-
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Authors:
Sven C. Liebscher,
Lars C. Bannow,
Jörg Hader,
Jerome V. Moloney,
Stephan W. Koch
Abstract:
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute t…
▽ More
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute the interaction matrix elements that serve as input to microscopic calculations of the optical properties and intrinsic losses relevant for optoelectronic applications of dilute bismides.
△ Less
Submitted 11 August, 2020;
originally announced August 2020.
-
Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system
Authors:
Lars C. Bannow,
Jörg Hader,
Jerome V. Moloney,
Stephan W. Koch
Abstract:
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results s…
▽ More
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results serve as input for a many-body quantum approach used to compute the absorption, photoluminescence, and the optical and Auger losses for a wide range of application conditions. To illustrate the theory, the excitonic properties of the material system are investigated and numerical results are presented for typical photo-voltaic operation conditions and for the elevated carrier densities needed for laser operation.
△ Less
Submitted 26 October, 2018;
originally announced October 2018.
-
Valence band splitting in bulk dilute bismides
Authors:
Lars C. Bannow,
Stefan C. Badescu,
Jörg Hader,
Jerome V. Moloney,
Stephan W. Koch
Abstract:
The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on…
▽ More
The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on the local arrangement of the Bi atoms but not on the uni-directional lattice constant of the supercell. The additional influence of external strain due to epitaxial growth on GaAs substrates is studied by fixing the in-plane lattice constants.
△ Less
Submitted 28 September, 2017;
originally announced September 2017.
-
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Authors:
Phil Rosenow,
Lars C. Bannow,
Eric W. Fischer,
Wolfgang Stolz,
Kerstin Volz,
Stephan W. Koch,
Ralf Tonner
Abstract:
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calcul…
▽ More
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calculations based on the meta-GGA functional presented by Tran and Blaha (TB09) with a supercell approach for the dilute nitride Ga(NAs). Exploring the requirements posed to supercells, we show that the distortion field of a single N atom must be allowed to decrease so far, that it does not overlap with its periodic images. This also prevents spurious electronic interactions between translational symmetric atoms, allowing to compute band gaps in very good agreement with experimentally derived reference values. These results open up the field of dilute nitride compound semiconductors to predictive ab initio calculations.
△ Less
Submitted 30 May, 2017;
originally announced May 2017.
-
An ab initio based approach to optical properties of semiconductor heterostructures
Authors:
L. C. Bannow,
P. Rosenow,
P. Springer,
E. W. Fischer,
J. Hader,
J. V. Moloney,
R. Tonner,
S. W. Koch
Abstract:
A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function…
▽ More
A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the kp-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As quantum well system with varying phosphide content in the active layer.
△ Less
Submitted 4 April, 2017;
originally announced April 2017.
-
Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
Authors:
Lars C. Bannow,
Oleg Rubel,
Phil Rosenow,
Stefan C. Badescu,
Jorg Hader,
Jerome V. Moloney,
Ralf Tonner,
Stephan W. Koch
Abstract:
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This de…
▽ More
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.
△ Less
Submitted 5 February, 2016;
originally announced February 2016.
