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Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films
Authors:
Heungdong Kwon,
Asir Intisar Khan,
Christopher Perez,
Mehdi Asheghi,
Eric Pop,
Kenneth E. Goodson
Abstract:
Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X r…
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Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared to polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (~2000X) between the in-plane and cross-plane directions due to the weakly interacting van der Waals gaps. This work uncovers electro-thermal transport in SLs based on Sb2Te3 and GeTe, for improved design of low-power PCM.
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Submitted 23 July, 2021; v1 submitted 4 March, 2021;
originally announced March 2021.
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Quasi-ballistic thermal transport across MoS$_2$ thin films
Authors:
Aditya Sood,
Feng Xiong,
Shunda Chen,
Ramez Cheaito,
Feifei Lian,
Mehdi Asheghi,
Yi Cui,
Davide Donadio,
Kenneth E. Goodson,
Eric Pop
Abstract:
Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. In general, it is thought that cross-plane thermal conductivities ($κ_z$) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure $κ_z$ across MoS$_2$ films of varying thickness (20 to 240 nm) and uncover evidence of very long c-axis pho…
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Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. In general, it is thought that cross-plane thermal conductivities ($κ_z$) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure $κ_z$ across MoS$_2$ films of varying thickness (20 to 240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations reveal that ~50% of the heat is carried by phonons with MFP >200 nm, exceeding kinetic theory estimates by nearly two orders of magnitude. Because of quasi-ballistic effects, the $κ_z$ of nanometer thin films of MoS$_2$ scales with their thickness and the volumetric thermal resistance asymptotes to a non-zero value, ~10 m$^{2}$KGW$^{-1}$. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO$_2$ substrate and top-side aluminum transducer. These findings are essential for understanding heat flow across nanometer-thin films of MoS$_2$ for optoelectronic and thermoelectric applications.
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Submitted 7 March, 2019; v1 submitted 22 February, 2019;
originally announced February 2019.
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Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel doping: Towards RF-compatible phase-change devices
Authors:
Pengfei Guo,
Joshua A. Burrow,
Gary A. Sevison,
Aditya Sood,
Mehdi Asheghi,
Joshua R. Hendrickson,
Kenneth E. Goodson,
Imad Agha,
Andrew Sarangan
Abstract:
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most imp…
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High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that doping produces the desired electrical performance without adversely affecting the film's optical properties. The nickel doping level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The material's thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon doping. The advantages of this doping system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
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Submitted 5 September, 2018;
originally announced October 2018.
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Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries
Authors:
Aditya Sood,
Ramez Cheaito,
Tingyu Bai,
Heungdong Kwon,
Yekan Wang,
Chao Li,
Luke Yates,
Thomas Bougher,
Samuel Graham,
Mehdi Asheghi,
Mark Goorsky,
Kenneth E. Goodson
Abstract:
Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity. Historically, their impact on heat conduction has been studied indirectly through spatially-averag…
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Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity. Historically, their impact on heat conduction has been studied indirectly through spatially-averaged measurements, that provide little information about phonon transport near a single GB. Here, using spatially-resolved time-domain thermoreflectance (TDTR) measurements in combination with electron backscatter diffraction (EBSD), we make localized measurements of thermal conductivity within few μm of individual GBs in boron-doped polycrystalline diamond. We observe strongly suppressed thermal transport near GBs, a reduction in conductivity from ~1000 W/m-K at the center of large grains to ~400 W/m-K in the immediate vicinity of GBs. Furthermore, we show that this reduction in conductivity is measured up to ~10 μm away from a GB. A theoretical model is proposed that captures the local reduction in phonon mean-free-paths due to strongly diffuse phonon scattering at the disordered grain boundaries. Our results provide a new framework for understanding phonon-defect interactions in nanomaterials, with implications for the use of high thermal conductivity polycrystalline materials as heat sinks in electronics thermal management.
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Submitted 29 July, 2018; v1 submitted 11 April, 2018;
originally announced April 2018.
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Enhanced thermal conduction through nanostructured interfaces
Authors:
Woosung Park,
Aditya Sood,
Joonsuk Park,
Mehdi Asheghi,
Robert Sinclair,
Kenneth E. Goodson
Abstract:
Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to the interface. Here, we explore a nanostructured interface geometry that uses nonplanar features to enhance the effective interfacial conductance beyond what is…
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Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to the interface. Here, we explore a nanostructured interface geometry that uses nonplanar features to enhance the effective interfacial conductance beyond what is possible with planar interfaces. This interface consists of interdigitating Al pillars embedded within SiO2 with characteristic feature size ranging from 100 nm to 800 nm. The total sidewall surface area is modulated to highlight the impact of this additional channel by changing the pillar-to-pillar pitch L_P between 1.6 um and 200 nm while maintaining the same Al:SiO2 fill fraction. Using optical pump-probe thermoreflectance measurements, we show that the effective conductance of a ~65 nm thick fin layer monotonically increases with decreasing L_P, and that the conductance for L_P = 200 nm is more than twice the prediction for a layered stack with the same volume ratio and a planar interface. Through a combination of Boltzmann transport modeling and finite element calculations, we explore the impact of the pitch L_P and the pillar aspect ratio on effective thermal conductance. This analysis suggests that the concept of nanostructured interfaces can be extended to interfaces between diffusive and quasi-ballistic media in highly scaled devices. Our work proposes that the controlled texturing of interfaces can facilitate interfacial conduction beyond the planar interface regime, opening new avenues for thermal management at the nanoscale.
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Submitted 17 February, 2017;
originally announced February 2017.
