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Two-Electron Spin Correlations in Precision Placed Donors in Silicon
Authors:
M. A. Broome,
S. K. Gorman,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
C. D. Hill,
T. F. Watson,
W. J. Baker,
L. C. L. Hollenberg,
M. Y. Simmons
Abstract:
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means…
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Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
Authors:
S. K. Gorman,
M. A. Broome,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
T. F. Watson,
W. J. Baker,
M. Y. Simmons
Abstract:
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s…
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We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T.
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Submitted 26 July, 2018;
originally announced July 2018.
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Mapping the Chemical Potential Landscape of a Triple Quantum Dot
Authors:
M. A. Broome,
S. K. Gorman,
J. G. Keizer,
T. F. Watson,
S. J. Hile,
W. J. Baker,
M. Y. Simmons
Abstract:
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for…
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We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for different charge states across the system. We use a modified Hubbard Hamiltonian to describe the system dynamics and show that it reproduces all experimental observations.
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Submitted 12 September, 2016;
originally announced September 2016.
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Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Authors:
Samuel K. Gorman,
Matthew A. Broome,
Joris G. Keizer,
Thomas F. Watson,
Samuel J. Hile,
William J. Baker,
Michelle Y. Simmons
Abstract:
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on…
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The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract ${t}_{\rm{c}}=5.5\pm 1.8\;{\rm{GHz}}$ and ${t}_{\rm{c}}=2.2\pm 1.3\;{\rm{GHz}}$ between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of $t_c$ for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.
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Submitted 5 June, 2016; v1 submitted 2 June, 2016;
originally announced June 2016.
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The impact of nuclear spin dynamics on electron transport through donors
Authors:
Samuel K. Gorman,
Matthew A. Broome,
William J. Baker,
Michelle Y. Simmons
Abstract:
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron…
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We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron transport measurements only. We extend our model to include realistic effects such as Stark shifted hyperfine interactions and multi-donor clusters. In the case of multi-donor clusters we show how nuclear spin blockade can be alleviated allowing for low magnetic field electron spin measurements.
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Submitted 17 September, 2015;
originally announced September 2015.
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Using coherent dynamics to quantify spin-coupling within triplet-exciton/polaron complexes in organic diodes
Authors:
W. J. Baker,
T. L. Keevers,
C. Boehme,
D. R. McCamey
Abstract:
Quantifying the spin-spin interactions which influence electronic transitions in organic semiconductors is crucial for understanding their magneto-optoelectronic properties. By combining a theoretical model for three spin interactions in the coherent regime with pulsed electrically detected magnetic resonance experiments on MEH-PPV diodes, we quantify the spin-coupling within complexes comprising…
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Quantifying the spin-spin interactions which influence electronic transitions in organic semiconductors is crucial for understanding their magneto-optoelectronic properties. By combining a theoretical model for three spin interactions in the coherent regime with pulsed electrically detected magnetic resonance experiments on MEH-PPV diodes, we quantify the spin-coupling within complexes comprising three spin-half particles. We determine that these particles form triplet-exciton:polaron pairs, where the polaron:exciton exchange is over 5 orders of magnitude weaker (less than 170 MHz) than that within the exciton. This approach providing a direct spectroscopic approach for distinguishing between coupling regimens, such as strongly bound trions, which have been proposed to occur in organic devices.
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Submitted 19 February, 2015;
originally announced February 2015.
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Exciton-polaron complexes in pulsed electrically-detected magnetic resonance
Authors:
T. L. Keevers,
W. J. Baker,
D. R. McCamey
Abstract:
Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic process actually influences the overall magnetic field response is challenging. Pulsed electrically-detected magnetic resonance provides an ideal platform for this task as it intrinsically monitors the charge carriers of inte…
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Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic process actually influences the overall magnetic field response is challenging. Pulsed electrically-detected magnetic resonance provides an ideal platform for this task as it intrinsically monitors the charge carriers of interest and provides dynamical information which is inaccessible through conventional magnetoconductance measurements. Here we develop a general time domain theory to describe the spin-dependent reaction of exciton-charge complexes following the coherent manipulation of paramagnetic centers through electron spin resonance. A general Hamiltonian is treated, and it is shown that the transition frequencies and resonance positions of the exciton-polaron complex can be used to estimate inter-species coupling. This work also provides a general formalism for analysing multi-pulse experiments which can be used to extract relaxation and transport rates.
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Submitted 19 February, 2015;
originally announced February 2015.
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Spin-dependent exciton quenching and intrinsic spin coherence in CdSe/CdS nanocrystals
Authors:
Kipp J. van Schooten,
Jing Huang,
William J. Baker,
Dmitri V. Talapin,
Christoph Boehme,
John M. Lupton
Abstract:
Large surface to volume ratios of semiconductor nanocrystals cause susceptibility to charge trapping, which can modify luminescence yields and induce single-particle blinking. Optical spectroscopies cannot differentiate between bulk and surface traps in contrast to spin-resonance techniques, which in principle avail chemical information on such trap sites. Magnetic resonance detection via spin-con…
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Large surface to volume ratios of semiconductor nanocrystals cause susceptibility to charge trapping, which can modify luminescence yields and induce single-particle blinking. Optical spectroscopies cannot differentiate between bulk and surface traps in contrast to spin-resonance techniques, which in principle avail chemical information on such trap sites. Magnetic resonance detection via spin-controlled photoluminescence enables the direct observation of interactions between emissive excitons and trapped charges. This approach allows the discrimination of two functionally different trap states in CdSe/CdS nanocrystals underlying the fluorescence quenching and thus blinking mechanisms: a spin-dependent Auger process in charged particles; and a charge-separated state pair process, which leaves the particle neutral. The paramagnetic trap centers offer control of energy transfer from the wide-gap CdS to the narrow-gap CdSe, i.e. light harvesting within the heterostructure. Coherent spin motion within the trap states of the CdS arms of nanocrystal tetrapods is reflected by spatially remote luminescence from CdSe cores with surprisingly long coherence times of >300 ns at 3.5 K.
