A new FDSOI spin qubit platform with 40nm effective control pitch
Authors:
T. Bédécarrats,
B. Cardoso Paz,
B. Martinez Diaz,
H. Niebojewski,
B. Bertrand1,
N. Rambal,
C. Comboroure,
A. Sarrazin,
F. Boulard,
E. Guyez,
J. -M. Hartmann,
Y. Morand,
A. Magalhaes-Lucas,
E. Nowak,
E. Catapano,
M. Cassé,
M. Urdampilleta,
Y. -M. Niquet,
F. Gaillard,
S. De Franceschi,
T. Meunier,
M. Vinet
Abstract:
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides…
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Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.
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Submitted 7 April, 2023;
originally announced April 2023.
Strong coupling between a photon and a hole spin in silicon
Authors:
Cécile X. Yu,
Simon Zihlmann,
José C. Abadillo-Uriel,
Vincent P. Michal,
Nils Rambal,
Heimanu Niebojewski,
Thomas Bedecarrats,
Maud Vinet,
Etienne Dumur,
Michele Filippone,
Benoit Bertrand,
Silvano De Franceschi,
Yann-Michel Niquet,
Romain Maurand
Abstract:
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe…
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Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.
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Submitted 9 May, 2023; v1 submitted 28 June, 2022;
originally announced June 2022.
