Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation
Authors:
Y. C. Balas,
X. Zhou,
E. Cherotchenko,
I. Kuznetsov,
S. K. Rajendran,
G. G. Paschos,
A. V. Trifonov,
A. Nalitov,
H. Ohadi,
P. G. Savvidis
Abstract:
We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{μm}$ and a three-dimensional mode volume of…
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We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{μm}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{μm^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.
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Submitted 1 July, 2025; v1 submitted 27 June, 2025;
originally announced June 2025.
