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Effects of anisotropy on the high field magnetoresistance of Weyl semimetals
Authors:
A. S. Dotdaev,
Ya. I. Rodionov,
K. I. Kugel,
B. A. Aronzon
Abstract:
We study the effects of anisotropy on the magnetoresistance of Weyl semimetals (WSMs) in the ultraquantum regime. We utilize the fact that many Weyl semimetals are approximately axially anisotropic. We find that anisotropy manifests itself in the strong dependence of the magnetoresistance on the polar and azimuthal angles determining the orientation of the anisotropy axis with respect to the appli…
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We study the effects of anisotropy on the magnetoresistance of Weyl semimetals (WSMs) in the ultraquantum regime. We utilize the fact that many Weyl semimetals are approximately axially anisotropic. We find that anisotropy manifests itself in the strong dependence of the magnetoresistance on the polar and azimuthal angles determining the orientation of the anisotropy axis with respect to the applied magnetic field and electric current. We also predict that the ratio of magnetoresistances in the geometries, where the magnetic field and anisotropy axes are aligned and where they are orthogonal, scales as $(v_\bot/v_\parallel)^2$ where $v_\bot$ and $v_\parallel$ are the corresponding Fermi velocities.
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Submitted 7 July, 2023;
originally announced July 2023.
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Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder
Authors:
Ya. I. Rodionov,
K. I. Kugel,
B. A. Aronzon
Abstract:
We study the effects a strong Coulomb disorder on the transverse magnetoresistance in Weyl semimetals at low temperatures. Using the diagrammatic technique and the Keldysh model to sum up the leading terms in the diagrammatic expansion, we find that the linear magnetoresistance exhibits a strong renormalization due to the long-range nature of the Coulomb interaction…
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We study the effects a strong Coulomb disorder on the transverse magnetoresistance in Weyl semimetals at low temperatures. Using the diagrammatic technique and the Keldysh model to sum up the leading terms in the diagrammatic expansion, we find that the linear magnetoresistance exhibits a strong renormalization due to the long-range nature of the Coulomb interaction $ρ_{xx} \propto H\ln(eH\hbar v^2/cT^2_{\rm imp}),\ \ Ωα^{-1/6}\ll T_{\rm imp}\ll Ω/α^{-3/4}$, where $Ω= v\sqrt{2eH\hbar/c}$ is the distance between the zeroth and the first Landau levels, $T_{\rm imp}=\hbar vn^{1/3}_{\rm imp}$ measures the strength of the impurity potential in terms of the impurity concentration $n$ and the Fermi velocity $v$, and $α= e^2/\hbar v$ is the effective fine structure constant of the material. As disorder becomes even stronger (but still in the parametric range, where the Coulomb interaction can be treated as a long-range one), we find that the magnetoresistivity becomes quadratic in the magnetic field $ρ_{xx}\propto H^2$.
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Submitted 16 November, 2022;
originally announced November 2022.
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Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers
Authors:
N. N. Kovaleva,
F. V. Kusmartsev,
A. B. Mekhiya,
I. N. Trunkin,
D. Chvostova,
A. B. Davydov,
L. N. Oveshnikov,
O. Pacherova,
I. A. Sherstnev,
A. Kusmartseva,
K. I. Kugel,
A. Dejneka,
F. A. Pudonin,
Y. Luo,
B. A. Aronzon
Abstract:
Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed o…
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Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10^3-10^5 Bohr magnetons (μ_B). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.
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Submitted 8 December, 2020; v1 submitted 22 August, 2020;
originally announced August 2020.
