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Radiation resistance in simulated metallic core-shell nanoparticles
Authors:
D. R. Tramontina,
O. R. Deluigi,
R. Pinzon,
J. Rojas-Nuñez,
F. J. Valencia,
R. C. Pasianot,
S. E. Baltazar,
R. I. Gonzalez,
E. M. Bringa
Abstract:
We present molecular dynamics (MD) simulations of radiation damage in pure Fe nanoparticles (NP) and bimetallic FeCu core-shell nanoparticles (CSNP). The CSNP includes a perfect body centered cubic (bcc) Fe core coated with a face-centered cubic (fcc) Cu shell. Irradiation with Fe Primary Knock-on Atoms (PKA) with energies between 1 and 7 keV leads to point defects, without clustering beyond divac…
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We present molecular dynamics (MD) simulations of radiation damage in pure Fe nanoparticles (NP) and bimetallic FeCu core-shell nanoparticles (CSNP). The CSNP includes a perfect body centered cubic (bcc) Fe core coated with a face-centered cubic (fcc) Cu shell. Irradiation with Fe Primary Knock-on Atoms (PKA) with energies between 1 and 7 keV leads to point defects, without clustering beyond divacancies and very few slightly larger vacancy clusters, and without interstitial clusters, unlike what happens in bulk at the same PKA energies. The Fe-Cu interface and shell can act as a defect sink, absorbing radiation-induced damage and, therefore, the final number of defects in the Fe core is significantly lower than in the Fe NP. In addition, the Cu shell substantially diminishes the number of sputtered Fe atoms, acting as a barrier for recoil ejection. Structurally, the Cu shell responds to the stress generated by the collision cascade by creating and destroying stacking faults across the shell width, which could also accommodate further irradiation defects. Sputtering yield (Y) is underestimated by BCA, which is also expected since the simulation is for a thin film at normal incidence. We also compare MD defect production to bulk predictions of the analytic Athermal Recombination Corrected Displacements Per Atom (arc-dpa) model. The number of vacancies in the Fe core is only slightly lower than arc-dpa predictions, but the number of interstitials is reduced by about one order of magnitude compared to vacancies, at 5 keV. According to the radiation resistance found for FeCu CSNP in our simulations, this class of nanomaterial could be suitable for developing new radiation resistant coatings, nanostructured components, and shields for use in extreme environments, for instance, in nuclear energy and astrophysical applications.
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Submitted 8 September, 2022; v1 submitted 17 June, 2022;
originally announced June 2022.
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Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks
Authors:
S. Huant,
S. Baltazar,
P. Liu,
H. Sellier,
B. Hackens,
F. Martins,
V. Bayot,
X. Wallart,
L. Desplanque,
M. G. Pala
Abstract:
By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here…
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By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.
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Submitted 6 December, 2013;
originally announced December 2013.
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Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox
Authors:
M. G. Pala,
S. Baltazar,
P. Liu,
H. Sellier,
B. Hackens,
F. Martins,
V. Bayot,
X. Wallart,
L. Desplanque,
S. Huant
Abstract:
We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A sc…
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We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.
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Submitted 10 January, 2012; v1 submitted 6 December, 2011;
originally announced December 2011.
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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
Authors:
Hermann Sellier,
Benoit Hackens,
Marco Pala,
Frederico Martins,
Samuel Baltazar,
Xavier Wallart,
Ludovic Desplanque,
Vincent Bayot,
Serge Huant
Abstract:
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings…
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This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.
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Submitted 11 April, 2011;
originally announced April 2011.
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Scanning-gate microscopy of semiconductor nanostructures: an overview
Authors:
F. Martins,
B. Hackens,
H. Sellier,
P. Liu,
M. G. Pala,
S. Baltazar,
L. Desplanque,
X. Wallart,
V. Bayot,
S. Huant
Abstract:
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs…
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This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.
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Submitted 19 October, 2010;
originally announced October 2010.
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Negative differential resistance of Styrene on an ideal Si[111] surface: dependence of the I-V characteristics on geometry, surface doping and shape of the STM-tip
Authors:
Samuel E. Baltazar,
Mario De Menech,
Ulf Saalmann,
Aldo H. Romero,
Martin E. Garcia
Abstract:
We study the electron transport properties through a supported organic molecule styrene (C8H8) on an ideal silicon surface Si[111] and probed by a STM-tip. The I-V characteristics and the differential conductance of the molecule are calculated using a self consistent approach based on non equilibrium Green's functions. Two different adsorption configurations for the molecule on the surface were…
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We study the electron transport properties through a supported organic molecule styrene (C8H8) on an ideal silicon surface Si[111] and probed by a STM-tip. The I-V characteristics and the differential conductance of the molecule are calculated using a self consistent approach based on non equilibrium Green's functions. Two different adsorption configurations for the molecule on the surface were considered which corresponds to a global and a local minimum of the total energy. In both cases we find a negative differential resistance (NDR) in a given interval of bias voltages. This effect is controlled by the states available close to the Fermi level of the surface and can be manipulated by properly doping the substrate. We also analyze the influence of the tip-shape on the I-V characteristics.
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Submitted 21 August, 2007;
originally announced August 2007.
