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Spin injection and detection in all-van der Waals 2D devices
Authors:
Jan Bärenfänger,
Klaus Zollner,
Lukas Cvitkovich,
Kenji Watanabe,
Takashi Taniguchi,
Stefan Hartl,
Jaroslav Fabian,
Jonathan Eroms,
Dieter Weiss,
Mariusz Ciorga
Abstract:
In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe$_3$GeTe$_2$ (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inj…
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In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe$_3$GeTe$_2$ (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to $P=40$\%. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.
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Submitted 5 March, 2025; v1 submitted 4 March, 2025;
originally announced March 2025.
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Quantum Hall effect and current distribution in the 3D topological insulator HgTe
Authors:
S. Hartl,
L. Freund,
M. Kühn,
J. Ziegler,
E. Richter,
W. Himmler,
J. Bärenfänger,
D. A. Kozlov,
N. N. Mikhailov,
J. Weis,
D. Weiss
Abstract:
We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the system exhibits perfectly quantized Hall plateaus at high magnetic fields. Here we study the system using three different experimental techniques: Transport exper…
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We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the system exhibits perfectly quantized Hall plateaus at high magnetic fields. Here we study the system using three different experimental techniques: Transport experiments, capacitance measurements including the quantum capacitance, and current distribution measurements using electrostatically sensitive scanning probe microscopy. Our key finding is that at sufficiently high magnetic fields, the different electronic subsystems merge into one, and the current in a quantum Hall plateau is distributed across the entire width of the Hall bar device.
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Submitted 24 October, 2024;
originally announced October 2024.
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Photogalvanic probing of helical edge channels in 2D HgTe topological insulators
Authors:
K. -M. Dantscher,
D. A. Kozlov,
M. T. Scherr,
S. Gebert,
J. Baerenfaenger,
M. V. Durnev,
S. A. Tarasenko,
V. V. Bel'kov,
N. N. Mikhailov,
S. A. Dvoretsky,
Z. D. Kvon,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in…
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We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data.
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Submitted 28 December, 2016;
originally announced December 2016.
