Showing 1–11 of 11 results for author: Bürger, D

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

Authors: Shengqiang Zhou, Wenxu Zhang, A. Shalimov, Yutian Wang, Zhisuo Huang, D. Buerger, A. Mücklich, Wanli Zhang, H. Schmidt, M. Helm

Abstract: The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on th… ▽ More The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system. △ Less

Submitted 9 November, 2012; originally announced November 2012.

Comments: 16 pages, 5 figures

Journal ref: Nanoscale Research Letters 2012, 7:528

Substrate effect on the resistive switching in BiFeO3 thin films

Authors: Yao Shuai, Xin Ou, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Buerger, Helfried Reuther, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top… ▽ More BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors. △ Less

Submitted 26 September, 2012; originally announced September 2012.

Comments: 11 pages, 3 figures

Journal ref: J. Appl. Phys. 111, 07D906 (2012)

Control of rectifying and resistive switching behavior in BiFeO3 thin films

Authors: Yao Shuai, Shengqiang Zhou, Chuangui Wu, Wanli Zhang, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies a… ▽ More BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention. △ Less

Submitted 17 August, 2011; originally announced August 2011.

Comments: 13 pages, 3 fitures

Journal ref: Appl. Phys. Express 4 (2011) 095802

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Authors: Yao Shuai, Shengqiang Zhou, Danilo Bürger, Manfred Helm, Heidemarie Schmidt

Abstract: Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two or… ▽ More Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field - induced carriers trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 23 pages, 4 figures, accepted by J. Appl. Phys

Journal ref: J. Appl. Phys. 109, 124117 (2011)

Reduced leakage current in BiFeO3 thin films with rectifying contacts

Authors: Yao Shuai, Shengqiang Zhou, Stephan Streit, Helfried Reuther, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has t… ▽ More BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 15 pages, 4 figures, accepted by Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 98, 232901 (2011)

Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films

Authors: Yao Shuai, Shengqiang Zhou, Danilo Bürger, Helfried Reuther, Ilona Skorupa, Varun John, Manfred Helm, Heidemarie Schmidt

Abstract: Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a lo… ▽ More Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to the formation of bound magnetic polarons (BMPs). This BMP formation is enhanced by oxygen vacancies. The present work confirms a theoretical work from C. Ederer and N. Spaldin on ferroelectric perovskites [Nature Mat. 3, 849 (2004)] which shows that the existence of ferroelectricity is incompatible with the existence of a spontaneous magnetization in Mn-doped BaTiO3 thin films. △ Less

Submitted 27 April, 2011; originally announced April 2011.

Comments: 36 pages, 11 figures

Journal ref: J. Appl. Phys. 109, 084105 (2011)

Tailoring the magnetism of GaMnAs films by ion irradiation

Authors: Lin Li, S. D. Yao, Shengqiang Zhou, D. Bürger, O. Roshchupkina, S. Akhmadaliev, A. W. Rushforth, R. P. Campion, J. Fassbender, M. Helm, B. L. Gallagher, C. Timm, H. Schmidt

Abstract: Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease… ▽ More Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects. △ Less

Submitted 7 December, 2010; originally announced December 2010.

Comments: 15 pages, 4 figures, accepted for publication at J. Phys. D

The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

Authors: Shengqiang Zhou, Danilo Bürger, Wolfgang Skorupa, Peter Oesterlin, Manfred Helm, Heidemarie Schmidt

Abstract: In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferr… ▽ More In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge. △ Less

Submitted 24 May, 2010; originally announced May 2010.

Comments: 7 pages, 3 figures

Journal ref: Appl. Phys. Lett. 96, 202105 (2010)

Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

Authors: Shengqiang Zhou, Danilo Buerger, Arndt Muecklich, Christine Baumgart, Wolfgang Skorupa, Carsten Timm, Peter Oesterlin, Manfred Helm, Heidemarie Schmidt

Abstract: We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistance… ▽ More We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism. △ Less

Submitted 5 April, 2010; originally announced April 2010.

Comments: 14 pages, 7 figures, to be published at Phys. Rev. B (2010)

Journal ref: Phys. Rev. B 81, 165204 (2010)

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Authors: Shengqiang Zhou, Danilo Buerger, Manfred Helm, Heidemarie Schmidt

Abstract: Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a simil… ▽ More Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn. △ Less

Submitted 11 October, 2009; originally announced October 2009.

Comments: 12 pages, 3 figures, accepted for publication at Appl. Phys. Lett. accepted for publication at Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 95, 172103 (2009)

Spin-dependent transport in nanocomposite C:Co films

Authors: Shengqiang Zhou, Markus Berndt, Danilo Buerger, Viton Heera, Kay Potzger, Gintautas Abrasonis, Gyoergy Radnoczi, Gyoergy J. Kovacs, Andreas Kolitsch, Manfred Helm, Juergen Fassbender, Wolfhard Moeller, Heidemarie Schmidt

Abstract: The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resis… ▽ More The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promising candidates for carbon-based Hall sensors and spintronic devices. △ Less

Submitted 2 August, 2009; originally announced August 2009.

Comments: 13 pages, 7 figures