Showing 1–12 of 12 results for author: Barrios-Vargas, J E

Edge-state transport in twisted bilayer graphene

Authors: Jesús Arturo Sánchez-Sánchez, Montserrat Navarro-Espino, José Eduardo Barrios-Vargas, Thomas Stegmann

Abstract: We investigate the electronic structure and transport properties of twisted bilayer graphene (TBLG) at a twist angle of $θ\approx 1.696\text{°}$. Using a combination of molecular dynamics and tight-binding calculations, we find two superlattice gaps in the energy spectrum of the bulk, which emerge close to the Fermi level from the atomic rearrangement of the carbon atoms leading to a corrugation o… ▽ More We investigate the electronic structure and transport properties of twisted bilayer graphene (TBLG) at a twist angle of $θ\approx 1.696\text{°}$. Using a combination of molecular dynamics and tight-binding calculations, we find two superlattice gaps in the energy spectrum of the bulk, which emerge close to the Fermi level from the atomic rearrangement of the carbon atoms leading to a corrugation of the graphene sheets. Nanoribbons made from 1.696°-TBLG show edge-localized states inside the superlattice gaps. Applying the Green's function method, we demonstrate that the edge states carry electronic current with conductance values close to the conductance quantum. The edge states can generate a non-local resistance, which is not due to one-way transport at the edges but due to the fact that these states are localized only at certain edges of the system, depending on how the nanoribbon has been cut from the bulk. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Comments: 9 pages, 6 figures

Impact of impurities on the topological boundaries and edge state localization in a staggered chain of atoms: SSH model and its topoelectrical circuit realization

Authors: Julio César Pérez-Pedraza, José Eduardo Barrios-Vargas, Alfredo Raya

Abstract: We study the Su-Schrieffer-Hegger model, perhaps the simplest realization of a topological insulator, in the presence of an embedded impurity superlattice. We consider the impact of the said impurity by changing the hopping amplitudes between them and their nearest neighbors in the topological boundaries and the edge state localization in the chain of atoms. Within a tight-binding approach and thr… ▽ More We study the Su-Schrieffer-Hegger model, perhaps the simplest realization of a topological insulator, in the presence of an embedded impurity superlattice. We consider the impact of the said impurity by changing the hopping amplitudes between them and their nearest neighbors in the topological boundaries and the edge state localization in the chain of atoms. Within a tight-binding approach and through a topolectrical circuit simulation, we consider three different impurity-hopping amplitudes. We found a relaxation of the condition between hopping parameters for the topologically trivial and non-trivial phase boundary and a more profound edge state localization given by the impurity position within the supercell. △ Less

Submitted 7 February, 2024; originally announced February 2024.

Steering the current flow in twisted bilayer graphene

Authors: Jesús Arturo Sánchez-Sánchez, Montserrat Navarro-Espino, Yonatan Betancur-Ocampo, José Eduardo Barrios-Vargas, Thomas Stegmann

Abstract: A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the lateral edges of the top layer. The current is steered to the opposite lateral edge, if either the twist angle is reversed or the electrons are injected in the vale… ▽ More A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the lateral edges of the top layer. The current is steered to the opposite lateral edge, if either the twist angle is reversed or the electrons are injected in the valence band instead of the conduction band, making it possible to control the current flow by electric gates. When both graphene layers are aligned, the current passes straight through the system without changing its initial direction. The observed steering angle exceeds well the twist angle and emerges for a broad range of experimentally accessible parameters. It is explained by the trigonal shape of the energy bands beyond the van Hove singularity due to the Moiré interference pattern. As the shape of the energy bands depends on the valley degree of freedom, the steered current is partially valley polarized. Our findings show how to control and manipulate the current flow in TBLG. Technologically, they are of relevance for applications in twistronics and valleytronics. △ Less

Submitted 11 June, 2021; originally announced June 2021.

