-
Electronic structure of the Ge/Si(105) hetero-interface
Authors:
Polina M. Sheverdyaeva,
Conor Hogan,
Anna Sgarlata,
Laura Fazi,
Massimo Fanfoni,
Luca Persichetti,
Paolo Moras,
Adalberto Balzarotti
Abstract:
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge monolayers angle-resolved photoemission spectroscopy reveals the presence of two-dimensional surface and film bands displaying energy-momentum dispersion compatible w…
▽ More
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge monolayers angle-resolved photoemission spectroscopy reveals the presence of two-dimensional surface and film bands displaying energy-momentum dispersion compatible with the 5x4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.
△ Less
Submitted 4 July, 2023;
originally announced July 2023.
-
Hug-like island growth of Ge on strained vicinal Si(111) surfaces
Authors:
L. Persichetti,
R. Menditto,
A. Sgarlata,
M. Fanfoni,
A. Balzarotti
Abstract:
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a…
▽ More
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.
△ Less
Submitted 27 August, 2011;
originally announced August 2011.
-
Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface
Authors:
L. Persichetti,
A. Sgarlata,
M. Fanfoni,
A. Balzarotti
Abstract:
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of sever…
▽ More
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.
△ Less
Submitted 28 May, 2010;
originally announced May 2010.
-
Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy
Authors:
A. Balzarotti
Abstract:
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the singl…
▽ More
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the single-dot mean volume of the large QDs increases by Ostwald ripening. The kinetics of growth involves conversion of quasi-3D to 3D QDs at a rate determined by superstress and participation of the wetting layer adatoms. The data analysis excludes that quasi-3D QDs are extrinsic surface features due to inefficient cooling after growth.
△ Less
Submitted 18 July, 2008;
originally announced July 2008.
-
Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)
Authors:
M. Fanfoni,
E. Placidi,
F. Arciprete,
E. Orsini,
F. Patella,
A. Balzarotti
Abstract:
Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 55 (1995)]. Their theory is centered on the concept of capture zone properly identified by Voronoi cell. Here we substantiate experimentally their theory by studying the scale invariance of InAs quantum dots (QDs) formi…
▽ More
Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 55 (1995)]. Their theory is centered on the concept of capture zone properly identified by Voronoi cell. Here we substantiate experimentally their theory by studying the scale invariance of InAs quantum dots (QDs) forming on GaAs(001) substrate. In particular, we show that the volume distributions of QDs well overlap the corrisponding experimental distributions of the Voronoi-cell areas. The interplay between the experimental data and the numerical simulations allowed us to determine the spatial correlation length among QDs.
△ Less
Submitted 4 October, 2006;
originally announced October 2006.
-
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)
Authors:
F. Arciprete,
E. Placidi,
V. Sessi,
M. Fanfoni,
F. Patella,
A. Balzarotti
Abstract:
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by dif…
▽ More
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by different mechanisms of aggregation, involving the change of the critical nucleus size. Remarkably, the small ones give rise to a wealth of "monomers" through the erosion of the step edges, favoring the explosive nucleation of the large ones.
△ Less
Submitted 13 October, 2005;
originally announced October 2005.
-
W=0 pairing in Hubbard and related models of low-dimensional superconductors
Authors:
Adalberto Balzarotti,
Michele Cini,
Enrico Perfetto,
Gianluca Stefanucci
Abstract:
Lattice Hamiltonians with on-site interaction $W$ have W=0 solutions, that is, many-body {\em singlet} eigenstates without double occupation. In particular, W=0 pairs give a clue to understand the pairing force in repulsive Hubbard models. These eigenstates are found in systems with high enough symmetry, like the square, hexagonal or triangular lattices. By a general theorem, we propose a system…
▽ More
Lattice Hamiltonians with on-site interaction $W$ have W=0 solutions, that is, many-body {\em singlet} eigenstates without double occupation. In particular, W=0 pairs give a clue to understand the pairing force in repulsive Hubbard models. These eigenstates are found in systems with high enough symmetry, like the square, hexagonal or triangular lattices. By a general theorem, we propose a systematic way to construct all the W=0 pairs of a given Hamiltonian. We also introduce a canonical transformation to calculate the effective interaction between the particles of such pairs. In geometries appropriate for the CuO$_{2}$ planes of cuprate superconductors, armchair Carbon nanotubes or Cobalt Oxides planes, the dressed pair becomes a bound state in a physically relevant range of parameters. We also show that W=0 pairs quantize the magnetic flux like superconducting pairs do. The pairing mechanism breaks down in the presence of strong distortions. The W=0 pairs are also the building blocks for the antiferromagnetic ground state of the half-filled Hubbard model at weak coupling. Our analytical results for the $4\times 4$ Hubbard square lattice, compared to available numerical data, demonstrate that the method, besides providing intuitive grasp on pairing, also has quantitative predictive power. We also consider including phonon effects in this scenario. Preliminary calculations with small clusters indicate that vector phonons hinder pairing while half-breathing modes are synergic with the W=0 pairing mechanism both at weak coupling and in the polaronic regime.
