Showing 1–2 of 2 results for author: Audiffred, M
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Stacking dependence of carrier transport properties in multilayered black phosphorous
Authors:
A. Sengupta,
M. Audiffred,
T. Heine,
T. A. Niehaus
Abstract:
We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with Generalized Gradient Approximation (GGA) and the band…
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We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with Generalized Gradient Approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the Meta-Generalized Gradient Approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium Greens function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gap, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.
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Submitted 17 November, 2015; v1 submitted 20 August, 2015;
originally announced August 2015.
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On the electronic structure of silicene on Ag substrate: strong hybridization effects
Authors:
Seymur Cahangirov,
Martha Audiffred,
Peizhe Tang,
Amilcare Iacomino,
Wenhui Duan,
Gabriel Merino,
Angel Rubio
Abstract:
The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-stand…
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The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-standing silicene or from the sp-bands of bulk Ag and ii) assign their contribution to the description of the linearly dispersing band observed in photoemission. Furthermore, we show that silicene atoms contribute to the Fermi level, which leads to similar STM patterns as observed below or above the Fermi level. Our findings are crucial for the proper interpretation of experimental observations.
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Submitted 10 May, 2013;
originally announced May 2013.