penetration depth even at low temperatures. We conclude that the conductivity in the RuO_2 planes remains normal even when superconducting order is developed in the CuO_2 planes below \~45 K. Thus, experimental evidence is provided in support of theoretical models which base the coexistence of superconductivity and magnetic order on decoupled CuO_2 and RuO_2 planes.
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Submitted 20 December, 2001;
originally announced December 2001.
