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Observation of quasi-steady dark excitons and gap phase in a doped semiconductor
Authors:
Shangkun Mo,
Yunfei Bai,
Chunlong Wu,
Xingxia Cui,
Guangqiang Mei,
Qiang Wan,
Renzhe Li,
Cao Peng,
Keming Zhao,
Dingkun Qin,
Shuming Yu,
Hao Zhong,
Xingzhe Wang,
Enting Li,
Yiwei Li,
Limin Cao,
Min Feng,
Sheng Meng,
Nan Xu
Abstract:
Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, c…
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Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, critical for electronic devices in working status, is still elusive. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasi-equilibrium distribution in a doped semiconductor SnSe2. Surprisingly, we observe an excitonic gap phase, with a conduction band opening an anisotropic gap. Our results broaden the scope of dark excitons, extending their studies from the picosecond timescale in the ultrafast photoemission process to conditions occurring under quasi-equilibrium. We reveal the light-matter interaction in the engineering of electronic structures and provide a new way to realize the excitonic gap phase in semiconductors with large band gaps.
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Submitted 11 July, 2025;
originally announced July 2025.
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Electric Field Control of Spin Orbit Coupling and Circular Photogalvanic Effect in a True Ferrielectric Crystal
Authors:
Yunlin Lei,
Xinyu Yang,
Shouyu Wang,
Daliang Zhang,
Zitao Wang,
Jiayou Zhang,
Yihao Yang,
Chuanshou Wang,
Tianqi Xiao,
Yinxin Bai,
Junjiang Tian,
Congcong Chen,
Yu Han,
Shuai Dong,
Junling Wang
Abstract:
Materials possessing long range ordering of magnetic spins or electric dipoles have been the focus of condensed matter research. Among them, ferri-systems with two sublattices of unequal/noncollinear spins or electric dipoles are expected to combine the properties of ferro- and antiferro-systems, but lack experimental observations in single phase materials. This is particularly true for the ferrie…
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Materials possessing long range ordering of magnetic spins or electric dipoles have been the focus of condensed matter research. Among them, ferri-systems with two sublattices of unequal/noncollinear spins or electric dipoles are expected to combine the properties of ferro- and antiferro-systems, but lack experimental observations in single phase materials. This is particularly true for the ferrielectric system, since the electric dipoles usually can be redefined to incorporate the two sublattices into one, making it indistinguishable from ferroelectric. This raises doubts about whether or not ferrielectricity can be considered as an independent ferroic order. Here we report the observation of true ferrielectric behaviors in a hybrid single crystal (MV)[SbBr5] (MV2+ = N,N'-dimethyl-4,4'-bipyridinium or methylviologen), where the two electric dipole sublattices switch asynchronously, thus cannot be reduced to ferroelectric by redefining the unit cell. Furthermore, the complex dipole configuration imparts circularly polarized light sensitivity to the system. An electric field can modulate the non-collinear dipole sublattices and even induce a transition from ferrielectric to ferroelectric state, thereby tuning the helicity-dependent photocurrent. This study opens a new paradigm for the study of true irreducible ferrielectricity (a new class of polar system) and provides an effective approach to the electric field control of spin-orbit coupling and circular photogalvanic effect.
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Submitted 15 June, 2025;
originally announced June 2025.
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Exploring light-induced phases of 2D materials in a modulated 1D quasicrystal
Authors:
Yifei Bai,
Anna R. Dardia,
Toshihiko Shimasaki,
David M. Weld
Abstract:
Illuminating integer quantum Hall matter with polarized light can drive quantum phase transitions. Technical limitations on laser intensity and material purity make such experiments challenging in the solid state. However, the Harper-Hofstadter mapping which relates a two-dimensional integer quantum Hall system to a 1D quasicrystal enables the same polarization-dependent light-induced phase transi…
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Illuminating integer quantum Hall matter with polarized light can drive quantum phase transitions. Technical limitations on laser intensity and material purity make such experiments challenging in the solid state. However, the Harper-Hofstadter mapping which relates a two-dimensional integer quantum Hall system to a 1D quasicrystal enables the same polarization-dependent light-induced phase transitions to be observed using a quantum gas in a driven quasiperiodic optical lattice. We report experimental results from such a 1D quantum simulator of 2D integer quantum Hall matter driven by light of variable polarization. We observe an interlaced phase diagram of localization-delocalization phase transitions as a function of drive polarization and amplitude. Elliptically polarized driving can stabilize an extended critical phase featuring multifractal wavefunctions; we observe signatures of this phenomenon in subdiffusive transport. In this regime, increasing the strength of the quasiperiodic potential can enhance rather than suppress transport. These experiments demonstrate a simple method for synthesizing exotic multifractal states and exploring light-induced quantum phases across different dimensionalities.
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Submitted 16 June, 2025; v1 submitted 13 June, 2025;
originally announced June 2025.
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Spectroscopic evidence of intra-unit-cell charge redistribution in charge-neutral magnetic topological insulator Sb-doped MnBi6Te10
Authors:
Khanh Duy Nguyen,
Gabriele Berruto,
Seng Huat Lee,
Yunhe Bai,
Haoran Lin,
Qiang Gao,
Zhiqiang Mao,
Shuolong Yang
Abstract:
The magnetic topological insulator MnBi$_{6}$Te$_{10}$ has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal…
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The magnetic topological insulator MnBi$_{6}$Te$_{10}$ has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal an intra-unit-cell charge redistribution even when the overall doping suggests a near-charge-neutral condition. By performing time- and angle-resolved photoemission spectroscopy (trARPES) on the optimally 18% Sb-doped MnBi$_{6}$Te$_{10}$, we observe transient surface photovoltage (SPV) effects on both the MnBi$_{2}$Te$_{4}$ and single-Bi$_{2}$Te$_{3}$ terminations. Furthermore, we observe a time-dependent splitting of the band structure indicating multiple SPV shifts with different magnitudes. This observation suggests that adjacent plateaus with nominally the same terminating layer exhibit a strong intra-unit-cell charge redistribution, resulting in spontaneous electrical polarization. This is consistent with static micro-ARPES measurements revealing significant doping deviations from the charge-neutral configuration. Our findings underscore the challenges of engineering the family of Mn-Bi-Te materials to realize QAHE purely through chemical doping. Achieving the desired topological quantum phase requires both a uniform carrier doping and a ferromagnetic ground state. Furthermore, the light-induced polarization within each unit cell of ferromagnetic Mn(Bi$_{0.82}$Sb$_{0.18}$)$_{6}$Te$_{10}$ may open new possibilities for optoelectronic and spintronics.
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Submitted 6 May, 2025;
originally announced May 2025.
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Maze-Bubble Pattern Magnetic Domain Simulation Based on the Lengyel-Epstein Model
Authors:
Yufei Bai
Abstract:
This study is based on the Lengyel-Epstein (LE) model, governed by a system of nonlinear partial differential equations, to simulate the maze-bubble pattern magnetic domains in magnetic thin films with perpendicular magnetic anisotropy (PMA). Through numerical simulations, we successfully reproduce the maze, bubble, and intermediate-state magnetic domains observed in PMA multilayer films under the…
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This study is based on the Lengyel-Epstein (LE) model, governed by a system of nonlinear partial differential equations, to simulate the maze-bubble pattern magnetic domains in magnetic thin films with perpendicular magnetic anisotropy (PMA). Through numerical simulations, we successfully reproduce the maze, bubble, and intermediate-state magnetic domains observed in PMA multilayer films under the influence of material thickness and external magnetic fields. The topological structures of the magnetic domains shown in the simulation closely resemble those observed under a microscope, demonstrating the effectiveness of the LE model in simulating changes in the magnetic domain topology of magnetic thin films. This study also innovatively applies the concept of reaction-diffusion, commonly used in biochemistry, by drawing an analogy to electromagnetism. This approach holds significant implications for the study of magnetic domains.
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Submitted 17 April, 2025;
originally announced April 2025.
