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Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor Co:TiO$_2$
Authors:
H. Saadaoui,
X. Luo,
Z. Salman,
X. Y. Cui,
N. N. Bao,
P. Bao,
R. K. Zheng,
L. Tseng,
Y. H. Du,
T. Prokscha,
A. Suter,
T. Liu,
Y. R. Wang,
S. Li,
J. Ding,
S. P. Ringer,
E. Morenzoni,
J. B. Yi
Abstract:
Here we present a study of magnetism in \CTO\ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transition electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while very low rate or postannealing results in cobalt clustering. Depth resolved low-ener…
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Here we present a study of magnetism in \CTO\ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transition electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while very low rate or postannealing results in cobalt clustering. Depth resolved low-energy muon spin rotation experiments show that films grown at a low oxygen partial pressure ($\approx 10^{-6}$ torr) with a uniform structure are fully magnetic, indicating intrinsic ferromagnetism. First principles calculations identify the beneficial role of low oxygen partial pressure in the realization of uniform carrier-mediated ferromagnetism. This work demonstrates that Co:TiO$_2$ is an intrinsic diluted magnetic semiconductor.
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Submitted 7 December, 2016;
originally announced December 2016.
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Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate
Authors:
S. W. Zeng,
Z. Huang,
W. M. Lv,
N. N. Bao,
K. Gopinadhan,
L. K. Jian,
T. S. Herng,
Z. Q. Liu,
Y. L. Zhao,
C. J. Li,
H. J. Harsan Ma,
P. Yang,
J. Ding,
T. Venkatesan,
Ariando
Abstract:
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by ele…
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We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
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Submitted 7 July, 2015;
originally announced July 2015.
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Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3
Authors:
Z. Q. Liu,
W. Lu,
S. W. Zeng,
J. W. Deng,
Z. Huang,
C. J. Li,
M. Motapothula,
W. M. Lü,
L. Sun,
K. Han,
J. Q. Zhong,
P. Yang,
N. N. Bao,
W. Chen,
J. S. Chen,
Y. P. Feng,
J. M. D. Coey,
T. Venkatesan,
Ariando
Abstract:
We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancem…
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We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.
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Submitted 29 April, 2014; v1 submitted 28 April, 2014;
originally announced April 2014.
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Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals
Authors:
Z. Q. Liu,
W. M. Lu,
S. L. Lim,
X. P. Qiu,
N. N. Bao,
M. Motapothula,
J. B. Yi,
M. Yang,
S. Dhar,
T. Venkatesan,
Ariando
Abstract:
The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The tempe…
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The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The temperature dependence of magnetic moment resembles the temperature dependence of carrier density, indicating that the magnetism is closely related to the free carriers. Our results suggest that the ferromagnetism is induced by oxygen vacancies. In addition, hysteretic magnetoresistance was observed for magnetic field parallel to current, indicating that the magnetic moments are in the plane of the samples. The x-ray photoemission spectroscopy, the static time-of-flight and the dynamic secondary ion mass spectroscopy and proton induced x-ray emission measurements were performed to examine magnetic impurities, showing that the observed ferromagnetism is unlikely due to any magnetic contaminant.
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Submitted 18 June, 2013; v1 submitted 3 January, 2012;
originally announced January 2012.