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Effect of disorder on the transverse magnetoresistance of Weyl semimetals
Authors:
Ya. I. Rodionov,
K. I. Kugel,
B. A. Aronzon,
Franco Nori
Abstract:
We study the effect of random potential created by different types of impurities on the transverse magnetoresistance of Weyl semimetals. It is shown that the magnetic field and temperature dependence of magnetoresistance is strongly affected by the type of impurity potential. Two limiting cases are analyzed in detail: ($i$) the ultra-quantum limit, when the applied magnetic field is so high that o…
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We study the effect of random potential created by different types of impurities on the transverse magnetoresistance of Weyl semimetals. It is shown that the magnetic field and temperature dependence of magnetoresistance is strongly affected by the type of impurity potential. Two limiting cases are analyzed in detail: ($i$) the ultra-quantum limit, when the applied magnetic field is so high that only the zeroth and first Landau levels contribute to the magnetotransport, and ($ii$) the semiclassical situation, for which a large number of Landau levels comes into play. A formal diagrammatic approach allowed us to obtain expressions for the components of the electrical conductivity tensor in both limits. In contrast to the oversimplified case of the $δ$-correlated disorder, the long-range impurity potential (including that of Coulomb impurities) introduces an additional length scale, which changes the geometry and physics of the problem. It is shown that the magnetoresistance can deviate from the linear behavior as a function of magnetic field for a certain class of impurity potentials.
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Submitted 17 November, 2020; v1 submitted 18 May, 2020;
originally announced May 2020.
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Observation of sub-kelvin superconductivity in Cd$_3$As$_2$ thin films
Authors:
A. V. Suslov,
A. B. Davydov,
L. N. Oveshnikov,
L. A. Morgun,
K. I. Kugel,
V. S. Zakhvalinskii,
E. A. Pilyuk,
A. V. Kochura,
A. P. Kuzmenko,
V. M. Pudalov,
B. A. Aronzon
Abstract:
We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also su…
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We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also supported by Raman spectra of the studied films, which are similar to those of Cd$_3$As$_2$ single crystals. The formation of superconducting phase in films under study is confirmed by the characteristic behavior of temperature and magnetic field dependence of samples resistances, as well as by the presence of pronounced zero-resistance plateaux in $dV/dI$ characteristics. The corresponding $H_c-T_c$ plots reveal a clearly pronounced linear behavior within the intermediate temperature range, similar to that observed for bulk Cd$_3$As$_2$ and Bi$_2$Se$_3$ films under pressure, suggesting the possibility of nontrivial pairing in the films under investigation. We discuss a possible role of sample inhomogeneities and crystal strains in the observed phenomena.
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Submitted 14 November, 2018;
originally announced November 2018.
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High temperature magnetism and microstructure of semiconducting ferromagnetic alloy (GaSb)$_{1-x}$(MnSb)$_{x}$
Authors:
L. N. Oveshnikov,
E. I. Nekhaeva,
A. V. Kochura,
A. B. Davydov,
M. A. Shakhov,
S. F. Marenkin,
O. A. Novodvorskii,
A. P. Kuzmenko,
A. L. Vasiliev,
B. A. Aronzon,
E. Lahderanta
Abstract:
We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, ato…
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We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggests that films under study have homogenous columnar structure in the bulk while MnSb inclusions accumulate near it's surface. This is in good agreement with high mobility values of charge carriers. Based on our data we conclude that room temperature magnetic and magnetotransport properties of the films are defined by MnSb inclusions.
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Submitted 18 March, 2018;
originally announced March 2018.
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Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu
Authors:
B. A. Aronzon,
L. N. Oveshnikov,
V. A. Prudkoglyad,
Yu. G. Selivanov,
E. G. Chizhevskii,
K. I. Kugel,
I. A. Karateev,
A. L. Vasiliev,
E. Lahderanta
Abstract:
Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu…
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Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu content. Positive magnetoresistance related to the weak antilocalization was observed up to 15K. The antilocalization was not followed by weak localization as theory predicts for nontrivial topological states. Surprisingly, the features of antilocalization were seen even at Eu content $x$ $=$ 0.21. With the increase of Eu content the transition to ferromagnetic state occurs at $x$ about 0.1 and with the Curie temperature $\approx$ 8K, that rises up to 64K for $x$ $=$ 0.21. At temperatures above 1-2 K, the dephasing length is proportional to $T^{-1/2}$ indicating the dominant contribution of inelastic $e-e$ scattering into electron phase breaking. However, at low temperatures the dephasing length saturates, that could be due to the scattering on magnetic ions.
