Showing 1–6 of 6 results for author: Bao, F

Bayesian state estimation unlocks real-time control in thin film synthesis

Authors: Sumner B. Harris, Ruth Fajardo, Alexander A. Puretzky, Kai Xiao, Feng Bao, Rama K. Vasudevan

Abstract: The rapid validation of newly predicted materials through autonomous synthesis requires real-time adaptive control methods that exploit physics knowledge, a capability that is lacking in most systems. Here, we demonstrate an approach to enable the real-time control of thin film synthesis by combining in situ optical diagnostics with a Bayesian state estimation method. We developed a physical model… ▽ More The rapid validation of newly predicted materials through autonomous synthesis requires real-time adaptive control methods that exploit physics knowledge, a capability that is lacking in most systems. Here, we demonstrate an approach to enable the real-time control of thin film synthesis by combining in situ optical diagnostics with a Bayesian state estimation method. We developed a physical model for film growth and applied the Direct Filter (DF) method for real-time estimation of nucleation and growth rates during pulsed laser deposition (PLD) of transition metal dichalcogenides. We validated the approach on simulated and previously acquired reflectivity data for WSe$_2$ growth and ultimately deployed the algorithm on an autonomous PLD system during growth of 1T$^\prime$-MoTe$_2$ under various synthesis conditions. We found that the DF robustly estimates growth parameters in real-time at early stages of growth, down to 15% percent monolayer area coverage. This approach opens new opportunities for adaptive film growth control based on a fusion of in situ diagnostics, modern data assimilation methods, and physical models which promises to enable control of synthesis trajectories towards desired material states. △ Less

Submitted 31 October, 2024; originally announced October 2024.

Robust charge-density wave correlations in the electron-doped single-band Hubbard model

Authors: Peizhi Mai, Nathan S. Nichols, Seher Karakuzu, Feng Bao, Adrian Del Maestro, Thomas A. Maier, Steven Johnston

Abstract: There is growing evidence that the hole-doped single-band Hubbard and $t$-$J$ models do not have a superconducting ground state reflective of the high-temperature cuprate superconductors but instead have striped spin- and charge-ordered ground states. Nevertheless, it is proposed that these models may still provide an effective low-energy model for electron-doped materials. Here we study the finit… ▽ More There is growing evidence that the hole-doped single-band Hubbard and $t$-$J$ models do not have a superconducting ground state reflective of the high-temperature cuprate superconductors but instead have striped spin- and charge-ordered ground states. Nevertheless, it is proposed that these models may still provide an effective low-energy model for electron-doped materials. Here we study the finite temperature spin and charge correlations in the electron-doped Hubbard model using quantum Monte Carlo dynamical cluster approximation calculations and contrast their behavior with those found on the hole-doped side of the phase diagram. We find evidence for a charge modulation with both checkerboard and unidirectional components decoupled from any spin-density modulations. These correlations are inconsistent with a weak-coupling description based on Fermi surface nesting, and their doping dependence agrees qualitatively with resonant inelastic x-ray scattering measurements. Our results provide evidence that the single-band Hubbard model describes the electron-doped cuprates. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Authors: Hao Deng, Zhijun Song, Ran Gao, Tian Xia, Feng Bao, Xun Jiang, Hsiang-Sheng Ku, Zhisheng Li, Xizheng Ma, Jin Qin, Hantao Sun, Chengchun Tang, Tenghui Wang, Feng Wu, Wenlong Yu, Gengyan Zhang, Xiaohang Zhang, Jingwei Zhou, Xing Zhu, Yaoyun Shi, Hui-Hai Zhao, Chunqing Deng

Abstract: Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride… ▽ More Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Reconstruction of effective potential from statistical analysis of dynamic trajectories

Authors: Ali Yousefzadi Nobakht, Ondrej Dyck, David B. Lingerfelt, Feng Bao, Maxim Ziatdinov, Artem Maksov, Bobby G. Sumpter, Richard Archibald, Stephen Jesse, Sergei V. Kalinin, Kody J. H. Law

Abstract: The broad incorporation of microscopic methods is yielding a wealth of information on atomic and mesoscale dynamics of individual atoms, molecules, and particles on surfaces and in open volumes. Analysis of such data necessitates statistical frameworks to convert observed dynamic behaviors to effective properties of materials. Here we develop a method for stochastic reconstruction of effective act… ▽ More The broad incorporation of microscopic methods is yielding a wealth of information on atomic and mesoscale dynamics of individual atoms, molecules, and particles on surfaces and in open volumes. Analysis of such data necessitates statistical frameworks to convert observed dynamic behaviors to effective properties of materials. Here we develop a method for stochastic reconstruction of effective acting potentials from observed trajectories. Using the Silicon vacancy defect in graphene as a model, we develop a statistical framework to reconstruct the free energy landscape from calculated atomic displacements. △ Less

Submitted 27 February, 2020; originally announced February 2020.