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A Topological Superconductor Tuned by Electronic Correlations
Authors:
Haoran Lin,
Christopher L. Jacobs,
Chenhui Yan,
Gillian M. Nolan,
Gabriele Berruto,
Patrick Singleton,
Khanh Duy Nguyen,
Yunhe Bai,
Qiang Gao,
Xianxin Wu,
Chao-Xing Liu,
Gangbin Yan,
Suin Choi,
Chong Liu,
Nathan P. Guisinger,
Pinshane Y. Huang,
Subhasish Mandal,
Shuolong Yang
Abstract:
A topological superconductor, characterized by either a chiral order parameter or a chiral topological surface state in proximity to bulk superconductivity, is foundational to topological quantum computing. As in other topological phases of matter, electronic correlations can tune topological superconductivity via modifications of the low-energy Fermiology. Such tuning has not been realized so far…
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A topological superconductor, characterized by either a chiral order parameter or a chiral topological surface state in proximity to bulk superconductivity, is foundational to topological quantum computing. As in other topological phases of matter, electronic correlations can tune topological superconductivity via modifications of the low-energy Fermiology. Such tuning has not been realized so far. Here we uncover a unique topological superconducting phase in competition with electronic correlations in 10-unit-cell thick FeTe$_{x}$Se$_{1-x}$ films grown on SrTiO$_{3}$ substrates. When the Te content $x$ exceeds $0.7$, we observe a rapid increase of the effective mass for the Fe $d_{xy}$ band, with the emergence of a superconducting topological surface state confirmed by high-resolution angle-resolved photoemission spectroscopy; however, near the FeTe limit, the system enters an incoherent regime where the topological surface state becomes unidentifiable and superconductivity is suppressed. Theory suggests that the electron-electron interactions in the odd-parity $xy^-$ band with a strong $d_{xy}$ character lead to an orbital-selective correlated phase. Our work establishes FeTe$_{x}$Se$_{1-x}$ thin films as a unique platform where electronic correlations sensitively modulate topological superconductivity, suggesting opportunities to use tunable electron-electron interactions to engineer new topological phases in a broad class of materials.
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Submitted 28 March, 2025;
originally announced March 2025.
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Ideal Weyl fermions and double Kagome bands in a series of distorted armchair-type all-$\emph{sp}^{2}$ carbon networks
Authors:
Yun-Yun Bai,
Yan Gao,
Weikang Wu,
Yong Liu,
Zhong-Yi Lu
Abstract:
The study of the Weyl fermions and Kagome bands has recently attracted significant attention in condensed matter physics. However, realizing of perfect Weyl semimetals and double Kagome bands remains challenging. Here, we report a new class of distorted armchair-type fully sp2-hybridized carbon networks, termed DACN-n. The DACN-n family is characterized by only six pairs of Weyl points on the…
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The study of the Weyl fermions and Kagome bands has recently attracted significant attention in condensed matter physics. However, realizing of perfect Weyl semimetals and double Kagome bands remains challenging. Here, we report a new class of distorted armchair-type fully sp2-hybridized carbon networks, termed DACN-n. The DACN-n family is characterized by only six pairs of Weyl points on the $k_z=0$ plane near the Fermi level. We calculated the chirality of these Weyl points and found that each carries a topological charge of $\pm$1. Notably, DACN-5 exhibits a double Kagome band, where the Weyl points arise from the intersection between Dirac-type bands in the two sets of Kagome bands. The structural stability of DACN-n is confirmed by phonon spectra, ab initio molecular dynamics simulations, and elastic constant calculations. Additionally, we investigated the surface states of the (001) surface and found that its nontrivial topological properties are attributed to the Fermi arcs connecting a pair of Weyl points with opposite chirality. We also simulated x-ray diffraction patterns to guide experimental synthesis. Our findings not only present a new family of three-dimensional carbon allotropes, but also provide a unique opportunity for exploring ideal Weyl fermions and double Kagome bands.
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Submitted 19 March, 2025;
originally announced March 2025.
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Intrinsic exciton transport and recombination in single-crystal lead bromide perovskite
Authors:
Zhixuan Bi,
Yunfei Bai,
Ying Shi,
Tao Sun,
Heng Wu,
Haochen Zhang,
Yuhang Cui,
Danlei Zhu,
Yubin Wang,
Miao-Ling Lin,
Yaxian Wang,
Dongxin Ma,
Ping-Heng Tan,
Sheng Meng,
Qihua Xiong,
Luyi Yang
Abstract:
Photogenerated carrier transport and recombination in metal halide perovskites are critical to device performance. Despite considerable efforts, sample quality issues and measurement techniques have limited the access to their intrinsic physics. Here, by utilizing high-purity CsPbBr3 single crystals and contact-free transient grating spectroscopy, we directly monitor exciton diffusive transport fr…
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Photogenerated carrier transport and recombination in metal halide perovskites are critical to device performance. Despite considerable efforts, sample quality issues and measurement techniques have limited the access to their intrinsic physics. Here, by utilizing high-purity CsPbBr3 single crystals and contact-free transient grating spectroscopy, we directly monitor exciton diffusive transport from 26 to 300 K. As the temperature (T) increases, the carrier mobility (μ) decreases rapidly below 100 K wtih a μ~T^{-3.0} scaling, and then follows a more gradual μ~T^{-1.7} trend at higher temperatures. First-principles calculations perfectly reproduce this experimental trend and reveal that optical phonon scattering governs carrier mobility shifts over the entire temperature range, with a single longitudinal optical mode dominating room-temperature transport. Time-resolved photoluminescence further identifies a substantial increase in exciton radiative lifetime with temperature, attributed to increased exciton population in momentum-dark states caused by phonon scattering. Our findings unambiguously resolve previous theory-experiment discrepancies, providing benchmarks for future optoelectronic design.
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Submitted 10 May, 2025; v1 submitted 3 March, 2025;
originally announced March 2025.
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Parametric study of filament and gap models of resistive switching in TaO$_x$-based devices
Authors:
Rongchen Li,
Yang Bai,
Marek Skowronski
Abstract:
A finite element model consisting of a conducting filament with or without a gap was used to reproduce behavior of TaO$_x$-based resistive switching devices. The specific goal was to explore the range of possible filament parameters such a filament diameter, composition, gap width, and composition to reproduce the conductance and shape of I-V while keeping the maximum temperature within acceptable…
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A finite element model consisting of a conducting filament with or without a gap was used to reproduce behavior of TaO$_x$-based resistive switching devices. The specific goal was to explore the range of possible filament parameters such a filament diameter, composition, gap width, and composition to reproduce the conductance and shape of I-V while keeping the maximum temperature within acceptable range allowing for ion motion and preventing melting. The model solving heat and charge transport produced a good agreement with experimental data for the oxygen content in the filament below TaO$_{1.3}$, the filament diameter range between 6 and 22 nm, and the gap oxygen content between TaO$_{1.7}$ and TaO$_{1.85}$. Gap width was not limited on either low or high sides by the criteria considered in this report. The obtained filament composition corresponds to oxygen deficiency an order of magnitude higher than one estimated by other modelling efforts. This was in a large part due to use of recent experimental values of conductivity as a function of composition and temperature. Our modelling results imply that a large fraction of atoms leaves and/or accumulates within the filament to produce large relative concentration change. This, in turn, necessitates inclusion of strain energy in the filament formation modelling. In addition, the results reproduce non-linear I-V without the necessity of assuming the Poole-Frenkel type of electrical conduction or presence of a barrier at the oxide/metal interface.
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Submitted 22 November, 2024;
originally announced November 2024.
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Entropy dynamics of the binary bond disordered Heisenberg chain
Authors:
Di Han,
Yankui Bai,
Yang Zhao
Abstract:
In this article, we study the quench dynamics of the binary bond disordered Heisenberg spin chain. First, we develop a new algorithm, the ancilla TEBD method, which combines the purification technique and the time-evolving block decimation (TEBD) algorithm to study the entanglement dynamics of binary bonded disordered spin chains. With the support of exact diagonalization (ED), we calculate the mu…
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In this article, we study the quench dynamics of the binary bond disordered Heisenberg spin chain. First, we develop a new algorithm, the ancilla TEBD method, which combines the purification technique and the time-evolving block decimation (TEBD) algorithm to study the entanglement dynamics of binary bonded disordered spin chains. With the support of exact diagonalization (ED), we calculate the multifaractal dimension of the binary bond disordered Heisenberg spin model and study its dependence on the strength of the disorder potential; we find that the multifaractal dimension shows no critical behavior which rules out the existence of the many body localization transition. Then, we reproduce the long time scaling of the von Neumann entropy at the time scale that is beyond the reach of typical TEBD and time dependent density matrix renormalization group (tDMRG) algorithms. Based on the numerical analysis, we propose that such a long time scaling is due to the competition of the spin interaction and the disorder which can be seen as a new mechanism for the generating of long time scale entropy dynamics. At last, we numerically proved the existence of the transient Mpemba effect in the bond disordered Heisenberg chain.
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Submitted 14 November, 2024; v1 submitted 14 November, 2024;
originally announced November 2024.