△ Less
Submitted 4 November, 2004;
originally announced November 2004.
-
Canonical Transformation of the Hubbard Model and W=0 Pairing: Comparison with Exact Diagonalization Results
Authors:
Michele Cini,
Adalberto Balzarotti,
Raffaella Brunetti,
Maria Gimelli,
Gianluca Stefanucci
Abstract:
We have recently developed a canonical transformation of the Hubbard and related models, valid for systems of arbitrary size and for the full plane; this is particularly suited to study hole pairing. In this work we show that exact diagonalization results of the one band Hubbard model for small clusters with periodic boundary conditions agree well with the analytical ones obtained by means of ou…
▽ More
We have recently developed a canonical transformation of the Hubbard and related models, valid for systems of arbitrary size and for the full plane; this is particularly suited to study hole pairing. In this work we show that exact diagonalization results of the one band Hubbard model for small clusters with periodic boundary conditions agree well with the analytical ones obtained by means of our canonical transformation. In the presence of a pairing instability, the analytic approach allows us to identify the Cooper pairs. They are W=0 pairs, that is, singlet two-hole eigenstates of the Hubbard Hamiltonian with vanishing on-site repulsion. Indeed, we find that the Coulomb interaction effects on W=0 pairs are dynamically small, and repulsive or attractive, depending on the filling.
△ Less
Submitted 15 May, 2000;
originally announced May 2000.
-
Pairing in the Hubbard model: the Cu_{5}O_{4} Cluster versus the Cu-O plane
Authors:
Michele Cini,
Adalberto Balzarotti,
Gianluca Stefanucci
Abstract:
We study the Cu_{5}O_{4} cluster by exact diagonalization of a three-band Hubbard model and show that bound electron or hole pairs are obtained at appropriate fillings, and produce superconducting flux quantisation.
The results extend earlier cluster studies and illustrate a canonical transformation approach to pairing that we have developed recently for the full plane. The quasiparticles that…
▽ More
We study the Cu_{5}O_{4} cluster by exact diagonalization of a three-band Hubbard model and show that bound electron or hole pairs are obtained at appropriate fillings, and produce superconducting flux quantisation.
The results extend earlier cluster studies and illustrate a canonical transformation approach to pairing that we have developed recently for the full plane. The quasiparticles that in the many-body problem behave like Cooper pairs are W=0 pairs, that is, two-hole eigenstates of the Hubbard Hamiltonian with vanishing on-site repulsion. The cluster allows W=0 pairs of d symmetry, due to a spin fluctuation, and s symmetry, due to a charge fluctuation. Flux quantisation is shown to be a manifestation of symmetry properties that hold for clusters of arbitrary size.
△ Less
Submitted 23 July, 1999; v1 submitted 19 May, 1999;
originally announced May 1999.
-
Charge Conjugation and Pairing in a model Cu$_{5}$O$_{4}$ Cluster
Authors:
Michele Cini,
Adalberto Balzarotti,
Gianluca Stefanucci
Abstract:
Highly-symmetric three-band Hubbard Cu-O clusters have peculiar properties when the hole number is such that they admit W=0 hole pairs. These are two-hole eigenstates of the on-site Hubbard repulsion with eigenvalue 0, get bound by correlation effects when dressed by the interaction with the background, and cause superconducting flux quantization. We study the Cu$_{5}$O$_{4}$ cluster by exact di…
▽ More
Highly-symmetric three-band Hubbard Cu-O clusters have peculiar properties when the hole number is such that they admit W=0 hole pairs. These are two-hole eigenstates of the on-site Hubbard repulsion with eigenvalue 0, get bound by correlation effects when dressed by the interaction with the background, and cause superconducting flux quantization. We study the Cu$_{5}$O$_{4}$ cluster by exact diagonalization and show that bound electron pairs of $^{1}$% B$_{2}$ symmetry are obtained at an appropriate filling, and quantize flux like the hole pairs. The basic mechanism for pairing in this model is the second-order exchange diagram, and an approximate charge conjugation symmetry holds between electron and hole pairs. Further, the flux quantization property requires that the W=0 pairs of $d$ symmetry have $s$ symmetry couterparts, still with W=0; the former are due to a spin fluctuation, while the latter arise from a charge fluctuation mechanism. The simultaneous existence of both is an essential property of our model and is required for any model of superconducting $d$ pairs.
