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Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface
Authors:
Akash Kumar,
Avinash Kumar Chaurasiya,
Niru Chowdhury,
Amrit Kumar Mondal,
Rajni Bansal,
Arun Barvat,
Suraj P Khanna,
Prabir Pal,
Sujeet Chaudhary,
Anjan Barman,
P. K. Muduli
Abstract:
We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/T…
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We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.
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Submitted 15 June, 2020; v1 submitted 14 April, 2020;
originally announced April 2020.
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Ultrasensitive Self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes
Authors:
Nisha Prakash,
Manjri Singh,
Gaurav Kumar,
Arun Barvat,
Kritika Anand,
Prabir Pal,
Surinder P. Singh,
Suraj P. Khanna
Abstract:
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ~ 5.3% photosensivity at 350 nm illumination (18 microWatt/cm^2). The responsivity and detectivity of the hybrid device were fo…
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A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ~ 5.3% photosensivity at 350 nm illumination (18 microWatt/cm^2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45x10^10 Jones (cm Hz^(1/2) W^(-1)), respectively at zero bias under 350 nm illumination (18 microWatt/cm^2) with fast response (60 ms), recovery time (267 ms) and excellent repeatability. Power density-dependent responsivity & detectivity revealed ultrasensitive behaviour under low light conditions. The source of observed self-powered effect in hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.
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Submitted 15 November, 2016; v1 submitted 11 November, 2016;
originally announced November 2016.
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Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3
Authors:
Hitesh Borkar,
Vaibhav Rao,
Soma Dutta,
Arun Barvat,
Prabir Pal,
M Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld ana…
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We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2) which is confirmed by the high resolution transmission electron diffraction pattern. Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulture relation. It shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d33 ~ 233 pm/V) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (Tm). The underlying physics for light-sensitive dielectric dispersion was probed by X-ray photon spectroscopy (XPS) which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, are responsible for most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4+ states and sit at the centers of the TiO6 octahedra, which along with asymmetric hybridization between O 2p and Bi 6s orbitals appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.
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Submitted 31 January, 2016;
originally announced February 2016.