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Geometry Dynamics in Chiral Superfluids
Authors:
Yuting Bai,
Gabriel Cardoso,
Rajae Malek,
Qing-Dong Jiang
Abstract:
We investigate the geometric response of chiral superfluids when coupled to a dynamic background geometry. We find that geometry fluctuations, represented by the flexural mode, interact with the superfluid phase fluctuations (the Goldstone mode). Starting from a minimally coupled theory, we derive the equilibrium conditions for a static background defined by supercurrent, curvature, and tension, a…
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We investigate the geometric response of chiral superfluids when coupled to a dynamic background geometry. We find that geometry fluctuations, represented by the flexural mode, interact with the superfluid phase fluctuations (the Goldstone mode). Starting from a minimally coupled theory, we derive the equilibrium conditions for a static background defined by supercurrent, curvature, and tension, and then obtain linearized equations for the propagation of the Goldstone and flexural modes. The equations reveal distinctive chirality-dependent effects in the propagation of the flexural mode. Specifically, a background supercurrent induces a chiral drag effect, localizing flexural waves at the superfluid boundary, while background curvature introduces anisotropic corrections to the superfluid phase and group velocities, as well as a tension in the flexural mode dispersion. Furthermore, curvature couples flexural and phase modes into dressed excitations, with tilted Dirac cones along the principal curvature directions. These effects provide dynamical signatures of the formation of a chiral condensate, and can be tuned by manipulating the background geometry.
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Submitted 30 October, 2024;
originally announced October 2024.
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Nonlinear field dependence of Hall effect and high-mobility multi-carrier transport in an altermagnet CrSb
Authors:
Yuqing Bai,
Xinji Xiang,
Shuang Pan,
Shichao Zhang,
Haifeng Chen Xi Chen,
Zhida Han,
Guizhou Xu,
Feng Xu
Abstract:
As a promising candidate for altermagnet, CrSb possesses a distinctive compensated spin split band structure that could bring groundbreaking concepts to the field of spintronics. In this work, we have grown high-quality CrSb single crystals and comprehensively investigated their electronic and magneto-transport properties. We have observed large, positive, and non-saturated magnetoresistance (MR)…
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As a promising candidate for altermagnet, CrSb possesses a distinctive compensated spin split band structure that could bring groundbreaking concepts to the field of spintronics. In this work, we have grown high-quality CrSb single crystals and comprehensively investigated their electronic and magneto-transport properties. We have observed large, positive, and non-saturated magnetoresistance (MR) in CrSb, which well obeys Kohler's rule, indicating its classic Lorentz scattering origins. Remarkably, a nonlinear magnetic field dependence of Hall effect resembling the spontaneous anomalous Hall is identified over a wide temperature range. After careful analysis of the transport data, we conclude the non-linearity mainly stems from the incorporation of different carriers in the magnetoconductivity. According to the Fermi surface analyses of CrSb, we applied the three-carrier model to fit the conductivity data, yielding good agreement. The extracted carrier concentration and mobility indicates that CrSb behaves more like a semimetal, with the highest mobility reaching 3*103 cm2V-1s-1. Furthermore, calculations using the semiclassical Boltzmann transport theory have successfully reproduced the main features of the experimental MR and Hall effect in CrSb. These exceptional transport properties make CrSb unique for applications in spintronics as an altermagnet.
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Submitted 9 February, 2025; v1 submitted 23 September, 2024;
originally announced September 2024.
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Doping evolution of the normal state magnetic excitations in pressurized La3Ni2O7
Authors:
Hai-Yang Zhang,
Yu-Jie Bai,
Fan-Jie Kong,
Xiu-Qiang Wu,
Yu-Heng Xing,
Ning Xu
Abstract:
The doping evolution behaviors of the normal state magnetic excitations (MEs) of the nickelate La3Ni2O7 are theoretically studied in this paper. For a filling of n = 3.0 which corresponds roughly to the material which realizes the superconductivity of about 80 K under moderately high pressures above 14 GPa, the MEs exhibit a square-like pattern centered at (0,0) which originates from the intrapock…
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The doping evolution behaviors of the normal state magnetic excitations (MEs) of the nickelate La3Ni2O7 are theoretically studied in this paper. For a filling of n = 3.0 which corresponds roughly to the material which realizes the superconductivity of about 80 K under moderately high pressures above 14 GPa, the MEs exhibit a square-like pattern centered at (0,0) which originates from the intrapocket particle-hole scatterings. Furthermore, it was found that the MEs show very strong modulations on the interlayer momentum qz. With the increasing of qz, the patterns of the MEs change dramatically. In the large qz regime, they turn to be ruled by the interpocket excitation modes with significantly larger intensity which may play a vital role in the superconducting pairing. This hidden feature of the MEs was not revealed by previous studies. The established features of the MEs are found to be very robust against doping. They persist in the wide hole- or electron-doping regime around n = 3.0. However, in the heavily electron-doped regime, a Lifshitz transition will occur. Consequently, the behaviors of the MEs change qualitatively across this transition. With the absence of the hole pocket, we predict that a strong tendency toward the spin-density-wave (SDW) order will develop due to the perfect nesting between the electron and the hole pockets at n = 4.0. Thus, we have investigated the normal state behaviors of the MEs and their doping evolutions which may shed light on the mechanism of superconductivity in pressurized La3Ni2O7.
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Submitted 27 December, 2024; v1 submitted 7 August, 2024;
originally announced August 2024.
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Alternating-Chiral Charge Density Waves and Hybrid Ferrimagnetism in Monolayered NbTe2
Authors:
Yusong Bai,
Guohua Cao,
Jinghao Deng,
Haomin Fei,
Xiaoyu Lin,
Leiqiang Li,
Chao Zhu,
Zemin Pan,
Tao Jian,
Da Huo,
Zhengbo Cheng,
Chih-Kang Shih,
Ping Cui,
Chendong Zhang,
Zhenyu Zhang
Abstract:
Intertwining of different quantum degrees of freedom manifests exotic quantum phenomena in many-body systems, especially in reduced dimensionality. Here we show that monolayered NbTe2 serves as an ideal platform where lattice, charge, and spin degrees of freedom manifest cooperatively, leading to a new and threading order of chirality. By using spin-polarized scanning tunneling microscopy/spectros…
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Intertwining of different quantum degrees of freedom manifests exotic quantum phenomena in many-body systems, especially in reduced dimensionality. Here we show that monolayered NbTe2 serves as an ideal platform where lattice, charge, and spin degrees of freedom manifest cooperatively, leading to a new and threading order of chirality. By using spin-polarized scanning tunneling microscopy/spectroscopy, we reveal that the root19 * root19 phase of NbTe2 is encoded with both alternating-chiral atomic displacements and charge density waves, characterized by two chiral units of opposite handedness within the reconstructed cell. We show unambiguous evidence for emergent spin polarizations spreading over the primitive cell, with the magnetization orientation synchronized with alternating handedness of chiral order. Our first-principles studies identify the origin of intertwined orders being correlation driven, with the threading order of chirality emerging when the on-site Coulomb repulsion exceeds a critical value. The spin ordering is further shown to be of hybrid ferrimagnetic nature, contributed by the itinerant electrons and localized d-orbitals. Collectively, these findings expand the realm of chiral order in correlated electron systems, and facilitate an appealing platform for chiral spintronic and related applications.
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Submitted 22 June, 2024;
originally announced June 2024.
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Gateway to all-optical spin switching in Heusler ferrimagnets: Pancharatnam-Berry tensor and magnetic moment ratio
Authors:
G. P. Zhang,
Y. Q. Liu,
M. S. Si,
Nicholas Allbritton,
Y. H. Bai,
Wolfgang Hübner,
Thomas F. George
Abstract:
All-optical spin switching (AOS) is a new phenomenon found in a small group of magnetic media, where a single laser pulse can switch spins from one direction to another, without assistance of a magnetic field, on a time scale much shorter than existing magnetic technology. However, despite intensive efforts over a decade, its underlying working principle remains elusive. Here through manganese-bas…
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All-optical spin switching (AOS) is a new phenomenon found in a small group of magnetic media, where a single laser pulse can switch spins from one direction to another, without assistance of a magnetic field, on a time scale much shorter than existing magnetic technology. However, despite intensive efforts over a decade, its underlying working principle remains elusive. Here through manganese-based Heusler ferrimagnets, we show that a group of flat bands around the Fermi level act as gateway states to form efficient channels or spin switching, where their noncentrosymmetry allows us to correlate the spin dynamics to the second-order optical response. To quantify their efficacy, we introduce the third-rank Pancharatnam-Berry tensor (PB tensor), $\boldsymbolη^{(3)}=\langle i |{\bf p} |m\rangle \langle m|{\bf p} |f\rangle \langle f|{\bf p} |i\rangle,$ where $|i\rangle$, $|m\rangle$ and $|f\rangle$ are initial, intermediate and final band states, respectively, and ${\bf p}$ is the momentum operator. A picture emerges: Those which show AOS, such as the recently discovered Mn$_2$RuGa, always have a large PB tensor element} but have a small sublattice spin moment ratio, consistent with the prior experimental small remanence criterion. This does not only reveal that the delicate balance between the large PB tensor element and the small sublattice spin ratio plays a decisive role in AOS, but also, conceptually, connects the $n$th-order nonlinear optics to $(n+1)$th-rank PB tensors in general.