△ Less
Submitted 9 November, 1998;
originally announced November 1998.
-
Canonical Transformation of the Three-Band Hubbard Model and Hole Pairing
Authors:
Michele Cini,
Gianluca Stefanucci,
Adalberto Balzarotti
Abstract:
We propose a canonical tranformation approach to the effective interaction $W_{eff}$ between two holes, based on the three-band Hubbard model but ready to include extra interactions as well. An effective two-body Hamiltonian can in principle be obtained including any kind of virtual intermediate states. We derive the closed-form analytic expression of the effective interaction including 4-body v…
▽ More
We propose a canonical tranformation approach to the effective interaction $W_{eff}$ between two holes, based on the three-band Hubbard model but ready to include extra interactions as well. An effective two-body Hamiltonian can in principle be obtained including any kind of virtual intermediate states. We derive the closed-form analytic expression of the effective interaction including 4-body virtual states, describing the exchange of an electron-hole pair to all orders. The resulting integral equation, valid for the full plane, leads to a Cooper-like instability of the Fermi liquid. The two-hole bound states generalize those reported earlier in cluster calculations by exact diagonalisation methods.
△ Less
Submitted 14 October, 1998;
originally announced October 1998.
-
Theory of pairing in the Cu-O Plane: Three-Band Hubbard Model and Beyond
Authors:
Michele Cini,
Gianluca Stefanucci,
Adalberto Balzarotti
Abstract:
We calculate the effective interaction $W_{eff}$ between two holes added to the ground state of the repulsive three-band Hubbard model. To make contact with Cooper theory and with earlier Hubbard model cluster studies, we first use a perturbative canonical transformation, to generate a two-body Hamiltonian. Then, we extend the results to all orders. The approach is exact in principle, and we obt…
▽ More
We calculate the effective interaction $W_{eff}$ between two holes added to the ground state of the repulsive three-band Hubbard model. To make contact with Cooper theory and with earlier Hubbard model cluster studies, we first use a perturbative canonical transformation, to generate a two-body Hamiltonian. Then, we extend the results to all orders. The approach is exact in principle, and we obtain a close analytic expression including explicitly the effects of all virtual transitions to 4-body intermediate states. Our scheme naturally lends itself to embody off-site, inter-planar, phonon-mediated and other interactions which are not considered in the Hubbard model but may well be important. The result depends qualitatively on the symmetry of the two-hole state: $^{1}B_{2}$ and $ ^{1}A_{2}$ pairs are special, because the bare holes do not interact by the on-site repulsion (W=0 pairs). The effective interaction in these channels is attractive and leads to a Cooper-like instability of the Fermi liquid; however $W_{eff}$ is repulsive for Triplet pairs. Bound two-hole states of the same nature were reported earlier in small cluster calculations by exact diagonalisation methods; only symmetric clusters are good models of the plane. Once $W_{eff}$ is known, the pair eigenfunction is determined by an integral equation. We present numerical estimates of the binding energy $|Δ|$ of the pairs, which is in the physically interesting range of tens of meV if unscreened on-site repulsion parameters are used.
△ Less
Submitted 21 September, 1998;
originally announced September 1998.
-
Pairing in the Three-Band Hubbard Model of the Cu-O Plane
Authors:
Michele Cini,
Gianluca Stefanucci,
Adalberto Balzarotti
Abstract:
By a canonical transformation of the three-band Hubbard model, we introduce an effective Hamiltonian for the propagation of two holes doped into the ground state of the Cu-O plane. When the pair belongs to the $^{1}B_{2}$ or $% ^{1}A_{2}$ Irreducible Representations of the C$_{4v}$ Group, the bare holes do not interact by the on-site repulsion; the effective interaction between the dressed holes…
▽ More
By a canonical transformation of the three-band Hubbard model, we introduce an effective Hamiltonian for the propagation of two holes doped into the ground state of the Cu-O plane. When the pair belongs to the $^{1}B_{2}$ or $% ^{1}A_{2}$ Irreducible Representations of the C$_{4v}$ Group, the bare holes do not interact by the on-site repulsion; the effective interaction between the dressed holes is obtained analytically in terms of renormalized matrix elements, and generalizes earlier findings from cluster calculations. The Fermi liquid is unstable and numerical estimates with reasonable parameters of the binding energy of the pair are in the range of tens of meV. Our scheme naturally lends itself to embody phonon-mediated and other interactions which cannot occur in the Hubbard model but may give important contributions.
△ Less
Submitted 26 August, 1998; v1 submitted 19 August, 1998;
originally announced August 1998.
