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kdotpy: $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice for simulating semiconductor band structures
Authors:
Wouter Beugeling,
Florian Bayer,
Christian Berger,
Jan Böttcher,
Leonid Bovkun,
Christopher Fuchs,
Maximilian Hofer,
Saquib Shamim,
Moritz Siebert,
Li-Xian Wang,
Ewelina M. Hankiewicz,
Tobias Kießling,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice. The application implements the widely used Kane model, capable of reliable predictions of transport and optical properties for a large variety of topological and non-topological materials with a zincblende crystal structu…
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The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice. The application implements the widely used Kane model, capable of reliable predictions of transport and optical properties for a large variety of topological and non-topological materials with a zincblende crystal structure. The application automates the tedious steps of simulating band structures. The user inputs the relevant physical parameters on the command line, for example materials and dimensions of the device, magnetic field, and temperature. The program constructs the appropriate matrix Hamiltonian on a discretized lattice of spatial coordinates and diagonalizes it. The physical observables are extracted from the eigenvalues and eigenvectors and saved as output. The program is highly customizable with a large set of configuration options and material parameters.
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Submitted 17 July, 2024;
originally announced July 2024.
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Counterpropagating topological and quantum Hall edge channels
Authors:
Saquib Shamim,
Pragya Shekhar,
Wouter Beugeling,
Jan Böttcher,
Andreas Budewitz,
Julian-Benedikt Mayer,
Lukas Lunczer,
Ewelina M. Hankiewicz,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transp…
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The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $ν=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.
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Submitted 13 May, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator
Authors:
Saquib Shamim,
Wouter Beugeling,
Jan Böttcher,
Pragya Shekhar,
Andreas Budewitz,
Philipp Leubner,
Lukas Lunczer,
Ewelina M. Hankiewicz,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two…
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The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions.
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Submitted 31 March, 2020;
originally announced April 2020.
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Momentum-Dependent Mass and AC Hall Conductivity of Quantum Anomalous Hall Insulators and Their Relation to the Parity Anomaly
Authors:
Christian Tutschku,
Jan Böttcher,
René Meyer,
E. M. Hankiewicz
Abstract:
The Dirac mass of a two-dimensional QAH insulator is directly related to the parity anomaly of planar quantum electrodynamics, as shown initially in Phys. Rev. Lett. 52, 18 (1984). In this work, we connect the additional momentum-dependent Newtonian mass term of a QAH insulator to the parity anomaly. By calculating the effective action, we reveal that the Newtonian mass term acts like a parity-bre…
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The Dirac mass of a two-dimensional QAH insulator is directly related to the parity anomaly of planar quantum electrodynamics, as shown initially in Phys. Rev. Lett. 52, 18 (1984). In this work, we connect the additional momentum-dependent Newtonian mass term of a QAH insulator to the parity anomaly. By calculating the effective action, we reveal that the Newtonian mass term acts like a parity-breaking element of a high-energy regularization scheme. As such, it is directly related to the parity anomaly. In addition, the calculation of the effective action allows us to determine the finite frequency correction to the DC Hall conductivity of a QAH insulator. We derive that the leading order AC correction contains a term proportional to the torsional Hall viscosity. This paves the way to measure this non-dissipative transport coefficient via electrical or magneto-optical experiments. Moreover, we prove that the Newtonian mass significantly changes the resonance structure of the AC Hall conductivity in comparison to pure Dirac systems like graphene.
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Submitted 16 July, 2020; v1 submitted 6 March, 2020;
originally announced March 2020.
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Fate of Quantum Anomalous Hall Effect in the Presence of External Magnetic Fields and Particle-Hole Asymmetry
Authors:
Jan Böttcher,
Christian Tutschku,
Ewelina M. Hankiewicz
Abstract:
The quantum anomalous Hall (QAH) effect, a condensed matter analog of the parity anomaly, is characterized by a quantized Hall conductivity in the absence of an external magnetic field. However, it has been recently shown that, even in the presence of Landau levels, the QAH effect can be distinguished from the conventional quantum Hall (QH) effect due to the parity anomaly. As a signature of this…
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The quantum anomalous Hall (QAH) effect, a condensed matter analog of the parity anomaly, is characterized by a quantized Hall conductivity in the absence of an external magnetic field. However, it has been recently shown that, even in the presence of Landau levels, the QAH effect can be distinguished from the conventional quantum Hall (QH) effect due to the parity anomaly. As a signature of this effect, we predicted coexistent counterpropagating QAH and QH edge states. In the present work, we generalize these findings to QAH insulators with broken particle-hole symmetry. In particular, we derive the connection to the spectral asymmetry, which is a topological quantity arising in the context of Dirac-like systems. Moreover, it is shown that, depending on the magnetic field direction, particle-hole asymmetry strengthens or weakens the hybridization of the counterpropagating QH and QAH edge states. Implications for ferro- or paramagnetic topological insulators are derived which paves the way towards identifying signatures of the QAH effect even in external magnetic fields.