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Submitted 16 June, 2024;
originally announced June 2024.
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Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy
Authors:
Yunhe Bai,
Yuanzhao Li,
Ruixuan Liu,
Jianli Luan,
Yang Chen,
Wenyu Song,
Peng-Fei Ji,
Cui Ding,
Zongwei Gao,
Qinghua Zhang,
Fanqi Meng,
Bingbing Tong,
Lin Li,
Tianchen Zhu,
Lin Gu,
Lili Wang,
Jinsong Zhang,
Yayu Wang,
Qi-Kun Xue,
Ke He,
Yang Feng,
Xiao Feng
Abstract:
The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. I…
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The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states.
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Submitted 9 June, 2024;
originally announced June 2024.
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Tunably-polarized driving light controls the phase diagram of 1D quasicrystals and 2D quantum Hall matter
Authors:
Yifei Bai,
David M. Weld
Abstract:
The well-known mapping between 1D quasiperiodic systems and 2D integer quantum Hall matter can also be applied in the presence of driving. Here we explore the effect of time-varying electric fields on the transport properties and phase diagram of Harper-Hofstadter materials. We consider light of arbitrary polarization illuminating a 2D electron gas at high magnetic field; this system maps to a 1D…
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The well-known mapping between 1D quasiperiodic systems and 2D integer quantum Hall matter can also be applied in the presence of driving. Here we explore the effect of time-varying electric fields on the transport properties and phase diagram of Harper-Hofstadter materials. We consider light of arbitrary polarization illuminating a 2D electron gas at high magnetic field; this system maps to a 1D quasicrystal subjected to simultaneous phasonic and dipolar driving. We show that this generalized driving generates a tessellated phase diagram featuring a nested duality-protected pattern of metal-insulator transitions. Circularly or elliptically polarized light can create an extended critical phase, opening up a new route to achieving wavefunction multifractality without fine-tuning to a critical point. We describe in detail a path to experimental realization of these phenomena using lattice-trapped ultracold atoms.
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Submitted 18 March, 2025; v1 submitted 3 June, 2024;
originally announced June 2024.
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Measuring a localization phase diagram controlled by the interplay of disorder and driving
Authors:
Peter Dotti,
Yifei Bai,
Toshihiko Shimasaki,
Anna R. Dardia,
David M. Weld
Abstract:
The interplay of various localizing mechanisms is a central topic of modern condensed matter physics. In this work we experimentally explore the interplay between quasiperiodic disorder and periodic driving, each of which in isolation is capable of driving a metal-insulator phase transition. Using a 1D quasiperiodic cold-atom chain we measure transport across the full phase diagram varying both dr…
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The interplay of various localizing mechanisms is a central topic of modern condensed matter physics. In this work we experimentally explore the interplay between quasiperiodic disorder and periodic driving, each of which in isolation is capable of driving a metal-insulator phase transition. Using a 1D quasiperiodic cold-atom chain we measure transport across the full phase diagram varying both drive strength and quasidisorder strength. We observe lobes of metallic phases bounded by quantum phase transitions which depend on both drive and disorder. While these observations are broadly consistent with expectations from a high-drive-frequency theoretical model, we also observe clear departures from the predictions of this model, including anomalous changes in localization behavior at lower drive frequency. We demonstrate experimentally and theoretically that understanding the full measured phase diagram requires an extension to commonly-used approximate theories of Floquet matter.
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Submitted 15 November, 2024; v1 submitted 31 May, 2024;
originally announced June 2024.
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Evidence of Ferroelectricity in an Antiferromagnetic Vanadium Trichloride Monolayer
Authors:
Jinghao Deng,
Deping Guo,
Yao Wen,
Shuangzan Lu,
Hui Zhang,
Zhengbo Cheng,
Zemin Pan,
Tao Jian,
Dongyu Li,
Hao Wang,
Yusong Bai,
Zhilin Li,
Wei Ji,
Jun He,
Chendong Zhang
Abstract:
A reduced dimensionality of multiferroic materials is highly desired for device miniaturization, but the coexistence of ferroelectricity and magnetism at the two-dimensional limit is yet to be conclusively demonstrated. Here, we used a NbSe2 substrate to break both the C3 rotational and inversion symmetries in monolayer VCl3 and thus introduced exceptional in-plane ferroelectricity into a two-dime…
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A reduced dimensionality of multiferroic materials is highly desired for device miniaturization, but the coexistence of ferroelectricity and magnetism at the two-dimensional limit is yet to be conclusively demonstrated. Here, we used a NbSe2 substrate to break both the C3 rotational and inversion symmetries in monolayer VCl3 and thus introduced exceptional in-plane ferroelectricity into a two-dimensional magnet. Scanning tunneling spectroscopy directly visualized ferroelectric domains and manipulated their domain boundaries in monolayer VCl3, where coexisting antiferromagnetic order with canted magnetic moments was verified by vibrating sample magnetometer measurements. Our density functional theory calculations highlight the crucial role that highly directional interfacial Cl-Se interactions play in breaking the symmetries and thus in introducing in-plane ferroelectricity, which was further verified by examining an ML-VCl3/graphene sample. Our work demonstrates an approach to manipulate the ferroelectric states in monolayered magnets through van der Waals interfacial interactions.
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Submitted 11 June, 2025; v1 submitted 20 April, 2024;
originally announced April 2024.
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Interplay between electronic dephasing and localization in finite-sized Chern insulator
Authors:
Yunhe Bai,
Yuanzhao Li,
Jianli Luan,
Yang Chen,
Zongwei Gao,
Wenyu Song,
Yitian Tong,
Jinsong Zhang,
Yayu Wang,
Junjie Qi,
Chui-Zhen Chen,
Hua Jiang,
X. C. Xie,
Ke He,
Yang Feng,
Xiao Feng,
Qi-Kun Xue
Abstract:
Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a…
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Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.
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Submitted 13 April, 2024;
originally announced April 2024.
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Topology-engineered orbital Hall effect in two-dimensional ferromagnets
Authors:
Zhiqi Chen,
Runhan Li,
Yingxi Bai,
Ning Mao,
Mahmoud Zeer,
Dongwook Go,
Ying Dai,
Baibiao Huang,
Yuriy Mokrousov,
Chengwang Niu
Abstract:
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrat…
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Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics.
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Submitted 11 April, 2024;
originally announced April 2024.
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Yu-Shiba-Rusinov states in the s-wave superconducting kagome Hubbard model: Self-consistent Bogoliubov-de Gennes calculations
Authors:
Shuaibo Ding,
Yunfei Bai,
A. A. Bulekov,
Wenhui Zhang,
A. A. Shanenko,
Yajiang Chen
Abstract:
Significant research has recently been conducted into the Yu-Shiba-Rusinov (YSR) states in kagome superconductors through theoretical modeling and experimental investigations. However, additional efforts are still needed to further understand the local superconductivity near magnetic impurities in the kagome lattice and clarify how relevant quantities depend on the interaction strength $J$ between…
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Significant research has recently been conducted into the Yu-Shiba-Rusinov (YSR) states in kagome superconductors through theoretical modeling and experimental investigations. However, additional efforts are still needed to further understand the local superconductivity near magnetic impurities in the kagome lattice and clarify how relevant quantities depend on the interaction strength $J$ between such impurities and electrons. In this study, we explore a self-consistent numerical solution of the Bogoliubov-de Gennes equations for an $s$-wave superconducting kagome model with a single classical magnetic impurity. Our study reveals that with increasing $J$, the local pair potential is systematically depressed in the vicinity of the impurity, similar to previous results obtained for the square and triangular lattices. Moreover, when further increasing $J$, the system undergoes a first-order phase transition with the appearance of stable and metastable states, reflecting the presence of the hysteresis loop in the pertinent quantities. As a consequence of this transition, the minimal energy of the stable YSR state is nonzero at any $J$, contrary to the expectations based on the assumption of a constant pair potential. A distinctive feature of the kagome lattice is that characteristics of the first-order transition are very sensitive to the position of the chemical potential within the kagome energy spectrum.
