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Experimental detection of topological electronic state and large linear magnetoresistance in $SrSn_{4}$ superconductor
Authors:
Arnab Kumar Pariari,
Rajesh O Sharma,
Mohammad Balal,
Markus Hücker,
Tanmoy Das,
Sudipta Roy Barman
Abstract:
While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrSn_{4}$ is…
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While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrSn_{4}$ is known for exhibiting unusual superconductivity below the transition temperature ($T_{C}$) of 4.8 K. Recent theory predicts a topological electronic state in this compound, which is yet to be confirmed by experiments. Systematic and detailed studies of the magnetotransport properties of $SrSn_{4}$ and its Fermi surface characterizations are also absent. For the first time, a quantum oscillation study reveals a nontrivial $π$ Berry phase, very light effective mass, and high quantum mobility of charge carriers in $SrSn_{4}$. Magnetotransport experiment unveils large linear transverse magnetoresistance (TMR) of more than 1200% at 5 K and 14 T. Angle-dependent transport experiments detect anisotropic and four-fold symmetric TMR, with the maximum value ($\sim$ 2000%) occurring when the angle between the magnetic field and the crystallographic b-axis is 45 degree. Our results suggest that $SrSn_{4}$ is the first topological material with superconductivity above the boiling point of helium that displays such high magnetoresistance.
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Submitted 13 October, 2024;
originally announced October 2024.
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Intrinsic and extrinsic plasmons in the hard x-ray photoelectron spectra of nearly free electron metals
Authors:
Mohammad Balal,
Shuvam Sarkar,
Pramod Bhakuni,
Andrei Gloskovskii,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
Collective plasmon excitations in solids that result from the process of photoemission are an important area of fundamental research. In this study, we identify a significant number ($n$) of multiple bulk plasmons ($nω_p$) in the hard x-ray photoelectron spectra of the core levels and valence bands (VBs) of two well-known, nearly free electron metals, aluminum (Al) and magnesium (Mg). On the basis…
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Collective plasmon excitations in solids that result from the process of photoemission are an important area of fundamental research. In this study, we identify a significant number ($n$) of multiple bulk plasmons ($nω_p$) in the hard x-ray photoelectron spectra of the core levels and valence bands (VBs) of two well-known, nearly free electron metals, aluminum (Al) and magnesium (Mg). On the basis of earlier theoretical works, we estimate the contributions of extrinsic, intrinsic, and interference processes to the intensities of 1$s$ to 2$s$ core level plasmons. The intrinsic contribution diminishes from 22% for 1$ω_p$, to 4.4% for 2$ω_p$, and becomes negligible thereafter (0.5% for 3$ω_p$). The extrinsic and intrinsic plasmon contributions do not vary significantly across a broad range of photoelectron kinetic energies, and also between the two metals (Al and Mg). The interference contribution varies from negative to zero as $n$ increases. An asymmetric line shape is observed for the bulk plasmons, which is most pronounced for 1$ω_p$. Signature of the surface plasmon is detected in normal emission, and it exhibits a significantly increased intensity in the grazing emission. The VB spectra of Al and Mg, which are dominated by $s$-like states, exhibit excellent agreement with the calculated VB based on density functional theory. The VB exhibits four multiple bulk plasmon peaks in the loss region, which are influenced by an intrinsic process in addition to the extrinsic process. On a completely oxidized aluminum surface, the relative intensity of the Al metal bulk plasmon remains nearly unaltered, while the surface plasmon is completely attenuated.
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Submitted 25 April, 2024;
originally announced April 2024.
