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Showing 1–6 of 6 results for author: Bannow, L C

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  1. arXiv:2008.04771  [pdf, other

    cond-mat.mtrl-sci

    Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors

    Authors: Sven C. Liebscher, Lars C. Bannow, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

    Abstract: The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute t… ▽ More

    Submitted 11 August, 2020; originally announced August 2020.

  2. arXiv:1810.11225  [pdf, other

    cond-mat.mtrl-sci

    Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system

    Authors: Lars C. Bannow, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

    Abstract: For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results s… ▽ More

    Submitted 26 October, 2018; originally announced October 2018.

    Comments: 6 pages, 5 figures

  3. arXiv:1709.09983  [pdf, ps, other

    cond-mat.mtrl-sci

    Valence band splitting in bulk dilute bismides

    Authors: Lars C. Bannow, Stefan C. Badescu, Jörg Hader, Jerome V. Moloney, Stephan W. Koch

    Abstract: The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on… ▽ More

    Submitted 28 September, 2017; originally announced September 2017.

    Journal ref: Appl. Phys. Lett. 111, 182103 (2017)

  4. Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides

    Authors: Phil Rosenow, Lars C. Bannow, Eric W. Fischer, Wolfgang Stolz, Kerstin Volz, Stephan W. Koch, Ralf Tonner

    Abstract: While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calcul… ▽ More

    Submitted 30 May, 2017; originally announced May 2017.

    Comments: 17 pages, 4 figures

    Journal ref: Phys. Rev. B 97, 075201 (2018)

  5. arXiv:1704.00983  [pdf, other

    cond-mat.mtrl-sci

    An ab initio based approach to optical properties of semiconductor heterostructures

    Authors: L. C. Bannow, P. Rosenow, P. Springer, E. W. Fischer, J. Hader, J. V. Moloney, R. Tonner, S. W. Koch

    Abstract: A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function… ▽ More

    Submitted 4 April, 2017; originally announced April 2017.

    Journal ref: Modelling Simul. Mater. Sci. Eng. 25, 065001 (2017)

  6. Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

    Authors: Lars C. Bannow, Oleg Rubel, Phil Rosenow, Stefan C. Badescu, Jorg Hader, Jerome V. Moloney, Ralf Tonner, Stephan W. Koch

    Abstract: Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This de… ▽ More

    Submitted 5 February, 2016; originally announced February 2016.

    Comments: 22 pages, 10 Figures

    Journal ref: Phys. Rev. B 93, 205202 (2016)