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Submitted 30 August, 2024; v1 submitted 10 March, 2024;
originally announced March 2024.
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Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films
Authors:
Yang Shi,
Yunhe Bai,
Yuanzhao Li,
Yang Feng,
Qiang Li,
Huanyu Zhang,
Yang Chen,
Yitian Tong,
Jianli Luan,
Ruixuan Liu,
Pengfei Ji,
Zongwei Gao,
Hangwen Guo,
Jinsong Zhang,
Yayu Wang,
Xiao Feng,
Ke He,
Xiaodong Zhou,
Jian Shen
Abstract:
We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial…
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We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.
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Submitted 23 January, 2024;
originally announced January 2024.
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Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yuanzhao Li,
Yunhe Bai,
Yang Feng,
Jianli Luan,
Zongwei Gao,
Yang Chen,
Yitian Tong,
Ruixuan Liu,
Su Kong Chong,
Kang L. Wang,
Xiaodong Zhou,
Jian Shen,
Jinsong Zhang,
Yayu Wang,
Chui-Zhen Chen,
XinCheng Xie,
Xiao Feng,
Ke He,
Qi-Kun Xue
Abstract:
In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the…
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In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.
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Submitted 21 January, 2024;
originally announced January 2024.
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Reversible phasonic control of a quantum phase transition in a quasicrystal
Authors:
Toshihiko Shimasaki,
Yifei Bai,
H. Esat Kondakci,
Peter Dotti,
Jared E. Pagett,
Anna R. Dardia,
Max Prichard,
André Eckardt,
David M. Weld
Abstract:
Periodic driving can tune the quasistatic properties of quantum matter. A well-known example is the dynamical modification of tunneling by an oscillating electric field. Here we show experimentally that driving the phasonic degree of freedom of a cold-atom quasicrystal can continuously tune the effective quasi-disorder strength, reversibly toggling a localization-delocalization quantum phase trans…
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Periodic driving can tune the quasistatic properties of quantum matter. A well-known example is the dynamical modification of tunneling by an oscillating electric field. Here we show experimentally that driving the phasonic degree of freedom of a cold-atom quasicrystal can continuously tune the effective quasi-disorder strength, reversibly toggling a localization-delocalization quantum phase transition. Measurements agree with fit-parameter-free theoretical predictions, and illuminate a fundamental connection between Aubry-André localization in one dimension and dynamic localization in the associated two-dimensional Harper-Hofstadter model. These results open up new experimental possibilities for dynamical coherent control of quantum phase transitions.
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Submitted 1 December, 2023;
originally announced December 2023.
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Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping
Authors:
Shuang Pan,
Yuqing Bai,
Jiaxuan Tang,
Peihao Wang,
Yurong You,
Guizhou Xu,
Feng Xu
Abstract:
CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation…
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CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation density that facilitates movement of the domain walls. In addition, the introduction of the doping element Mn allows higher saturation magnetization intensity. Cr0.5V0.5I3 exhibits substantially increased coercivity force and larger magnetocrystalline anisotropy compared to CrI3, while kept similar Curie temperature and good environmental stability. The first principles calculations suggest direct and narrowed band gaps in Cr0.5V0.5I3 and VI3 comparing to CrI3. The smaller band gaps and good hard magnetic property make Cr0.5V0.5I3 an alternative choice to future research of spintronic devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals
Authors:
Yuqing Bai,
Shuang Pan,
Ziqian Lu,
Yuanyuan Gong,
Guizhou Xu,
Feng Xu
Abstract:
CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of…
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CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10K, 9T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them.
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Submitted 30 November, 2023;
originally announced November 2023.
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Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys
Authors:
Cheng Zhang,
Shuang Pan,
Peihao Wang,
Yuchen Men,
Xiang Li,
Yuqing Bai,
Li Tang,
Feng Xu,
Guizhou Xu
Abstract:
Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature inte…
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Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature interval, accompanying with growing contribution from the ordinary Hall effect. As a result, comparatively low carrier density (1020 cm-3) and high carrier mobility (150 cm2/Vs) are obtained in Mn2CoGa (or x=0.25) alloy in the temperature range of 10-200K. These also lead to a large dip in the related magnetoresistance at low fields. While in high Al content, despite the magnetization behavior is not altered significantly, the Hall resistivity is instead dominated by the anomalous one, just analogous to that widely reported in Mn2CoAl. The distinct electrical transport behavior of x=0 and x=0.75 (or 1) is presently understood by their possible different scattering mechanism of the anomalous Hall effect due to the differences in atomic order and conductivity. Our work can expand the existing understanding of the SGS properties and offer a better SGS candidate with higher carrier mobility that can facilitate the application in the spin-injected related devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Ab initio self-trapped excitons
Authors:
Yunfei Bai,
Yaxian Wang,
Sheng Meng
Abstract:
We propose a new formalism and an effective computational framework to study self-trapped excitons (STE) in insulators and semiconductors from first principles. Using the many-body Bethe-Salpeter equation in combination with perturbation theory, we are able to obtain the mode- and momentum-resolved exciton-phonon coupling matrix element in a perturbative scheme, and explicitly solve the real space…
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We propose a new formalism and an effective computational framework to study self-trapped excitons (STE) in insulators and semiconductors from first principles. Using the many-body Bethe-Salpeter equation in combination with perturbation theory, we are able to obtain the mode- and momentum-resolved exciton-phonon coupling matrix element in a perturbative scheme, and explicitly solve the real space localization of the electron (hole), as well as the lattice distortion. Further, this method allows to compute the STE potential energy surface and evaluate the STE formation energy and Stokes shift. We demonstrate our approach using two-dimensional magnetic semiconductor chromium trihalides and a wide-gap insulator BeO, the latter of which features dark excitons, and make predictions of their Stokes shift and coherent phonon generation which we hope to spark future experiments such as photoluminescence and transient absorption studies.
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Submitted 21 November, 2023;
originally announced November 2023.
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Realization of multiple topological states and topological phase transitions in (4,0) carbon nanotube derivatives
Authors:
Yan Gao,
Yu Du,
Yun-Yun Bai,
Weikang Wu,
Qiang Wang,
Yong Liu,
Kai Liu,
Zhong-Yi Lu
Abstract:
Exploring various topological states (TS) and topological phase transitions (TPT) has attracted great attention in condensed matter physics. However, so far, there is rarely a typical material system that can be used as a platform to study the TS and TPT as the system transforms from one-dimensional (1D) nanoribbons to two-dimensional (2D) sheet then to three-dimensional (3D) bulk. Here, we first…
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Exploring various topological states (TS) and topological phase transitions (TPT) has attracted great attention in condensed matter physics. However, so far, there is rarely a typical material system that can be used as a platform to study the TS and TPT as the system transforms from one-dimensional (1D) nanoribbons to two-dimensional (2D) sheet then to three-dimensional (3D) bulk. Here, we first propose that some typical TS in 1D, 2D, and 3D systems can be realized in a tight-binding (TB) model. Following the TB model and further based on first-principles electronic structure calculations, we demonstrate that the structurally stable (4,0) carbon nanotube derivatives are an ideal platform to explore the semiconductor/nodal-point semimetal states in 1D nanoribbons [1D-(4,0)-C16H4 and 1D-(4,0)-C32H4], nodal-ring semimetal state in 2D sheet [2D-(4,0)-C16], and nodal-cage semimetal state in 3D bulk [3D-(4,0)-C16]. Furthermore, we calculate the characteristic band structures and the edge/surface states of 2D-(4,0)-C16 and 3D-(4,0)-C16 to confirm their nontrivial topological properties. Our work not only provides new excellent 2D and 3D members for the topological carbon material family, but also serves as an ideal template for the study of TS and TPT with the change of system dimension.
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Submitted 8 October, 2023;
originally announced October 2023.
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Tailoring of the interference-induced surface superconductivity by an applied electric field
Authors:
Yunfei Bai,
Libo Zhang,
Xiaobing Luo,
A. A. Shanenko,
Yajiang Chen
Abstract:
Nucleation of the pair condensate near surfaces above the upper critical magnetic field and the pair-condensate enhancement/suppression induced by changes in the electron-phonon interaction at interfaces are the most known examples of the surface superconductivity. Recently, another example has been reported, when the surface enhancement of the critical superconducting temperature occurs due to qu…
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Nucleation of the pair condensate near surfaces above the upper critical magnetic field and the pair-condensate enhancement/suppression induced by changes in the electron-phonon interaction at interfaces are the most known examples of the surface superconductivity. Recently, another example has been reported, when the surface enhancement of the critical superconducting temperature occurs due to quantum interference. In this case the pair states spread over the entire volume of the system while exhibiting the constructive interference near the surface. In the present work we investigate how an applied electric field impacts the interference-induced surface superconductivity. The study is based on a numerical solution of the self-consistent Bogoliubov-de Gennes equations for a one-dimensional attractive Hubbard model. Our results demonstrate that the surface superconducting characteristics, especially the surface critical temperature, are sensitive to the applied electric field and can be tailored by changing its magnitude.
