Showing 1–3 of 3 results for author: Bais, G

Magnetic field driven novel phase transitions in EuTiO$_3$

Authors: P. Pappas, M. Calamiotou, M. Polentarutti, G Bais, A. Bussmann-Holder, E. Liarokapis

Abstract: The influence of an external static magnetic field (up to 480 mT)on the structural properties of EuTiO$_3$ (ETO) polycrystalline samples was examined by powder XRD at the Elettra synchrotron facilities in the temperature range 100-300K. While the cubic to tetragonal structural phase transition temperature in this magnetic field range remains almost unaffected, significant lattice effects appear at… ▽ More The influence of an external static magnetic field (up to 480 mT)on the structural properties of EuTiO$_3$ (ETO) polycrystalline samples was examined by powder XRD at the Elettra synchrotron facilities in the temperature range 100-300K. While the cubic to tetragonal structural phase transition temperature in this magnetic field range remains almost unaffected, significant lattice effects appear at two characteristic temperatures (~200K and 250K), which becomes more pronounced at a critical threshold magnetic field. At ~200K a change in the sign of the magnetostriction is detected attributed to a modification of the local magnetic properties from intrinsic ferromagnetism to intrinsic antiferromagnetism. These data are a clear indication that strong spin-lattice interactions govern also the high temperature phase of ETO and trigger the appearance of magnetic domain formation and novel phase transitions △ Less

Submitted 17 March, 2021; v1 submitted 8 March, 2021; originally announced March 2021.

Manipulating electronic states at oxide interfaces using focused micro X-rays from standard lab-sources

Authors: Nicola Poccia, Alessandro Ricci, Francesco Coneri, Martin Stehno, Gaetano Campi, Nicola Demitri, Giorgio Bais, X. Renshaw Wang, H. Hilgenkamp

Abstract: Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the… ▽ More Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the complex oxide materials LaAlO3 and SrTiO3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources. △ Less

Submitted 1 November, 2014; originally announced November 2014.

Comments: 12 pages, 4 figures

The Mn site in Mn-doped Ga-As nanowires: an EXAFS study

Authors: F. d'Acapito, M. Rovezzi, F. Boscherini, F. Jabeen, G. Bais, M. Piccin, S. Rubini, F. Martelli

Abstract: We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly… ▽ More We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched Mn-As coordination we have found the presence of Mn in a Mn-Au intermetallic compound. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at doi:10.1088/0268-1242/27/8/085001

Journal ref: Semicond. Sci. Technol. 27 (2012) 085001