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Nanoscale compositional evolution in complex oxide based resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin L. H. Mayes,
Rajesh Ramanathan,
Paul Guagliardo,
Vipul Bansal,
Madhu Bhaskaran,
J. Joshua Yang,
Sharath Sriram
Abstract:
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional ch…
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Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].
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Submitted 30 June, 2018;
originally announced July 2018.
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High order synaptic learning in neuro-mimicking resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin Mayes,
Rajesh Ramanathan,
Vipul Bansal,
Madhu Bhaskaran,
Sharath Sriram,
Omid Kavehei
Abstract:
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming proc…
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Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming process and complicated programming hardware are among the key challenges that hinder achieving biomimetic neuromorphic networks. Here, an electroforming-free and complementary metal oxide semiconductor (CMOS)-compatible memristor based on oxygen-deficient SrTiO$_{3-x}$ (STO$_x$) is reported to imitate synaptic learning rules. Through spectroscopic and cross-sectional transmission electron microscopic analyses, electroforming-free characteristics are attributed to the bandgap reduction of STO$_x$ by the formation of oxygen vacancies. The potential of such memristors to behave as artificial synapses is demonstrated by successfully implementing high order time- and rate-dependent synaptic learning rules. Also, a simple hybrid CMOS-memristor approach is presented to implement a variety of synaptic learning rules. Results are benchmarked against biological measurements form hippocampal and visual cortices with good agreement. This demonstration is a step towards the realization of large scale adaptive neuromorphic computation and networks.
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Submitted 18 April, 2018;
originally announced April 2018.
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Absence of Morphotropic Phase Boundary Effects in BiFeO3-PbTiO3 Thin Films Grown via a Chemical Multilayer Deposition Method
Authors:
Ashish Garg,
Shashaank Gupta,
Shuvrajyoti Bhattacharjee,
Dhananjai Pandey,
Vipul Bansal,
Suresh K Bhargava,
Ju Lin Peng
Abstract:
Here, we report the unusual behaviour shown by the (BiFeO3)1-x-(PbTiO3)x (BF-xPT) films prepared using a multilayer deposition approach by chemical solution deposition method. Thin film samples of various compositions were prepared by depositing several bilayers of BF and PT precursors by varying the BF or PT layer thicknesses. X-ray diffraction showed that final samples of all compositions show m…
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Here, we report the unusual behaviour shown by the (BiFeO3)1-x-(PbTiO3)x (BF-xPT) films prepared using a multilayer deposition approach by chemical solution deposition method. Thin film samples of various compositions were prepared by depositing several bilayers of BF and PT precursors by varying the BF or PT layer thicknesses. X-ray diffraction showed that final samples of all compositions show mixing of the two compounds resulting in a single phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk equilibrium compositions, our samples show a monoclinic (MA type) structure suggesting disappearance of morphotropic phase boundary (MPB) about x = 0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of remnant polarization at MPB as shown by the ferroelectric measurements. Magnetic measurements show that the magnetization of the samples increases with increasing BF content. Significant magnetization of the samples indicates melting of spin spirals in the BF-xPT arising from random distribution of iron atoms across the film. Absence of Fe2+ ions in the films was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that used thin film processing methodology significantly changes the structural evolution in contrast to predictions from the equilibrium phase diagram as well as modify the functional characteristics of BP-xPT system dramatically.
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Submitted 23 June, 2010;
originally announced June 2010.