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Submitted 31 July, 2023;
originally announced July 2023.
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Ferromagnetism and correlated insulating states in monolayer Mo33Te56
Authors:
Zemin Pan,
Wenqi Xiong,
Jiaqi Dai,
Yunhua Wang,
Tao Jian,
Xingxia Cui,
Jinghao Deng,
Xiaoyu Lin,
Zhengbo Cheng,
Yusong Bai,
Chao Zhu,
Da Huo,
Geng Li,
Min Feng,
Jun He,
Wei Ji,
Shengjun Yuan,
Fengcheng Wu,
Chendong Zhang,
Hong-Jun Gao
Abstract:
Kagome lattices have an inherent two-dimensional nature. Despite previous realizations in the monolayer limit, their abilities to drive emergent electronic states such as correlated insulators have remained unobserved. Here, we report the experimental realization of a new structural phase of monolayer Mo33Te56, characterized by its virtually global uniformity as a mirror-twin boundary loop superla…
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Kagome lattices have an inherent two-dimensional nature. Despite previous realizations in the monolayer limit, their abilities to drive emergent electronic states such as correlated insulators have remained unobserved. Here, we report the experimental realization of a new structural phase of monolayer Mo33Te56, characterized by its virtually global uniformity as a mirror-twin boundary loop superlattice embedded in an H-MoTe2 monolayer. Through a combination of scanning tunnelling microscopy (STM) and theoretical calculations, we unveil a kagome geometry along with multiple associated sets of kagome flat bands. Crucially, the partial filling of these kagome bands induces ferromagnetism as revealed by spin-polarized STM, and leads to a correlated insulating state exhibiting a hard gap as large as 15 meV. Our findings represent a major advance in kagome materials, offering a framework with clearer band structures and more intrinsic two-dimensional properties for exploring flat-band physics.
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Submitted 14 July, 2024; v1 submitted 12 July, 2023;
originally announced July 2023.
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Surface superconductor-insulator transition induced by an electric field
Authors:
Liyu Yin,
Yunfei Bai,
Ming Zhang,
A. A. Shanenko,
Yajiang Chen
Abstract:
It is well-known that the electric field can induce phase transitions between superconducting, metallic and insulating states in thin-film materials due to its control of the charge carrier density. Since a similar effect on the charge carriers can also be expected for surfaces of bulk samples, here we investigate the transformation of the surface states in a superconductor under an applied screen…
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It is well-known that the electric field can induce phase transitions between superconducting, metallic and insulating states in thin-film materials due to its control of the charge carrier density. Since a similar effect on the charge carriers can also be expected for surfaces of bulk samples, here we investigate the transformation of the surface states in a superconductor under an applied screened electric field. Our study is performed by numerically solving the self-consistent Bogoliubov-de Gennes equations for the one-dimensional attractive Hubbard model. It is found that the surface insulating regime occurs at sufficiently large (but still experimentally accessible) electric fields. Our calculations yield the phase diagram of the surface superconducting, metallic, and insulating states for a wide range of temperatures and applied fields. Our results are in qualitative agreement with the phase diagram obtained by the transport measurements for (Li, Fe)OHFeSe thin flakes [Sci. Bull. 64, 653 (2019); ACS Nano 14, 7513 (2020)].
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Submitted 27 June, 2023;
originally announced June 2023.
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Voltage-tunable giant nonvolatile multiple-state resistance in sliding-interlayer ferroelectric h-BN van der Waals multiferroic tunnel junction
Authors:
Xinlong Dong,
Xuemin Shen,
Xiaowen Sun,
Yuhao Bai,
Zhi Yan,
Xiaohong Xu
Abstract:
Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The recently discovered sliding ferroelectricity in 2D van der Waals materials has opened new avenues for ferroelectric-based devices. Here, we theoretically investigate…
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Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The recently discovered sliding ferroelectricity in 2D van der Waals materials has opened new avenues for ferroelectric-based devices. Here, we theoretically investigate the spin-dependent electronic transport properties of Fe$_3$GeTe$_2$/graphene/bilayer-$h$-BN/graphene/CrI$_3$ (FGT/Gr-BBN-Gr/CrI) all-vdW MFTJs by employing the nonequilibrium Green's function combined with density functional theory. We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJs exhibit four non-volatile resistance states associated with different staking orders of sliding ferroelectric BBN and magnetization alignment of ferromagnetic free layer CrI$_3$, with a maximum tunnel magnetoresistance (electroresistance) ratio, i.e., TMR (TER) up to $\sim$$3.36\times10^{4}$\% ($\sim$$6.68\times10^{3}$\%) at a specific bias voltage. Furthermore, the perfect spin filtering and remarkable negative differential resistance effects are evident in our MFTJs. We further discover that the TMR, TER, and spin polarization ratio under an equilibrium state can be enhanced by the application of in-plane biaxial strain. This work shows that the giant tunneling resistance ratio, multiple resistance states, and excellent spin-polarized transport properties of sliding ferroelectric BBN-based MFTJs indicate its significant potential in nonvolatile memories.
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Submitted 22 August, 2023; v1 submitted 10 May, 2023;
originally announced May 2023.
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Thermodynamic engine with a quantum degenerate working fluid
Authors:
Ethan Q. Simmons,
Roshan Sajjad,
Kimberlee Keithley,
Hector Mas,
Jeremy L. Tanlimco,
Eber Nolasco-Martinez,
Yifei Bai,
Glenn H. Fredrickson,
David M. Weld
Abstract:
Can quantum mechanical thermodynamic engines outperform their classical counterparts? To address one aspect of this question, we experimentally realize and characterize an isentropic thermodynamic engine that uses a Bose-condensed working fluid. In this engine, an interacting quantum degenerate gas of bosonic lithium is subjected to trap compression and relaxation strokes interleaved with strokes…
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Can quantum mechanical thermodynamic engines outperform their classical counterparts? To address one aspect of this question, we experimentally realize and characterize an isentropic thermodynamic engine that uses a Bose-condensed working fluid. In this engine, an interacting quantum degenerate gas of bosonic lithium is subjected to trap compression and relaxation strokes interleaved with strokes strengthening and weakening interparticle interactions. We observe a significant enhancement in efficiency and power when using a Bose-condensed working fluid, compared to the case of a non-degenerate thermal gas. We demonstrate reversibility, and measure power and efficiency as a function of engine parameters including compression ratio and cycle time. Results agree quantitatively with interacting finite temperature field-theoretic simulations that closely replicate the length and energy scales of the working fluid.
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Submitted 20 April, 2023; v1 submitted 2 April, 2023;
originally announced April 2023.
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Interference-induced surface superconductivity:Enhancement by tuning the Debye energy
Authors:
Yunfei Bai,
Yajiang Chen,
M. D. Croitoru,
A. A. Shanenko,
Xiaobing Luo,
Yunbo Zhang
Abstract:
In the usual perception, surface superconductivity is associated with the surface nucleation of a superconducting condensate above the upper critical field in type-II superconductors or with a rearrangement of phonon properties and the electron-phonon coupling near surfaces/interfaces. Recently, it has been found that there is another example when the surface superconducting temperature is increas…
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In the usual perception, surface superconductivity is associated with the surface nucleation of a superconducting condensate above the upper critical field in type-II superconductors or with a rearrangement of phonon properties and the electron-phonon coupling near surfaces/interfaces. Recently, it has been found that there is another example when the surface superconducting temperature is increased up to 20-25% as compared to the bulk one due to constructive interference of superconducting pair states. In the present work, we demonstrate that in fact, such an interferenceinduced enhancement can be much more pronounced, up to nearly 70%. Furthermore, here it is shown that such an interference enhancement persists over a wide range of microscopic parameters.
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Submitted 30 January, 2023;
originally announced January 2023.