Comments: 12 pages, 5 figures. This manuscript is a part of update to previous work (arXiv:1804.03729v1) authors found some of the analysis in the previous work to be not accurate and this manuscript is a partial update to that work

Single atom force measurements: mapping potential energy landscapes via electron beam induced single atom dynamics

Authors: Ondrej Dyck, Feng Bao, Maxim Ziatdinov, Ali Yousefzadi Nobakht, Seungha Shin, Kody Law, Artem Maksov, Bobby G. Sumpter, Richard Archibald, Stephen Jesse, Sergei V. Kalinin

Abstract: In the last decade, the atomically focused beam of a scanning transmission electron microscope (STEM) was shown to induce a broad set of transformations of material structure, open pathways for probing atomic-scale reactions and atom-by-atom matter assembly. However, the mechanisms of beam-induced transformations remain largely unknown, due to an extreme mismatch between the energy and time scales… ▽ More In the last decade, the atomically focused beam of a scanning transmission electron microscope (STEM) was shown to induce a broad set of transformations of material structure, open pathways for probing atomic-scale reactions and atom-by-atom matter assembly. However, the mechanisms of beam-induced transformations remain largely unknown, due to an extreme mismatch between the energy and time scales of electron passage through solids and atomic and molecular motion. Here, we demonstrate that a single dopant Si atom in the graphene lattice can be used as an atomic scale force sensor, providing information on the random force exerted by the beam on chemically-relevant time scales. Using stochastic reconstruction of molecular dynamic simulations, we recover the potential energy landscape of the atom and use it to determine the beam-induced effects in the thermal (i.e. white noise) approximation. We further demonstrate that the moving atom under beam excitation can be used to map potential energy along step edges, providing information about atomic-scale potentials in solids. These studies open the pathway for quantitative studies of beam-induced atomic dynamics, elementary mechanisms of solid-state transformations, and predictive atom-by-atom fabrication. △ Less

Submitted 10 April, 2018; originally announced April 2018.

Fast and Efficient Stochastic Optimization for Analytic Continuation

Authors: F. Bao, Y. Tang, M. Summers, G. Zhang, C. Webster, V. Scarola, T. A. Maier

Abstract: The analytic continuation of imaginary-time quantum Monte Carlo data to extract real-frequency spectra remains a key problem in connecting theory with experiment. Here we present a fast and efficient stochastic optimization method (FESOM) as a more accessible variant of the stochastic optimization method introduced by Mishchenko et al. and benchmark the resulting spectra with those obtained by the… ▽ More The analytic continuation of imaginary-time quantum Monte Carlo data to extract real-frequency spectra remains a key problem in connecting theory with experiment. Here we present a fast and efficient stochastic optimization method (FESOM) as a more accessible variant of the stochastic optimization method introduced by Mishchenko et al. and benchmark the resulting spectra with those obtained by the standard Maximum Entropy method for three representative test cases, in- cluding data taken from studies of the two-dimensional Hubbard model. We generally find that our FESOM approach gives spectra similar to the Maximum Entropy results. In particular, while the Maximum Entropy method gives superior results when the quality of the data is strong, we find that FESOM is able to resolve fine structure with more detail when the quality of the data is poor. In addition, because of its stochastic nature, the method provides detailed information on the frequency dependent uncertainty of the resulting spectra, while the Maximum Entropy method does so only for the spectral weight integrated over a finite frequency region. We therefore believe that this variant of the stochastic optimization approach provides a viable alternative to the routinely used Maximum Entropy method especially for data with poor quality. △ Less

Submitted 8 September, 2016; originally announced September 2016.

Comments: 11 pages, 7 figures