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Submitted 12 August, 2020; v1 submitted 4 February, 2020;
originally announced February 2020.
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Survival of the quantum anomalous Hall effect in orbital magnetic fields as a consequence of the parity anomaly
Authors:
J. Böttcher,
C. Tutschku,
L. W. Molenkamp,
E. M. Hankiewicz
Abstract:
Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demon…
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Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demonstrate that the QAH phase survives in orbital fields, violates the Onsager relation, and can be therefore distinguished from a quantum Hall (QH) phase. As a fingerprint of the QAH phase in increasing orbital fields, we predict a transition from a quantized Hall plateau with $σ_\mathrm{xy}= -\mathrm{e}^2/\mathrm{h}$ to a not perfectly quantized plateau, caused by scattering processes between counterpropagating QH and QAH edge states. This transition can be especially important in paramagnetic QAH insulators, such as (Hg,Mn)Te/CdTe quantum wells, in which exchange interaction and orbital fields compete.
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Submitted 12 August, 2020; v1 submitted 16 January, 2019;
originally announced January 2019.
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Parity anomaly driven topological transitions in magnetic field
Authors:
Jan Böttcher,
Ewelina M. Hankiewicz
Abstract:
Recent developments in solid state physics give a prospect to observe the parity anomaly in (2+1)D massive Dirac systems. Here we show, that the quantum anomalous Hall (QAH) state in orbital magnetic fields originates from the Dirac mass term and induces an anomalous four-current related to the parity anomaly. This differentiates the QAH from the quantum Hall (QH) state for the experimentally rele…
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Recent developments in solid state physics give a prospect to observe the parity anomaly in (2+1)D massive Dirac systems. Here we show, that the quantum anomalous Hall (QAH) state in orbital magnetic fields originates from the Dirac mass term and induces an anomalous four-current related to the parity anomaly. This differentiates the QAH from the quantum Hall (QH) state for the experimentally relevant case of an effective constant density (seen by the gate). A direct signature of QAH phase in magnetic fields is a long $σ_{xy}= e^2/h$ ($σ_{xy}= -e^2/h$) plateau in Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$ (HgMnTe quantum wells). Furthermore, we predict a new transition between the quantum spin Hall (QSH) and the QAH state in magnetic fields, for constant effective carrier density, without magnetic impurities but driven by effective g-factors and particle-hole asymmetry. This transition can be related to the stability of edge states in the Dirac mass gap of 2D topological insulators (TIs), even in high magnetic fields.
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Submitted 20 January, 2019; v1 submitted 26 July, 2016;
originally announced July 2016.
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Observation of the universal magnetoelectric effect in a 3D topological insulator
Authors:
V. Dziom,
A. Shuvaev,
A. Pimenov,
G. V. Astakhov,
C. Ames,
K. Bendias,
J. Böttcher,
G. Tkachov,
E. M. Hankiewicz,
C. Brüne,
H Buhmann,
L. W. Molenkamp
Abstract:
The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magneto…
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The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magnetoelectric (TME) effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semi-transparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant $α= e^2 / \hbar c$ when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants.
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Submitted 17 March, 2016;
originally announced March 2016.
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Dirac-screening stabilized surface-state transport in a topological insulator
Authors:
Christoph Brüne,
Cornelius Thienel,
Michael Stuiber,
Jan Böttcher,
Hartmut Buhmann,
Elena G. Novik,
Chao-Xing Liu,
Ewelina M. Hankiewicz,
Laurens W. Molenkamp
Abstract:
We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier d…
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We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier densities the transport is surface state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows to identify the contributions from the individual surfaces. A $k \cdot p$ model can describe the experiments, but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.
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Submitted 24 July, 2014;
originally announced July 2014.
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Self-consistent $\textbf{k}\cdot \textbf{p}$ calculations for gated thin layers of 3D Topological Insulators
Authors:
Yuval Baum,
Jan Böttcher,
Christoph Brüne,
Cornelius Thienel,
Laurens W. Molenkamp,
Ady Stern,
Ewelina M. Hankiewicz
Abstract:
Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screenin…
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Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.
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Submitted 15 May, 2014;
originally announced May 2014.
