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Quantum oscillations of holes in GaN
Authors:
Chuan F. C. Chang,
Joseph E. Dill,
Zexuan Zhang,
Jie-Cheng Chen,
Naomi Pieczulewski,
Samuel J. Bader,
Oscar Ayala Valenzuela,
Scott A. Crooker,
Fedor F. Balakirev,
Ross D. McDonald,
Jimy Encomendero,
David A. Muller,
Feliciano Giustino,
Debdeep Jena,
Huili Grace Xing
Abstract:
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transpor…
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GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.
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Submitted 27 January, 2025;
originally announced January 2025.
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Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
Authors:
Samuel James Bader,
Reet Chaudhuri,
Martin Schubert,
Han Wui Then,
Huili Grace Xing,
Debdeep Jena
Abstract:
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the…
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To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.
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Submitted 12 June, 2019;
originally announced June 2019.
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A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Authors:
Reet Chaudhuri,
Samuel James Bader,
Zhen Chen,
David A. Muller,
Huili,
Xing,
Debdeep Jena
Abstract:
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction. The measured 2D hole gas densities,…
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The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction. The measured 2D hole gas densities, about $4 \times 10^{13}$ cm$^{-2}$, are among the highest among all known semiconductors and remain unchanged down to cryogenic temperatures. Some of the lowest sheet resistances of all wide-bandgap semiconductors are seen. The observed results provide a new probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces, and simultaneously enable the missing component for gallium nitride-based p-channel transistors for energy-efficient electronics.
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Submitted 23 July, 2018;
originally announced July 2018.
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Coherence and Decay of Higher Energy Levels of a Superconducting Transmon Qubit
Authors:
Michael J. Peterer,
Samuel J. Bader,
Xiaoyue Jin,
Fei Yan,
Archana Kamal,
Ted Gudmundsen,
Peter J. Leek,
Terry P. Orlando,
William D. Oliver,
Simon Gustavsson
Abstract:
We present measurements of coherence and successive decay dynamics of higher energy levels of a superconducting transmon qubit. By applying consecutive $π$-pulses for each sequential transition frequency, we excite the qubit from the ground state up to its fourth excited level and characterize the decay and coherence of each state. We find the decay to proceed mainly sequentially, with relaxation…
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We present measurements of coherence and successive decay dynamics of higher energy levels of a superconducting transmon qubit. By applying consecutive $π$-pulses for each sequential transition frequency, we excite the qubit from the ground state up to its fourth excited level and characterize the decay and coherence of each state. We find the decay to proceed mainly sequentially, with relaxation times in excess of 20 $μ$s for all transitions. We also provide a direct measurement of the charge dispersion of these levels by analyzing beating patterns in Ramsey fringes. The results demonstrate the feasibility of using higher levels in transmon qubits for encoding quantum information.
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Submitted 12 December, 2014; v1 submitted 21 September, 2014;
originally announced September 2014.
