-
Solid phase epitaxial growth of the correlated-electron transparent conducting oxide SrVO3
Authors:
Samuel D. Marks,
Lin Lin,
Peng Zuo,
Patrick J. Strohbeen,
Ryan Jacobs,
Dongxue Du,
Jason R. Waldvogel,
Rui Liu,
Donald E. Savage,
John H. Booske,
Jason K. Kawasaki,
Susan E. Babcock,
Dane Morgan,
Paul G. Evans
Abstract:
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resistivity of 2.5 x 10-5 Ohms cm, a residual resistivity ratio of 3.8, and visible light transmission above 0.5 for a 60 nm-thick film. SrVO3 layers were de…
▽ More
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resistivity of 2.5 x 10-5 Ohms cm, a residual resistivity ratio of 3.8, and visible light transmission above 0.5 for a 60 nm-thick film. SrVO3 layers were deposited at room temperature using radio-frequency sputtering in an amorphous form and subsequently crystallized by heating in controlled gas environment. The lattice parameters and mosaic angular width of x-ray reflections from the crystallized films are consistent with partial relaxation of the strain resulting from the epitaxial mismatch between SrVO3 and SrTiO3. A reflection high-energy electron diffraction study of the kinetics of SPE indicates that crystallization occurs via the thermally activated propagation of the crystalline/amorphous interface, similar to SPE phenomena in other perovskite oxides. Thermodynamic calculations based on density functional theory predict the temperature and oxygen partial pressure conditions required to produce the SrVO3 phase and are consistent with the experiments. The separate control of deposition and crystallization conditions in SPE presents new possibilities for the crystallization of transparent conductors in complex geometries and over large areas.
△ Less
Submitted 3 August, 2021; v1 submitted 9 March, 2021;
originally announced March 2021.
-
Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films
Authors:
S. Patnaik,
L. D. Cooley,
A. Gurevich,
A. A. Polyanskii,
J. Jiang,
X. Y. Cai,
A. A. Squitieri,
M. T. Naus,
M. K. Lee,
J. H. Choi,
L. Belenky,
S. D. Bu,
J. Letteri,
X. Song,
D. G. Schlom,
S. E. Babcock,
C. B. Eom,
E. E. Hellstrom,
D. C. Larbalestier
Abstract:
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase d…
▽ More
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
△ Less
Submitted 28 April, 2001;
originally announced April 2001.
-
Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
Authors:
C. B. Eom,
M. K. Lee,
J. H. Choi,
L. Belenky,
X. Song,
L. D. Cooley,
M. T. Naus,
S. Patnaik,
J. Jiang,
M. Rikel,
A. Polyanskii,
A. Gurevich,
X. Y. Cai,
S. D. Bu,
S. E. Babcock,
E. E. Hellstrom,
D. C. Larbalestier,
N. Rogado,
K. A. Regan,
M. A. Hayward,
T. He,
J. S. Slusky,
K. Inumaru,
M. K. Haas,
R. J. Cava
Abstract:
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superco…
▽ More
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superconductors. A vital prerequisite, strongly linked current flow, has already been demonstrated even at this early stage. One possible drawback is the observation that the field at which superconductivity is destroyed is modest. Further, the field which limits the range of practical applications, the irreversibility field H*(T), is ~7 T at liquid helium temperature (4.2 K), significantly lower than ~10 T for Nb-Ti and ~20 T for Nb_3Sn. Here we show that MgB_2 thin films can exhibit a much steeper temperature dependence of H*(T) than is observed in bulk materials, yielding H*(4.2 K) above 14 T. In addition, very high critical current densities at 4.2 K, 1 MA/cm_2 at 1 T and 10_5 A/cm_2 at 10 T, are possible. These data demonstrate that MgB_2 has credible potential for high-field superconducting applications.
△ Less
Submitted 20 March, 2001;
originally announced March 2001.