Comments: 10 pages, 10 figures

Effective magnetic field induced by inhomogeneous Fermi velocity in strained honeycomb structures

Authors: M. Oliva-Leyva, J. E. Barrios-Vargas, G. Gonzalez de la Cruz

Abstract: In addition to the known pseudomagnetic field, nonuniform strains independently induce a position-dependent Fermi velocity (PDFV) in graphene. Here we demonstrate that, due to the presence of a PDFV, the Dirac fermions on a nonuniform (strained) honeycomb lattice may experiment a sort of magnetic effect, which is linearly proportional to the momentum of the quasiparticle. As a consequence, the qua… ▽ More In addition to the known pseudomagnetic field, nonuniform strains independently induce a position-dependent Fermi velocity (PDFV) in graphene. Here we demonstrate that, due to the presence of a PDFV, the Dirac fermions on a nonuniform (strained) honeycomb lattice may experiment a sort of magnetic effect, which is linearly proportional to the momentum of the quasiparticle. As a consequence, the quasiparticles have a sublinear dispersion relation. Moreover, we analyze the general consequence of a PDFV on the Klein tunneling of electrons through pseudomagnetic barriers. In particular, we report an anomalous (Klein) tunneling for an electron passing across velocity barriers with magnetic features. Our findings about the effects induced by a PDFV on Dirac fermions in (2D) strained honeycomb lattice could be extended to (3D) Dirac and Weyl semimetals and/or its analogous artificial systems. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 10 pages, 5 figures; final version as published in PRB

Journal ref: Phys. Rev. B 102, 035447 (2020)

Linear Scaling Quantum Transport Methodologies

Authors: Zheyong Fan, Jose Hugo Garcia, Aron W. Cummings, Jose Eduardo Barrios-Vargas, Michel Panhans, Ari Harju, Frank Ortmann, Stephan Roche

Abstract: In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools… ▽ More In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order-$N$ computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo-Greenwood and Kubo-Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described. △ Less

Submitted 20 August, 2020; v1 submitted 18 November, 2018; originally announced November 2018.

Comments: 54 pages, 31 figures, Invited Review of Physics Reports

Journal ref: Phys. Rep. 903, 1-69 (2021)

Fingerprints of a position-dependent Fermi velocity on scanning tunnelling spectra of strained graphene

Authors: M. Oliva-Leyva, J. E. Barrios-Vargas, Chumin Wang

Abstract: Nonuniform strain in graphene induces a position dependence of the Fermi velocity, as recently demonstrated by scanning tunnelling spectroscopy experiments. In this work, we study the effects of a position-dependent Fermi velocity on the local density of states (LDOS) of strained graphene, without and with the presence of a uniform magnetic field. The variation of LDOS obtained from tight-binding… ▽ More Nonuniform strain in graphene induces a position dependence of the Fermi velocity, as recently demonstrated by scanning tunnelling spectroscopy experiments. In this work, we study the effects of a position-dependent Fermi velocity on the local density of states (LDOS) of strained graphene, without and with the presence of a uniform magnetic field. The variation of LDOS obtained from tight-binding calculations is successfully explained by analytical expressions derived within the Dirac approach. These expressions also rectify a rough Fermi velocity substitution used in the literature that neglects the strain-induced anisotropy. The reported analytical results could be useful for understanding the nonuniform strain effects on scanning tunnelling spectra of graphene, as well as when it is exposed to an external magnetic field. △ Less

Submitted 23 January, 2018; originally announced January 2018.

Comments: Revised version as published in JPCM

Journal ref: J. Phys.: Condens. Matter 30 085702 (2018)

Localized electronic states at grain boundaries on the surface of graphene and graphite

Authors: Adina Luican-Mayer, Jose E. Barrios-Vargas, Jesper Toft Falkenberg, Gabriel Autès, Aron W. Cummings, David Soriano, Guohong Li, Mads Brandbyge, Oleg V. Yazyev, Stephan Roche, Eva Y. Andrei

Abstract: Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexib… ▽ More Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Quantum Transport in Graphene in Presence of Strain-Induced Pseudo-Landau Levels

Authors: Mikkel Settnes, Nicolas Leconte, Jose E. Barrios-Vargas, Antti-Pekka Jauho, Stephan Roche

Abstract: We report on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. Strain-induced pLLs yiel… ▽ More We report on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. Strain-induced pLLs yield enhanced scattering effects across the energy spectrum resulting in lower mean free path and enhanced localization effects. In the vicinity of the zeroth order pLL, we demonstrate an anomalous transport regime, where the mean free paths increases with disorder. We attribute this puzzling behavior to the low-energy sub-lattice polarization induced by the zeroth order pLL, which is unique to pseudomagnetic fields preserving time-reversal symmetry. These results, combined with the experimental feasibility of reversible deformation fields, open the way to tailor a metal-insulator transition driven by pseudomagnetic fields. △ Less

Submitted 25 July, 2016; originally announced July 2016.

