Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Authors:
R. A. Barcan,
I. Samaras,
K. Barr,
G. Juska,
E. Pelucchi,
K. G. Lagoudakis
Abstract:
We investigate site-controlled In$_{0.25}$Ga$_{0.75}$As quantum dots in (111)B GaAs pyramidal recesses as spin qubits. Combining scanning confocal cryomicroscopy, magneto-photoluminescence studies and resonant excitation, we identify and isolate a positively charged exciton with a hole-spin in its ground state. Application of a strong 5 T magnetic field parallel to the growth axis, induces a fourf…
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We investigate site-controlled In$_{0.25}$Ga$_{0.75}$As quantum dots in (111)B GaAs pyramidal recesses as spin qubits. Combining scanning confocal cryomicroscopy, magneto-photoluminescence studies and resonant excitation, we identify and isolate a positively charged exciton with a hole-spin in its ground state. Application of a strong 5 T magnetic field parallel to the growth axis, induces a fourfold splitting of the energy levels of the positively charged exciton creating an optically addressable double-lambda system. We combine weak above-band and resonant excitation to demonstrate spin pumping and high-fidelity spin initialization through all four optical transitions and study the system behavior as a function of the resonant driving strength showing the existence of a robust spin that can be optically pumped and initialized. These results demonstrate the potential of these quantum dots for precise spin manipulation and their relevance for future quantum hardware.
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Submitted 7 March, 2025;
originally announced March 2025.
Correlative and in situ microscopy investigation of phase transformation, crystal growth and degradation of antimony sulfide thin films
Authors:
Mingjian Wu,
Maïssa K. S. Barr,
Vanessa M. Koch,
Martin Dierner,
Tobias Dierke,
Penghan Lu,
Johannes Will,
Rafal Dunin-Borkowski,
Janina Maultzsch,
Julien Bachmann,
Erdmann Spiecker
Abstract:
Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory devices, yet challenges remain in achieving high-quality thin films with controlled nucleation and growth for optimal performance. Here, we investigate the phase trans…
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Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory devices, yet challenges remain in achieving high-quality thin films with controlled nucleation and growth for optimal performance. Here, we investigate the phase transformation, crystal structure and properties, growth and degradation of atomic layer deposited Sb$_2$S$_3$ thin films using in situ TEM and correlative ex situ analysis. The as-deposited amorphous films crystallized at 243°C, forming grains with an [100] out-of-plane texture and developed into tens to hundreds of micrometer, leaves-shaped grains. Introducing an ultra-thin ZnS interfacial layer increased nucleation density, and resulted in a few micrometer-sized, more uniform grains while retaining the overall [100] texture. In situ observations and subsequent crystal orientation analysis with cutting-edge 4D-STEM and EBSD revealed that the grains grew faster along the [010] ribbon direction and that the bare films underwent early-stage degradation, forming holes in amorphous regions during annealing. The ZnS interlayer mitigated degradation, stabilizing the films and improving their uniformity. These findings offer valuable insights for optimizing Sb$_2$S$_3$ thin films for applications both as solar cell materials and phase change materials.
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Submitted 19 February, 2025; v1 submitted 16 February, 2025;
originally announced February 2025.