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Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer
Authors:
Sajal Barman,
Pramod Bhakuni,
Shuvam Sarkar,
Joydipto Bhattacharya,
Mohammad Balal,
Mrinal Manna,
Soumen Giri,
Arnab Pariari,
Tomáš Skála,
Markus Huecker,
Rajib Batabyal,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with densi…
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Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with density functional theory (DFT), reveals stanene related bands such as two hole-like bands and an inverted parabolic band around the $\overlineΓ$ point. An outer hole-like band traverses the Fermi level (\ef) and gives rise to a hexagonal Fermi surface, showing that stanene on MBST is metallic. In contrast, a bandgap of 0.8 eV is observed at the $\overline{K}$ point. We find that DFT shows good agreement with ARPES only when the BL and hydrogen passivation of the top Sn layer are considered in the calculation. Scanning tunneling microscopy (STM) establishes the honeycomb buckled structure of stanene. A stanene-related component is also detected in the Sn $d$ core level spectra, in addition to a BL-related component. The BL, which forms because of the chemical bonding between Sn and the top two layers of MBST, has an ordered crystal lattice with random anti-site defects. The composition of the BL is estimated to be Sn:Te:Bi/Sb $\approx$ 2:1:1 from x-ray photoelectron spectroscopy. Low energy electron diffraction shows that the lattice constant of stanene is marginally larger than that of MBST, and the STM result aligns with this. The BL bridges this disparity and provides a platform for stanene growth.
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Submitted 8 September, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
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The role of substrates and environment in piezoresponse force microscopy: A case study with regular glass slides
Authors:
Shilpa Sanwlani,
Mohammad Balal,
Shubhra Jyotsna,
Goutam Sheet
Abstract:
Piezoresponse force microscopy (PFM) is a powerful tool for probing nanometer-scale ferroelectric and piezoelectric properties. Hysteretic switching of the phase and amplitude of the PFM response are believed to be the hallmark of ferroelectric and piezoelectric behavior respectively. However, the application of PFM is limited by the fact that similar hysteretic effects may also arise from mechani…
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Piezoresponse force microscopy (PFM) is a powerful tool for probing nanometer-scale ferroelectric and piezoelectric properties. Hysteretic switching of the phase and amplitude of the PFM response are believed to be the hallmark of ferroelectric and piezoelectric behavior respectively. However, the application of PFM is limited by the fact that similar hysteretic effects may also arise from mechanisms not related to ferroelectricity or piezoelectricity. In this paper we report our studies on regular glass slides that show ferroelectric-like signal without being ferroelectric and frequently used as a substrate in PFM experiments. We demonstrate how the substrates and other environmental factors like relative humidity and experimental conditions may influence the PFM results on novel materials.
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Submitted 3 October, 2016;
originally announced October 2016.
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Electrical domain writing and nanoscale potential modulation on LaVO$_3$/SrTiO$_3$
Authors:
Mohammad Balal,
Shilpa Sanwlani,
Neha Wadehra,
Suvankar Chakraverty,
Goutam Sheet
Abstract:
The high-mobility 2DEGs formed at the interfaces between certain insulating perovskite oxides have been known to be a novel playground of exotic physical orders like, superconductivity and ferromagnetism and their inter-coupling. There have been efforts to accomplish even more exotic properties at such interfaces of oxide heterostructures through nano-structuring of the surface. In this paper we r…
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The high-mobility 2DEGs formed at the interfaces between certain insulating perovskite oxides have been known to be a novel playground of exotic physical orders like, superconductivity and ferromagnetism and their inter-coupling. There have been efforts to accomplish even more exotic properties at such interfaces of oxide heterostructures through nano-structuring of the surface. In this paper we report writing and erasing charge domains on such an oxide heterostructure LaVO$_3$/SrTiO$_3$ using a conductive AFM cantilever. We have patterned these domains in a periodic fashion in order to create artificial lattices on the surface. Through kelvin probe microscopy, electrostatic force microscopy and conductivity mapping of such artificial lattices we found that the domains not only trap charge carriers but also develop a controllable potential landscape on the surface which coincides with a modulation of local electrical conductivity. The ability to pattern such nanostructures reversibly offers unprecedented opportunities of realizing ultra-high storage density devices in high mobility oxide heterostructures.
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Submitted 29 September, 2016;
originally announced September 2016.
