-
Electrical resistance associated with the scattering of optically oriented electrons in n-GaAs
Authors:
M. D. Ragoza,
N. V. Kozyrev,
S. V. Nekrasov,
B. R. Namozov,
Yu. G. Kusrayev,
N. Bart,
A. Ludwig,
A. D. Wieck
Abstract:
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scatter…
▽ More
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scattering of electrons by neutral donors. It was found that the sign of the magnetoresistance does not depend on the sign of the exciting light circular polarization, the effect is even with respect to the sign of the spin polarization of the carriers, which indicates a correlation between the spins of optically oriented free electrons and electrons localized on donors.
△ Less
Submitted 30 November, 2023;
originally announced November 2023.
-
Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy
Authors:
Daniel Wigger,
Johannes Schall,
Marielle Deconinck,
Nikolai Bart,
Paweł Mrowiński,
Mateusz Krzykowski,
Krzysztof Gawarecki,
Martin von Helversen,
Ronny Schmidt,
Lucas Bremer,
Frederik Bopp,
Dirk Reuter,
Andreas D. Wieck,
Sven Rodt,
Julien Renard,
Gilles Nogues,
Arne Ludwig,
Paweł Machnikowski,
Jonathan J. Finley,
Stephan Reitzenstein,
Jacek Kasprzak
Abstract:
Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical s…
▽ More
Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes.
△ Less
Submitted 20 April, 2023;
originally announced April 2023.
-
Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule
Authors:
Frederik Bopp,
Charlotte Cullip,
Christopher Thalacker,
Michelle Lienhart,
Johannes Schall,
Nikolai Bart,
Friedrich Sbresny,
Katarina Boos,
Sven Rodt,
Dirk Reuter,
Arne Ludwig,
Andreas D. Wieck,
Stephan Reitzenstein,
Filippo Troiani,
Guido Goldoni,
Elisa Molinari,
Kai Müller,
Jonathan J. Finley
Abstract:
Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions…
▽ More
Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance.
△ Less
Submitted 22 March, 2023;
originally announced March 2023.
-
Independent electrical control of two quantum dots coupled through a photonic-crystal waveguide
Authors:
Xiao-Liu Chu,
Camille Papon,
Nikolai Bart,
Andreas D. Wieck,
Arne Ludwig,
Leonardo Midolo,
Nir Rotenberg,
Peter Lodahl
Abstract:
Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of solid-state platforms require individual tuning of each emitter. We present the realization of two semiconductor quantum dot emitters that are efficiently coupled…
▽ More
Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of solid-state platforms require individual tuning of each emitter. We present the realization of two semiconductor quantum dot emitters that are efficiently coupled to a photonic-crystal waveguide and individually controllable by applying a local electric Stark field. We present resonant transmission and fluorescence spectra in order to probe the coupling of the two emitters to the waveguide. We exploit the single-photon stream from one quantum dot to perform spectroscopy on the second quantum dot positioned 16$μ$m away in the waveguide. Furthermore, power-dependent resonant transmission measurements reveals signatures of coherent coupling between the emitters. Our work provides a scalable route to realizing multi-emitter collective coupling, which has inherently been missing for solid-state deterministic photon emitters.
△ Less
Submitted 3 March, 2023; v1 submitted 1 March, 2023;
originally announced March 2023.
-
Coherent driving of direct and indirect excitons in a quantum dot molecule
Authors:
Frederik Bopp,
Johannes Schall,
Nikolai Bart,
Florian Vogl,
Charlotte Cullip,
Friedrich Sbresny,
Katarina Boos,
Christopher Thalacker,
Michelle Lienhart,
Sven Rodt,
Dirk Reuter,
Arne Ludwig,
Andreas Wieck,
Stephan Reitzenstein,
Kai Müller,
Jonathan J. Finley
Abstract:
Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybri…
▽ More
Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybridized electron wave function. An off-resonant detection technique based on phonon-mediated state transfer allows for spectrally filtered detection under resonant excitation. Applying a gate voltage to the QDM-device enables a continuous transition between direct and indirect excitons and, thereby, control of the overlap of the electron and hole wave function. This does not only vary the Rabi frequency of the investigated transition by a factor of $\approx3$, but also allows to optimize graph state generation in terms of optical pulse power and reduction of radiative lifetimes.
△ Less
Submitted 31 January, 2023;
originally announced January 2023.
-
Bright electrically controllable quantum-dot-molecule devices fabricated by in-situ electron-beam lithography
Authors:
Johannes Schall,
Marielle Deconinck,
Nikolai Bart,
Matthias Florian,
Martin von Helversen,
Christian Dangel,
Ronny Schmidt,
Lucas Bremer,
Frederik Bopp,
Isabell Hüllen,
Christopher Gies,
Dirk Reuter,
Andreas D. Wieck,
Sven Rodt,
Jonathan J. Finley,
Frank Jahnke,
Arne Ludwig,
Stephan Reitzenstein
Abstract:
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable s…
▽ More
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.
△ Less
Submitted 8 April, 2021; v1 submitted 10 January, 2021;
originally announced January 2021.
-
Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Authors:
N. Bart,
C. Dangel,
P. Zajac,
N. Spitzer,
J. Ritzmann,
M. Schmidt,
H. G. Babin,
R. Schott,
S. R. Valentin,
S. Scholz,
Y. Wang,
R. Uppu,
D. Najer,
M. C. Löbl,
N. Tomm,
A. Javadi,
N. O. Antoniadis,
L. Midolo,
K. Müller,
R. J. Warburton,
P. Lodahl,
A. D. Wieck,
J. J. Finley,
A. Ludwig
Abstract:
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u…
▽ More
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.
△ Less
Submitted 9 December, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