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Submitted 21 October, 2012;
originally announced October 2012.
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Numerical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (s=1/2) during magnetic resonant excitation
Authors:
M. E. Limes,
J. Wang,
W. J. Baker,
S. -Y. Lee,
B. Saam,
C. Boehme
Abstract:
The effect of dipolar and exchange interactions within pairs of paramagnetic electronic states on Pauli-blockade-controlled spin-dependent transport and recombination rates during magnetic resonant spin excitation is studied numerically using the superoperator Liouville-space formalism. The simulations reveal that spin-Rabi nutation induced by magnetic resonance can control transition rates which…
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The effect of dipolar and exchange interactions within pairs of paramagnetic electronic states on Pauli-blockade-controlled spin-dependent transport and recombination rates during magnetic resonant spin excitation is studied numerically using the superoperator Liouville-space formalism. The simulations reveal that spin-Rabi nutation induced by magnetic resonance can control transition rates which can be observed experimentally by pulsed electrically (pEDMR) and pulsed optically (pODMR) detected magnetic resonance spectroscopies. When the dipolar coupling exceeds the difference of the pair partners' Zeeman energies, several nutation frequency components can be observed, the most pronounced at sqrt{2} gamma B_1 (gamma is the gyromagnetic ratio, B_1 is the excitation field). Exchange coupling does not significantly affect this nutation component; however, it does strongly influence a low-frequency component < gamma B_1. Thus, pEDMR/pODMR allow the simultaneous identification of exchange and dipolar interaction strengths.
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Submitted 4 October, 2012; v1 submitted 2 October, 2012;
originally announced October 2012.
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Analytical description of spin-Rabi oscillation controlled electronic transitions rates between weakly coupled pairs of paramagnetic states with S=1/2
Authors:
R. Glenn,
W. J. Baker,
C. Boehme,
M. E. Raikh
Abstract:
We report on an analytical description of spin-dependent electronic transition rates which are controlled by a radiation induced spin-Rabi oscillation of weakly spin-exchange and spin-dipolar coupled paramagnetic states (S=1/2). The oscillation components (the Fourier content) of the net transition rates within spin-pair ensembles are derived for randomly distributed spin resonances with account o…
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We report on an analytical description of spin-dependent electronic transition rates which are controlled by a radiation induced spin-Rabi oscillation of weakly spin-exchange and spin-dipolar coupled paramagnetic states (S=1/2). The oscillation components (the Fourier content) of the net transition rates within spin-pair ensembles are derived for randomly distributed spin resonances with account of a possible correlation between the two distributions that correspond to the two individual pair partners. The results presented here show that when electrically or optically detected Rabi spectroscopy is conducted under an increasing driving field B_ 1, the Rabi spectrum evolves from a single resonance peak at s=Ω_R, where Ω_R=γB_1 is the Rabi frequency (γis the gyromagnetic ratio), to three peaks at s= Ω_R, s=2Ω_R, and at low s<< Ω_R. The crossover between the two regimes takes place when Ω_R exceeds the expectation value δ_0 of the difference of the Zeeman energies within the pairs, which corresponds to the broadening of the magnetic resonance lines in the presence of disorder caused by hyperfine field or distributions of Lande g-factors. We capture this crossover by analytically calculating the shapes of all three peaks at arbitrary relation between Ω_R and δ_0. When the peaks are well-developed their widths are Δs ~ δ_0^2/Ω_R.
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Submitted 6 July, 2012;
originally announced July 2012.
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$T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
Authors:
S. -Y. Paik,
S. -Y. Lee,
W. J. Baker,
D. R. McCamey. C. Boehme
Abstract:
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$)…
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A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magnetic resonance (pEDMR), spin--dependent transitions between the \Phos donor state and two distinguishable interface states are observed, namely (i) \Pb centers which can be identified by their characteristic anisotropy and (ii) a more isotropic center which is attributed to E$^\prime$ defects of the \sio bulk close to the interface. Correlation measurements of the dynamics of spin--dependent recombination confirm that previously proposed transitions between \Phos and the interface defects take place. The influence of these electronic near--interface transitions on the \Phos donor spin coherence time $T_2$ as well as the donor spin--lattice relaxation time $T_1$ is then investigated by comparison of spin Hahn--echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that both $T_2$ and $T_1$ of \Phos donor electrons spins in proximity of energetically lower interface states at $T\leq 13$ K are reduced by several orders of magnitude.
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Submitted 4 May, 2009;
originally announced May 2009.
