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Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Authors:
M. Tiberi,
A. Montanaro,
C. Wen,
J. Zhang,
O. Balci,
S. M. Shinde,
S. Sharma,
A. Meersha,
H. Shekhar,
J. E. Muench,
B. R. Conran,
K. B. K. Teo,
M. Ebert,
X. Yan,
Y. Tran,
M. Banakar,
C. Littlejohns,
G. T. Reed,
M. Romagnoli,
A. Ruocco,
V. Sorianello,
A. C. Ferrari
Abstract:
The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth an…
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The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI
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Submitted 3 June, 2025;
originally announced June 2025.
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Ultracompact programmable silicon photonics using layers of low-loss phase-change material Sb$_2$Se$_3$ of increasing thickness
Authors:
Sophie Blundell,
Thomas Radford,
Idris A. Ajia,
Daniel Lawson,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Ioannis Zeimpekis,
Otto L. Muskens
Abstract:
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials (PCMs) offer a promising route towards non-volatile free-form control of light. Here, we exploit direct-write digital patterning of waveguides using layers of the…
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High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials (PCMs) offer a promising route towards non-volatile free-form control of light. Here, we exploit direct-write digital patterning of waveguides using layers of the PCM Sb$_2$Se$_3$ with a thickness of up to 100 nm, demonstrating the ability to strongly increase the effect per pixel compared to previous implementations where much thinner PCM layers were used. We exploit the excellent refractive index matching between Sb$_2$Se$_3$ and silicon to achieve a low-loss hybrid platform for programmable photonics. A five-fold reduction in modulation length of a Mach-Zehnder interferometer is achieved compared to previous work using thin-film Sb$_2$Se$_3$ devices, decreased to 5 $μ$m in this work. Application of the thicker PCM layers in direct-write digital programming of a multimode interferometer (MMI) shows a three-fold reduction of the number of programmed pixels to below 10 pixels per device. The demonstrated scaling of performance with PCM layer thickness is important for establishing the optimum working range for hybrid silicon-PCM devices and holds promise for achieving ultracompact programmable photonic circuits.
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Submitted 19 September, 2024;
originally announced September 2024.
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Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material
Authors:
Matthew Delaney,
Ioannis Zeimpekis,
Han Du,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Daniel W. Hewak,
Otto L. Muskens
Abstract:
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the…
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Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$π$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
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Submitted 10 January, 2021;
originally announced January 2021.