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Realization of multiple charge density waves in NbTe2 at the monolayer limit
Authors:
Yusong Bai,
Zemin Pan,
Jinghao Deng,
Xiaoyu Lin,
Tao Jian,
Chao Zhu,
Da Huo,
Zhengbo Cheng,
Ping Cui,
Zhenyu Zhang,
Qiang Zou,
Chendong Zhang
Abstract:
Abstract: Layered transition-metal dichalcogenides (TMDCs) down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Though bulk NbTe2 is known to harbor a single axis 3*1 CDW coexisting with non-trivial quantum properties, the scenario in the ML limit is still experimentally unknown. In this study, we unveil the richness of the CDW phases in ML NbTe2,…
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Abstract: Layered transition-metal dichalcogenides (TMDCs) down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Though bulk NbTe2 is known to harbor a single axis 3*1 CDW coexisting with non-trivial quantum properties, the scenario in the ML limit is still experimentally unknown. In this study, we unveil the richness of the CDW phases in ML NbTe2, where not only the theoretically predicted 4*4 and 4*1 phases, but also two unexpected sqrt(28)*sqrt(28) and sqrt(19)*sqrt(19) phases, can be realized. For such a complex CDW system, we establish an exhaustive growth phase diagram via systematic efforts in the material synthesis and scanning tunneling microscope characterization. Moreover, we report that the energetically stable phase is the larger scale order (sqrt(19)*sqrt(19)), which is surprisingly in contradiction to the prior prediction (4*4). These findings are confirmed using two different kinetic pathways, i.e., direct growth at proper growth temperatures (T), and low-T growth followed by high-T annealing. Our results provide a comprehensive diagram of the "zoo" of CDW orders in ML 1T-NbTe2 for the first time and offer a new material platform for studying novel quantum phases in the 2D limit.
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Submitted 11 January, 2023;
originally announced January 2023.
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Superconductivity in CeBeH$_{8}$ and CeBH$_{8}$ at moderate pressures
Authors:
Yu Hou,
Bin Li,
Yan Bai,
Xiaofeng Hao,
Yeqian Yang,
Fengfeng Chi,
Shengli Liu,
Jie Cheng,
Zhixiang Shi
Abstract:
High-pressure structural searches of superhydrides CeBeH$_8$ and CeBH$_8$ were performed under ambient pressure up to 300 GPa. We identify $Fm\overline{3}m$-CeBeH$_8$ with a superconducting transition temperature $T_{c}$ of 56 K at 10 GPa. Two more phases with spacegroup $R\overline{3}m$ and $C2/m$, were investigated within the increasing pressures. CeBH$_8$ shows a similar phase transition proces…
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High-pressure structural searches of superhydrides CeBeH$_8$ and CeBH$_8$ were performed under ambient pressure up to 300 GPa. We identify $Fm\overline{3}m$-CeBeH$_8$ with a superconducting transition temperature $T_{c}$ of 56 K at 10 GPa. Two more phases with spacegroup $R\overline{3}m$ and $C2/m$, were investigated within the increasing pressures. CeBH$_8$ shows a similar phase transition process as CeBeH$_8$ but with higher transition pressures and higher $T_c$. $Fm\overline{3}m$-CeBH$_8$ is predicted to be superconducting above 120 GPa with a maximum $T_{c}$ of 118 K at 150 GPa. $R\overline{3}m$-CeBH$_8$ and $C2/m$-CeBH$_8$ are dynamically stable above 120 GPa and 100 GPa, respectively. The maximum $T_{c}$ is 123 K at 195 GPa for $R\overline{3}m$-CeBH$_8$, and 115 K at 350 GPa for $C2/m$-CeBH$_8$. Our work enriches the family of ternary hydrides and may provide a useful guideline for further search for superconducting hydrides at low and moderate pressures.
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Submitted 30 October, 2022;
originally announced October 2022.
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Interference, diffraction, and diode effects in superconducting array based on Bi0.8Sb1.2Te3 topological insulator
Authors:
Xiangyu Song,
Soorya Suresh-Babu,
Yang Bai,
Dmitry Golubev,
Irina Burkova,
Alexander Romanov,
Eduard Ilin,
James N. Eckstein,
Alexey Bezryadin
Abstract:
It is a well known phenomenon in optics that spectroscopic resolution of a diffraction grating is much better compared to an interference device having just two slits, as in the Young's famous double-slit experiment. On the other hand, it is well known that a classical superconducting quantum interference device (SQUID) is analogous to the optical double-slit experiment. Here we report experiments…
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It is a well known phenomenon in optics that spectroscopic resolution of a diffraction grating is much better compared to an interference device having just two slits, as in the Young's famous double-slit experiment. On the other hand, it is well known that a classical superconducting quantum interference device (SQUID) is analogous to the optical double-slit experiment. Here we report experiments and present a model describing a superconducting analogue to the diffraction grating, namely an array of superconducting islands positioned on a topological insulator (TI) film Bi0.8Sb1.2Te3. In the limit of extremely weak field, of the order of one vortex per the entire array, such devices exhibit a critical current peak that is much sharper than the analogous peak of an ordinary SQUID. Because of this, such arrays can be used as sensitive absolute magnetic field sensors. An important finding is that, due to the inherent asymmetry of such arrays, the device also acts as a superconducting diode.
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Submitted 28 September, 2022;
originally announced September 2022.
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Effect of Pore Formation on Redox-Driven Phase Transformation
Authors:
Xuyang Zhou,
Yang Bai,
Ayman A. El-Zoka,
Se-Ho Kim,
Yan Ma,
Christian H. Liebscher,
Baptiste Gault,
Jaber R. Mianroodi,
Gerhard Dehm,
Dierk Raabe
Abstract:
When solid-state redox-driven phase transformations are associated with mass loss, vacancies are produced that develop into pores. These pores can influence the kinetics of certain redox and phase transformation steps. We investigated the structural and chemical mechanisms in and at pores in a combined experimental-theoretical study, using the reduction of iron oxide by hydrogen as a model system.…
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When solid-state redox-driven phase transformations are associated with mass loss, vacancies are produced that develop into pores. These pores can influence the kinetics of certain redox and phase transformation steps. We investigated the structural and chemical mechanisms in and at pores in a combined experimental-theoretical study, using the reduction of iron oxide by hydrogen as a model system. The redox product (water) accumulates inside the pores and shifts the local equilibrium at the already reduced material back towards re-oxidation into cubic-Fe1-xO (where x refers to Fe deficiency, space group Fm3-m). This effect helps to understand the sluggish reduction of cubic-Fe1-xO by hydrogen, a key process for future sustainable steelmaking.
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Submitted 6 March, 2023; v1 submitted 19 September, 2022;
originally announced September 2022.
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Phase Transitions and Superconductivity in Ternary Hydride Li$_2$SiH$_6$ at High Pressures
Authors:
Sixuan Wu,
Bin Li,
Zhi Chen,
Yu Hou,
Yan Bai,
Xiaofeng Hao,
Yeqian Yang,
Shengli Liu,
Jie Cheng,
Zhixiang Shi
Abstract:
We predicted a new ternary hydride Li$_2$SiH$_6$ at high pressures. A systematic structure search in Li$_2$SiH$_6$ compound reveals novel stable phases with intriguing electronic and phonon properties. It is found that Li$_2$SiH$_6$ is dynamically stable from ambient pressure up to 400 GPa with three novel phases: P312, P$\bar{3}$, and P$\bar{6}$2m. The calculation of electron-phonon coupling comb…
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We predicted a new ternary hydride Li$_2$SiH$_6$ at high pressures. A systematic structure search in Li$_2$SiH$_6$ compound reveals novel stable phases with intriguing electronic and phonon properties. It is found that Li$_2$SiH$_6$ is dynamically stable from ambient pressure up to 400 GPa with three novel phases: P312, P$\bar{3}$, and P$\bar{6}$2m. The calculation of electron-phonon coupling combined with Bardeen-Cooper-Schrieffer's argument indicates that this compound may be a candidate for high $T_c$ superconductors under high pressures. In particular, the maximum $T_c$ of $P\bar{6}2m$-Li$_2$SiH$_6$ at 400 GPa reaches 56 K. These findings may pave the way for obtaining room temperature superconductors in dense hydrogen-rich compounds.
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Submitted 12 September, 2022;
originally announced September 2022.
