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Strategies for reducing frequency scatter in large arrays of superconducting resonators
Authors:
J. Li,
P. S. Barry,
Z. Pan,
C. Albert,
T. Cecil,
C. L. Chang,
K. Dibert,
M. Lisovenko,
V. Yefremenko
Abstract:
Superconducting resonators are now found in a broad range of applications that require high-fidelity measurement of low-energy signals. A common feature across almost all of these applications is the need for increased numbers of resonators to further improve sensitivity, and the ability to read out large numbers of resonators without the need for additional cryogenic complexity is a primary motiv…
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Superconducting resonators are now found in a broad range of applications that require high-fidelity measurement of low-energy signals. A common feature across almost all of these applications is the need for increased numbers of resonators to further improve sensitivity, and the ability to read out large numbers of resonators without the need for additional cryogenic complexity is a primary motivation. One of the major limitations of current resonator arrays is the observed scatter in the resonator frequencies when compared to the initial design. Here we present recent progress toward identifying one of the dominant underlying causes of resonator scatter, inductor line width fluctuation. We designed and fabricated an array of lumped-element resonators with inductor line width changing from 1.8um to 2.2um in step of 0.1um defined with electron-beam lithography to probe and quantify the systematic variation of resonance frequency across a 6-inch wafer. The resonators showed a linear frequency shift of 20MHz (140FWHM) and 30MHz (214FWHM), respectively, as they are connected to two different capacitors. This linear relationship matches our theoretical prediction. The widely used MLA photon lithography facility for MKID fabrication has a resolution on the order of 600nm, which could cause frequency fluctuation on the order of 100MHz or 710FWHM.
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Submitted 21 March, 2022;
originally announced March 2022.
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Coherent coupling of two remote magnonic resonators mediated by superconducting circuits
Authors:
Yi Li,
Volodymyr G. Yefremenko,
Marharyta Lisovenko,
Cody Trevillian,
Tomas Polakovic,
Thomas W. Cecil,
Pete S. Barry,
John Pearson,
Ralu Divan,
Vasyl Tyberkevych,
Clarence L. Chang,
Ulrich Welp,
Wai-Kwong Kwok,
Valentine Novosad
Abstract:
We demonstrate microwave-mediated distant magnon-magnon coupling on a superconducting circuit platform, incorporating chip-mounted single-crystal Y$_3$Fe$_5$O$_{12}$ (YIG) spheres. Coherent level repulsion and dissipative level attraction between the magnon modes of the two YIG spheres are demonstrated. The former is mediated by cavity photons of a superconducting resonator, and the latter is medi…
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We demonstrate microwave-mediated distant magnon-magnon coupling on a superconducting circuit platform, incorporating chip-mounted single-crystal Y$_3$Fe$_5$O$_{12}$ (YIG) spheres. Coherent level repulsion and dissipative level attraction between the magnon modes of the two YIG spheres are demonstrated. The former is mediated by cavity photons of a superconducting resonator, and the latter is mediated by propagating photons of a coplanar waveguide. Our results open new avenues towards exploring integrated hybrid magnonic networks for coherent information processing on a quantum-compatible superconducting platform.
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Submitted 15 January, 2022;
originally announced January 2022.
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Atomic layer deposition of titanium nitride for quantum circuits
Authors:
A. Shearrow,
G. Koolstra,
S. J. Whiteley,
N. Earnest,
P. S. Barry,
F. J. Heremans,
D. D. Awschalom,
E. Shirokoff,
D. I. Schuster
Abstract:
Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factor…
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Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.4 to 1.0 million and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kOhm, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ohm resonator, transformative for hybrid quantum systems and quantum sensing.
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Submitted 24 August, 2018; v1 submitted 17 August, 2018;
originally announced August 2018.
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A Strained Silicon Cold Electron Bolometer using Schottky Contacts
Authors:
T. L. R. Brien,
P. A. R. Ade,
P. S. Barry,
C. Dunscombe,
D. R. Leadley,
D. V. Morozov,
M. Myronov,
E. H. C. Parker,
M. Prunnila,
M. J. Prest,
R. V. Sudiwala,
T. E. Whall,
P. D. Mauskopf
Abstract:
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in…
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We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to $160~\mathrm{GHz}$ and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of $50~\%$ for radiation coupled into the device by the planar antenna and an overall noise equivalent power (NEP), referred to absorbed optical power, of $1.1 \times 10^{-16}~\mathrm{\mbox{W Hz}^{-1/2}}$ when the detector is observing a $300~\mathrm{K}$ source through a $4~\mathrm{K}$ throughput limiting aperture. Even though this optical system is not optimised we measure a system noise equivalent temperature difference (NETD) of $6~\mathrm{\mbox{mK Hz}^{-1/2}}$. We measure the noise of the device using a cross-correlation of time stream data measured simultaneously with two junction field-effect transistor (JFET) amplifiers, with a base correlated noise level of $300~\mathrm{\mbox{pV Hz}^{-1/2}}$ and find that the total noise is consistent with a combination of photon noise, current shot noise and electron-phonon thermal noise.
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Submitted 31 July, 2014; v1 submitted 8 July, 2014;
originally announced July 2014.
