Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
Authors:
S. S. Krishtopenko,
A. M. Kadykov,
S. Gebert,
S. Ruffenach,
C. Consejo,
J. Torres,
C. Avogadri,
B. Jouault,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond…
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We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels.
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Submitted 27 April, 2020; v1 submitted 10 December, 2019;
originally announced December 2019.