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Authors: Achim Woessner, Pablo Alonso-González, Mark B. Lundeberg, Yuanda Gao, Jose E. Barrios-Vargas, Gabriele Navickaite, Qiong Ma, Davide Janner, Kenji Watanabe, Aron W. Cummings, Takashi Taniguchi, Valerio Pruneri, Stephan Roche, Pablo Jarillo-Herrero, James Hone, Rainer Hillenbrand, Frank H. L. Koppens

Abstract: Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic devic… ▽ More Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7, 10783 (2016)

Electron localization in disordered graphene: multifractal properties of the wavefunctions

Authors: J. E. Barrios-Vargas, Gerardo G. Naumis

Abstract: An analysis of the electron localization properties in doped graphene is performed by doing a numerical multifractal analysis. By obtaining the singularity spectrum of a tight-binding model, it is found that the electron wave functions present a multifractal behavior. Such multifractality is preserved even for second neighbor interaction, which needs to be taken into account if a comparison is des… ▽ More An analysis of the electron localization properties in doped graphene is performed by doing a numerical multifractal analysis. By obtaining the singularity spectrum of a tight-binding model, it is found that the electron wave functions present a multifractal behavior. Such multifractality is preserved even for second neighbor interaction, which needs to be taken into account if a comparison is desired with experimental results. States close to the Dirac point have a wider multifractal character than those far from this point as the impurity concentration is increased. The analysis of the results allows to conclude that in the split-band limit, where impurities act as vacancies, the system can be well described by a chiral orthogonal symmetry class, with a singularity spectrum transition approaching freezing as disorder increases. This also suggests that in doped graphene, localization is in contrast with the conventional picture of Anderson localization in two dimensions, showing also that the common belief of the absence of quantum percolation in two dimensional systems needs to be revised. △ Less

Submitted 27 June, 2013; originally announced June 2013.

Comments: 5 pages, 7 figures

Critical wave functions in disordered graphene

Authors: J. E. Barrios-Vargas, Gerardo G. Naumis

Abstract: In order to elucidate the presence of non-localized states in doped graphene, an scaling analysis of the wave function moments known as inverse participation ratios is performed. The model used is a tight- binding hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wave functions that follow a crit… ▽ More In order to elucidate the presence of non-localized states in doped graphene, an scaling analysis of the wave function moments known as inverse participation ratios is performed. The model used is a tight- binding hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wave functions that follow a critical (power-law) decay, which are between a metallic and insulating behavior. The power-law exponent distribution is robust against the inclusion of next-nearest neighbors and on growing the system size. △ Less

Submitted 11 February, 2012; originally announced February 2012.

Comments: 4 pages, 3 figures

MSC Class: 82-02

Electrical conductivity and resonant states of doped graphene considering next-nearest neighbor interaction

Authors: J. E. Barrios-Vargas, Gerardo G Naumis

Abstract: The next-nearest neighbor interaction (NNN) is included in a tight-binding calculation of the electronic spectrum and conductivity of doped graphene. As a result, we observe a wide variation of the conductivity behavior, since the Fermi energy and the resonance peak are not shifted by the same amount. Such effect can have a profound effect in the idea of explaining the minimal conductivity of grap… ▽ More The next-nearest neighbor interaction (NNN) is included in a tight-binding calculation of the electronic spectrum and conductivity of doped graphene. As a result, we observe a wide variation of the conductivity behavior, since the Fermi energy and the resonance peak are not shifted by the same amount. Such effect can have a profound effect in the idea of explaining the minimal conductivity of graphene as a consequence of impurities or defects. Finally, we also estimate the mean free path and relaxation time due to resonant impurity scattering. △ Less

Submitted 4 March, 2011; originally announced March 2011.

Journal ref: Phil. Mag. 91, 3844-3857 (2011)