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Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
Authors:
Hunter B. Banks,
Oney O. Soykal,
Rachael Myers-Ward,
D. Kurt Gaskill,
T. L. Reinecke,
Samuel G. Carter
Abstract:
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature optical properties that are essential for optical readout and coherent control of its spin and for the development of a spin-photon interface. The common features…
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The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature optical properties that are essential for optical readout and coherent control of its spin and for the development of a spin-photon interface. The common features among individual defects include two narrow, nearly lifetime-limited optical transitions that correspond to $m_s{=}\pm 3/2$ and $m_s{=}\pm 1/2$ spin states with no discernable zero-field splitting fluctuations. Initialization and readout of the spin states is characterized by time-resolved optical spectroscopy under resonant excitation of these transitions, showing significant differences between the $\pm 3/2$ and $\pm 1/2$ spin states. These results are well-described by a theoretical model that strengthens our understanding of the quantum properties of this defect.
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Submitted 11 January, 2019; v1 submitted 3 November, 2018;
originally announced November 2018.
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Dynamical birefringence: Electron-hole recollisions as probes of Berry curvature
Authors:
Hunter B. Banks,
Qile Wu,
Darren C. Valovcin,
Shawn Mack,
Arthur C. Gossard,
Loren Pfeiffer,
Ren-Bao Liu,
Mark S. Sherwin
Abstract:
The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately aff…
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The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately affected by Berry phases. Electron-hole recollisions and HSG occur when a near-band gap laser beam excites a semiconductor that is driven by sufficiently strong terahertz (THz)-frequency electric fields. We carried out experimental and theoretical studies of HSG from three GaAs/AlGaAs quantum wells. The observed HSG spectra contain sidebands up to the 90th order, to our knowledge the highest-order optical nonlinearity observed in solids. The highest-order sidebands are associated with electron-hole pairs driven coherently across roughly 10% of the Brillouin zone around the Γpoint. The principal experimental claim is a dynamical birefringence: the sidebands, when the order is high enough (> 20), are usually stronger when the exciting near-infrared (NIR) and the THz electric fields are polarized perpendicular than parallel; the sideband intensities depend on the angles between the THz field and the crystal axes in samples with sufficiently weak quenched disorder; and the sidebands exhibit significant ellipticity that increases with increasing sideband order, despite nearly linear excitation and driving fields. We explain dynamical birefringence by generalizing the three-step model for high order harmonic generation. The hole accumulates Berry phases due to variation of its internal state as the quasi-momentum changes under the THz field. Dynamical birefringence arises from quantum interference between time-reversed pairs of electron-hole recollision pathways.
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Submitted 12 October, 2017; v1 submitted 26 June, 2017;
originally announced June 2017.
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Anomalous He-Gas High-Pressure Studies on Superconducting LaO1-xFxFeAs
Authors:
W. Bi,
H. B. Banks,
J. S. Schilling,
H. Takahashi,
H. Okada,
Y. Kamihara,
M. Hirano,
H. Hosono
Abstract:
AC susceptibility measurements have been carried out on superconducting LaO1-xFxFeAs for x=0.07 and 0.14 under He-gas pressures to about 0.8 GPa. Not only do the measured values of dTc/dP differ substantially from those obtained in previous studies using other pressure media, but the Tc(P) dependences observed depend on the detailed pressure/temperature history of the sample. A sizeable sensitiv…
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AC susceptibility measurements have been carried out on superconducting LaO1-xFxFeAs for x=0.07 and 0.14 under He-gas pressures to about 0.8 GPa. Not only do the measured values of dTc/dP differ substantially from those obtained in previous studies using other pressure media, but the Tc(P) dependences observed depend on the detailed pressure/temperature history of the sample. A sizeable sensitivity of Tc(P) to shear stresses provides a possible explanation.
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Submitted 27 November, 2009;
originally announced November 2009.
