Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Authors:
Konstantinos Pantzas,
Sylvain Combrié,
Myriam Bailly,
Raphaël Mandouze,
Francesco Rinaldi Talenti,
Abdelmounaim Harouri,
Bruno Gérard,
Grégoire Beaudoin,
Luc Le Gratiet,
Gilles Patriarche,
Alfredo de Rossi,
Yoan Léger,
Isabelle Sagnes,
Arnaud Grisard
Abstract:
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c…
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A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
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Submitted 5 May, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Authors:
Konstantinos Pantzas,
Grégoire Beaudoin,
Myriam Bailly,
Aude Martin,
Arnaud Grisard,
Daniel Dolfi,
Olivia Mauguin,
Ludovic Largeau,
Isabelle Sagnes,
Gilles Patriarche
Abstract:
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri…
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The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template.
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Submitted 8 January, 2021;
originally announced January 2021.
