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Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements
Authors:
J. Huang,
J. A. Alexander-Webber,
A. M. R. Baker,
T. J. B. M. Janssen,
A. Tzalenchuk,
V. Antonov,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
R. J. Nicholas
Abstract:
We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder…
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We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations.
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Submitted 14 May, 2015;
originally announced May 2015.
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Weak localization scattering lengths in epitaxial, and CVD graphene
Authors:
A. M. R. Baker,
J. A. Alexander-Webber,
T. Altebaeumer,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
C. -T. Lin,
L. -J. Li,
R. J. Nicholas
Abstract:
Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L…
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Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity.
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Submitted 10 May, 2013;
originally announced May 2013.
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Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
Authors:
J. A. Alexander-Webber,
A. M. R. Baker,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
B. A. Piot,
D. K. Maude,
R. J. Nicholas
Abstract:
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)…
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We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.
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Submitted 17 April, 2013;
originally announced April 2013.
