Enhancement of optical absorption in multiferroic (1-x)PZT-xPFN thin films: Experiments and first-principles analysis
Authors:
L. Imhoff,
M. B. Di Marco,
C. Lavado,
S. Barolin,
M. G. Stachiotti
Abstract:
Multiferroic compounds have gained research attention in the field of ferroelectric photovoltaics due to the presence of transition-metal d states from magnetic ions, which tend to reduce the bandgap value. In this work, 0.5Pb(Zr0.52Ti0.48)O3 - 0.5Pb(Fe0.5Nb0.5)O3 PZTFN0.5 thin films were synthesized using a sol-gel route to investigate the effect of iron doping on optical and multiferroic propert…
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Multiferroic compounds have gained research attention in the field of ferroelectric photovoltaics due to the presence of transition-metal d states from magnetic ions, which tend to reduce the bandgap value. In this work, 0.5Pb(Zr0.52Ti0.48)O3 - 0.5Pb(Fe0.5Nb0.5)O3 PZTFN0.5 thin films were synthesized using a sol-gel route to investigate the effect of iron doping on optical and multiferroic properties. For comparative analysis, the end-member compositions, Pb(Zr0.52Ti0.48)O3 (PZT) and Pb(Fe0.5Nb0.5)O3 (PFN), were also synthesized under identical conditions. Our results revealed that the presence of Fe ions, besides inducing multiferroic behavior, effectively enhances the optical absorption of the material in the visible light region. Optical transitions at 3.0 eV (2.4 eV) and 2.7 eV (2.2 eV) for the direct (indirect) bandgap were determined for PZTFN0.5 and PFN, respectively, indicating that the absorption edges of the iron-containing films result more promising than PZT (Eg 3.6eV) for photovoltaic applications. Both PZTFN0.5 and PFN thin films exhibit multiferroic behavior at room temperature, with different electric and magnetic properties. While PZTFN0.5 presents saturated hysteresis loops with remanent polarization values around 10 uC/cm2 and magnetization of 1.6 emu/cm2, PFN displays significantly larger remanence (31 emu/cm2) but poorer ferroelectric properties due to the presence of leakage. Microscopic insights into the structural and electronic properties of the PZTFN0.5 solid solution were provided from first-principles calculations.
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Submitted 9 November, 2023;
originally announced November 2023.
Sol-gel synthesis and multiferroic properties of pyrochlore-free Pb(Fe0.5Nb0.5)O3 thin films
Authors:
L. Imhoff,
M. B. Di Marco,
S. Barolin,
M. A. Rengifo,
M. H. Aguirre,
M. G. Stachiotti
Abstract:
Lead iron niobate (PbFe0.5Nb0.5O3 - PFN) thin films were synthesized by a modified sol-gel route, which offers the advantage of a rapid, simple and non-toxic reaction method. Polycrystalline perovskite-structured PFN thin films without pyrochlore phases were obtained on Pt/Ti/SiO2/Si substrates after sintering by rapid thermal annealing at 650 °C. TEM and AFM images confirmed the excellent quality…
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Lead iron niobate (PbFe0.5Nb0.5O3 - PFN) thin films were synthesized by a modified sol-gel route, which offers the advantage of a rapid, simple and non-toxic reaction method. Polycrystalline perovskite-structured PFN thin films without pyrochlore phases were obtained on Pt/Ti/SiO2/Si substrates after sintering by rapid thermal annealing at 650 °C. TEM and AFM images confirmed the excellent quality of the sintered film, while EDS spectroscopy revealed the presence of oxygen vacancies near the film/substrate interface. Electric measurements show good dielectric properties and ferroelectric behavior, characterized by typical C-V curves and well-defined P-E ferroelectric loops at 1 kHz, with remanent polarization values of ~12 uC/cm2. The polarization, however, increases with decreasing frequency, indicating the presence of leakage currents. I-V measurements show a significant increase in DC-conduction at relatively low fields (around 100 kV/cm). The films display ferromagnetic behavior at room temperature, with magnetic remanence around 30 emu/cm3 and a coercive field of 1 kOe. These values are significantly higher than those obtained for PFN powders fabricated by the same sol-gel route, as well as the magnetization values reported in the literature for epitaxial films.
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Submitted 9 November, 2023;
originally announced November 2023.