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Laser-induced forces on atoms during ultrafast demagnetization
Authors:
G. P. Zhang,
Y. H. Bai
Abstract:
Laser-induced femtosecond demagnetization has attracted a broad attention as a possible candidate for information storage technology. However, whether or not lattice vibration directly participates in demagnetization has been highly controversial over a decade. A recent electron diffraction experiment attributed the demagnetization to the polarized phonon effect, but a similar x-ray diffraction ex…
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Laser-induced femtosecond demagnetization has attracted a broad attention as a possible candidate for information storage technology. However, whether or not lattice vibration directly participates in demagnetization has been highly controversial over a decade. A recent electron diffraction experiment attributed the demagnetization to the polarized phonon effect, but a similar x-ray diffraction experiment attributed it to the Einstein-de Haas effect. Common to both experiments is that neither the angular momentum of the lattice nor the rotation of the sample was directly probed. Here, we report our first first-principles calculation of forces on atoms induced by an ultrafast laser during ultrafast demagnetization. We employ two complementary methods: (i) the frozen lattice with electronic excitation and (ii) frozen excitation but moving the lattice. We find that the forces on atoms start at -50 fs and peak around 30 fs. The magnitude of the force is far smaller than the empirical estimates. Within the limit of our theory, our results suggest that the polarized phonon effect and the Einstein-de Haas effect are unlikely to be the main course of demagnetization. We expect that our finding has a profound impact on the future direction of laser-induced dynamics in magnetic and quantum materials.
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Submitted 3 September, 2022;
originally announced September 2022.
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Evolution of the electronic structure of ultrathin MnBi2Te4 Films
Authors:
Runzhe Xu,
Yunhe Bai,
Jingsong Zhou,
Jiaheng Li,
Xu Gu,
Na Qin,
Zhongxu Yin,
Xian Du,
Qinqin Zhang,
Wenxuan Zhao,
Yidian Li,
Yang Wu,
Cui Ding,
Lili Wang,
Aiji Liang,
Zhongkai Liu,
Yong Xu,
Xiao Feng,
Ke He,
Yulin Chen,
Lexian Yang
Abstract:
Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator-type with a large energy gap to on…
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Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator-type with a large energy gap to one with in-gap topological surface states, which is, however, still drastically different from the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.
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Submitted 3 August, 2022;
originally announced August 2022.
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Spin-phonon dispersion in magnetic materials
Authors:
Mingqiang Gu,
Y. H. Bai,
G. P. Zhang,
Thomas F. George
Abstract:
Microscopic coupling between the electron spin and the lattice vibration is responsible for an array of exotic properties from morphic effects in simple magnets to magnetodielectric coupling in multiferroic spinels and hematites. Traditionally, a single spin-phonon coupling constant is used to characterize how effectively the lattice can affect the spin, but it is hardly enough to capture novel el…
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Microscopic coupling between the electron spin and the lattice vibration is responsible for an array of exotic properties from morphic effects in simple magnets to magnetodielectric coupling in multiferroic spinels and hematites. Traditionally, a single spin-phonon coupling constant is used to characterize how effectively the lattice can affect the spin, but it is hardly enough to capture novel electromagnetic behaviors to the full extent. Here, we introduce a concept of spin-phonon dispersion to project the spin moment change along the phonon crystal momentum direction, so the entire spin change can be mapped out. Different from the phonon dispersion, the spin-phonon dispersion has both positive and negative frequency branches {even in the equilibrium ground state}, which correspond to the spin enhancement and spin reduction, respectively. Our study of bcc Fe and hcp Co reveals that the spin force matrix, that is, the second-order spatial derivative of spin moment, is similar to the vibrational force matrix, but its diagonal elements are smaller than the off-diagonal ones. This leads to the distinctive spin-phonon dispersion. The concept of spin-phonon dispersion expands the traditional Elliott-Yafet theory in nonmagnetic materials to the entire Brillouin zone in magnetic materials, thus opening the door to excited states in systems such as CoF$_2$ and NiO, where a strong spin-lattice coupling is detected in the THz regime.
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Submitted 21 July, 2022;
originally announced July 2022.
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First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa
Authors:
G. P. Zhang,
Y. H. Bai,
M. S. Si,
Thomas F. George
Abstract:
All-optical spin switching (AOS) represents a new frontier in magnetic storage technology -- spin manipulation without a magnetic field, -- but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn$_2$RuGa presents an opportunity. Here we carr…
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All-optical spin switching (AOS) represents a new frontier in magnetic storage technology -- spin manipulation without a magnetic field, -- but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn$_2$RuGa presents an opportunity. Here we carry out hitherto the comprehensive density functional investigation into the material properties of Mn$_2$RuGa, and introduce two concepts - the spin anchor site and the optical active site - as two pillars for AOS in ferrimagnets. In Mn$_2$RuGa, Mn$(4a)$ serves as the spin anchor site, whose band structure is below the Fermi level and has a strong spin moment, while Mn$(4c)$ is the optical active site whose band crosses the Fermi level. Our magneto-optical Kerr spectrum and band structure calculation jointly reveal that the delicate competition between the Ru-$4d$ and Ga-$4p$ states is responsible for the creation of these two sites. These two sites found here not only present a unified picture for both Mn$_2$RuGa and GdFeCo, but also open the door for the future applications. Specifically, we propose a Mn$_2$Ru$_x$Ga-based magnetic tunnel junction where a single laser pulse can control magnetoresistance.
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Submitted 21 July, 2022;
originally announced July 2022.
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Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Authors:
Yusong Bai,
Yiliu Li,
Song Liu,
Yinjie Guo,
Jordan Pack,
Jue Wang,
Cory R. Dean,
James Hone,
X. -Y. Zhu
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over…
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Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moiré traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.
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Submitted 3 August, 2023; v1 submitted 19 July, 2022;
originally announced July 2022.
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Controllable dimensionality conversion between 1D and 2D CrCl3 magnetic nanostructures
Authors:
Shuangzan Lu,
Deping Guo,
Zhengbo Cheng,
Yanping Guo,
Cong Wang,
Jinghao Deng,
Yusong Bai,
Cheng Tian,
Linwei Zhou,
Youguo Shi,
Jun He,
Wei Ji,
Chendong Zhang
Abstract:
The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cell-width CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals…
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The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cell-width CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe2. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl3 phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl3 phases.
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Submitted 30 April, 2023; v1 submitted 6 July, 2022;
originally announced July 2022.
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Ultra-fast synthesis and thermodynamic analysis of MoAlB by self-propagating high temperature combustion synthesis
Authors:
Hang Yin,
Xiaodong He,
Guangping Song,
Yongdong Yu,
Yongting Zheng,
Yuelei Bai
Abstract:
MoAlB as a typical member of the MAB phases has attracted much growing attention due to its unique properties. However, the low production of MoAlB powders limits its further development and potential applications. To respond this challenge, the ultra-fast preparation of high-purity MoAlB powders is achieved in a few seconds by self-propagating high temperature combustion synthesis (SHS) using the…
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MoAlB as a typical member of the MAB phases has attracted much growing attention due to its unique properties. However, the low production of MoAlB powders limits its further development and potential applications. To respond this challenge, the ultra-fast preparation of high-purity MoAlB powders is achieved in a few seconds by self-propagating high temperature combustion synthesis (SHS) using the raw powder mixture at the atomic ratio of 1Mo/1.3Al/1B. The reaction mechanism in SHS process was obtained by analyzing the corresponding composition changes of starting materials. Furthermore, the thermodynamic prediction for the SHS reaction of Mo + (1+y)Al + B = MoAlB + yAl is consistent with the present experiments, where the preparation of MoAlB also conforms to two common self-propagating conditions of SHS. Enthalpy vs temperature curve shows that the adiabatic temperature of the reaction decreases with increasing the amount of excuse Al, but increase when pre-heating the reactants. The thermodynamic calculation method also provides a new idea for the preparation of other MAB phases by SHS.
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Submitted 27 June, 2022;
originally announced June 2022.
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Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yunhe Bai,
Yuanzhao Li,
Jianli Luan,
Ruixuan Liu,
Wenyu Song,
Yang Chen,
Peng-Fei Ji,
Qinghua Zhang,
Fanqi Meng,
Bingbing Tong,
Lin Li,
Yuying Jiang,
Zongwei Gao,
Lin Gu,
Jinsong Zhang,
Yayu Wang,
Qi-Kun Xue,
Ke He,
Yang Feng,
Xiao Feng
Abstract:
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the qua…
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The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.
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Submitted 17 April, 2023; v1 submitted 8 June, 2022;
originally announced June 2022.
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Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers
Authors:
Qinqin Wang,
Jian Tang,
Xiaomei Li,
Jinpeng Tian,
Jing Liang,
Na Li,
Depeng Ji,
Lede Xian,
Yutuo Guo,
Lu Li,
Qinghua Zhang,
Yanbang Chu,
Zheng Wei,
Yanchong Zhao,
Luojun Du,
Hua Yu Xuedong Bai,
Lin Gu,
Kaihui Liu,
Wei Yang,
Rong Yang,
Dongxia Shi,
Guangyu Zhang
Abstract:
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and cur…
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Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
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Submitted 17 March, 2022;
originally announced March 2022.