Showing 1–9 of 9 results for author: Bac, S

Spectral analysis of the magneto-optical response in valley polarized Pb$_{1-x}$Sn$_x$Se

Authors: Xiaoqi Ding, Jiashu Wang, Mykhaylo Ozerov, Sara Bey, Muhsin Abdul Karim, Seul-Ki Bac, Xinyu Liu, Badih A. Assaf, Yi-Ting Hsu, Xiao Li

Abstract: Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone, yielding a valley degeneracy of four. However, in (111)-oriented films, it is still not fully understood how differences between the longitudinal valley, orient… ▽ More Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone, yielding a valley degeneracy of four. However, in (111)-oriented films, it is still not fully understood how differences between the longitudinal valley, oriented along the growth axis, and the oblique valleys, oriented at an angle with respect to that axis, appear in infrared magneto-optical spectroscopy. In this work, we report a magneto-optical study on this family of alloys, focusing on an anomaly in the interband transition of the absorption strength ratio between longitudinal and oblique valleys under a magnetic field applied along the [111] direction. Based on the Mitchell-Wallis model, we provide a theoretical fit for the experimental transmission data, which quantitatively explains the spectral shape of the data at magnetic fields as high as 35T. In particular, we attribute this anomalous absorption strength variation to the carrier density difference between the two types of valleys as well as the field-dependent multiple-beam interference or the Fabry-Pérot interference. Our analysis also allows for the extraction of the real and imaginary parts of the dielectric function. △ Less

Submitted 9 May, 2025; v1 submitted 18 June, 2024; originally announced June 2024.

Comments: 16 pages, 15 figures. Comments are welcome

Journal ref: Phys. Rev. B 111, 205302 (2025)

Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism

Authors: Seul-Ki Bac, Florian le Mardelé, Jiashu Wang, Mykhaylo Ozerov, Kota Yoshimura, Ivan Mohelský, Xingdan Sun, Benjamin Piot, Stefan Wimmer, Andreas Ney, Tatyana Orlova, Maksym Zhukovskyi, Günther Bauer, Gunther Springholz, Xinyu Liu, Milan Orlita, Kyungwha Park, Yi-Ting Hsu, Badih A. Assaf

Abstract: Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can ide… ▽ More Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can identify the bands and momenta responsible for the underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First, the relevant inter-band transitions usually generate MCD in the infrared (IR) range, requiring large samples with high quality. Second, while most magnetic materials are metallic, the relation between MCD and BC in metals remains unclear. Here, we report the observation of MCD in the IR range along with the anomalous Hall effect in thin film MnBi2Te4. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via BC in a metal, we show that this transition accompanies an abrupt onset of BC, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of BC away from the commonly considered Γ point. Our findings demonstrate a novel experimental approach for detecting BC and identifying the responsible bands and momenta, generally applicable to magnetic materials. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Energy gap of topological surface states in proximity to a magnetic insulator

Authors: Jiashu Wang, Tianyi Wang, Mykhaylo Ozerov, Zhan Zhang, Joaquin Bermejo-Ortiz, Seul-Ki Bac, Hoai Trinh, Maksym Zhukovskyi, Tatyana Orlova, Haile Ambaye, Jong Keum, Louis-Anne de Vaulchier, Yves Guldner, Dmitry Smirnov, Valeria Lauter, Xinyu Liu, Badih A. Assaf

Abstract: Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topolo… ▽ More Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level. △ Less

Submitted 13 September, 2023; v1 submitted 15 July, 2022; originally announced July 2022.

Comments: 10.1038/s42005-023-01327-5

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Authors: Jiashu Wang, William Powers, Zhan Zhang, Michael Smith, Bradlee J. McIntosh, Seul-Ki Bac, Logan Riney, Maksym Zhukovskyi, Tatyana Orlova, Leonid P. Rokhinson, Yi-Ting Hsu, Xinyu Liu, Badih A. Assaf

Abstract: Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and supercond… ▽ More Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and superconducting fluctuations above the critical temperature Tc. An analysis of the normal state magnetoresistance reveals these effects. Weak localization is consistently observed in superconducting samples, indicating that superconductivity originates dominantly from trivial valence band states that may be strongly spin-orbit split. A large enhancement of the conductivity is observed above Tc, indicating that quantum coherent quasiparticle effects coexist with superconducting fluctuations. Our results motivate a re-examination of the debated pairing symmetry of this material when subjected to quantum confinement and lattice strain. △ Less

Submitted 2 December, 2021; originally announced December 2021.

Comments: Manuscript in review

Fermi level tuning and band alignment in Mn doped InAs/GaSb

Authors: Logan Riney, Joaquin Bermejo-Ortiz, Gauthier Krizman, Seul-Ki Bac, Jiashu Wang, Maksym Zhukovskyi, Tatyana Orlova, Louis Anne de Vaulchier, Yves Guldner, Roland Winkler, Jacek K. Furdyna, Xinyu Liu, Badih A. Assaf

Abstract: InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali… ▽ More InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character. △ Less

Submitted 29 November, 2021; originally announced November 2021.

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Authors: Ying Wang, Xinyu Liu, Seul-Ki Bac, Jacek K. Furdyna, Badih A. Assaf, Maksym Zhukovskyi, Tatyana Orlova, Neil R Dilley, Leonid P. Rokhinson

Abstract: We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements re… ▽ More We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. △ Less

Submitted 17 June, 2021; originally announced June 2021.

Comments: 19pages,13 figures

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Authors: S. -K. Bac, K. Koller, F. Lux, J. Wang, L. Riney, K. Borisiak, W. Powers, M. Zhukovskyi, T. Orlova, M. Dobrowolska, J. K. Furdyna, N. R. Dilley, L. P. Rokhinson, Y. Mokrousov, R. J. McQueeney, O. Heinonen, X. Liu, B. A. Assaf

Abstract: Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul… ▽ More Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases. △ Less

Submitted 20 April, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Materials 7 46 (2022)

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Authors: L. Riney, C. Bunker, S. -K. Bac, J. Wang, D. Battaglia, Yun Chang Park, M. Dobrowolska, J. K. Furdyna, X. Liu, B. A. Assaf

Abstract: SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the s… ▽ More SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

Authors: Jiashu Wang, X. Liu, C. Bunker, L. Riney, B. Qing, S. K. Bac, M. Zhukovskyi, T. Orlova, S. Rouvimov, M. Dobrowolska, J. K. Furdyna, B. A. Assaf

Abstract: We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and b… ▽ More We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: Accepted PRB