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Submitted 18 September, 2017;
originally announced September 2017.
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Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime
Authors:
L. N. Oveshnikov,
V. A. Kulbachinskii,
A. B. Davydov,
B. A. Aronzon,
I. V. Rozhansky,
N. S. Avkeriev,
K. I. Kugel,
V. Tripathi
Abstract:
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an…
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The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an interplay between the hopping and drift conductivities. It is shown that at sufficiently low temperatures, hopping conductivity favors the mechanisms of AHE related to the geometric (Berry-Pancharatnam) phase.
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Submitted 2 July, 2015;
originally announced July 2015.
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Resonant indirect exchange via remote 2D channel
Authors:
I. V. Rozhansky,
I. V. Krainov,
N. S. Averkiev,
B. A. Aronzon,
A. B. Davydov,
K. I. Kugel,
V. Tripathi,
E. Lahderanta
Abstract:
We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant…
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We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.
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Submitted 6 February, 2015;
originally announced February 2015.
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Noise studies of magnetization dynamics in dilute magnetic semiconductor heterostructures
Authors:
V. Tripathi,
Kusum Dhochak,
B. A. Aronzon,
Bertrand Raquet,
V. V. Tugushev,
K. I. Kugel
Abstract:
We study theoretically and experimentally the frequency and temperature dependence of resistivity noise in semiconductor heterostructures delta-doped by Mn. The resistivity noise is observed to be non-monotonous as a function of frequency. As a function of temperature, the noise increases by two orders of magnitude for a resistivity increase of about 50%. We study two possible sources of resistivi…
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We study theoretically and experimentally the frequency and temperature dependence of resistivity noise in semiconductor heterostructures delta-doped by Mn. The resistivity noise is observed to be non-monotonous as a function of frequency. As a function of temperature, the noise increases by two orders of magnitude for a resistivity increase of about 50%. We study two possible sources of resistivity noise -- dynamic spin fluctuations and charge fluctuations, and find that dynamic spin fluctuations are more relevant for the observed noise data. The frequency and temperature dependence of resistivity noise provide important information on the nature of the magnetic interactions. In particular, we show how noise measurements can help resolve a long standing debate on whether the Mn-doped GaAs is an p-d Zener/RKKY or double exchange ferromagnet. Our analysis includes the effect of different kinds of disorder such as spin-glass type of interactions and a site-dilution type of disorder. We find that the resistivity noise in these structures is well described by a disordered RKKY ferromagnet model dynamics with a conserved order parameter.
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Submitted 7 June, 2012; v1 submitted 15 February, 2012;
originally announced February 2012.
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Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content
Authors:
M. A. Pankov,
B. A. Aronzon,
V. V. Rylkov,
A. B. Davydov,
V. V. Tugushev,
S. Caprara,
I. A. Likhachev,
E. M. Pashaev,
M. A. Chuev,
E. Lähderanta,
A. S. Vedeneev,
A. S. Bugaev
Abstract:
Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonst…
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Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.
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Submitted 9 February, 2012;
originally announced February 2012.
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Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer
Authors:
Vikram Tripathi,
Kusum Dhochak,
B. A. Aronzon,
V. V. Rylkov,
A. B. Davydov,
Bertrand Raquet,
Michel Goiran,
K. I. Kugel
Abstract:
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed i…
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We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.
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Submitted 25 December, 2010;
originally announced December 2010.
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Room temperature ferromagnetism and anomalous Hall effect in Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) alloys
Authors:
B. A. Aronzon,
V. V. Rylkov,
S. N. Nikolaev,
V. V. Tugushev,
S. Caprara,
V. V. Podolskii,
V. P. Lesnikov,
A. Lashkul,
R. Laiho,
R. R. Gareev,
N. S. Perov,
A. S. Semisalova
Abstract:
A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the…
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A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.
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Submitted 6 December, 2010;
originally announced December 2010.
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Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys
Authors:
B. A. Aronzon,
V. V. Rylkov,
S. N. Nikolaev,
V. V. Tugushev,
S. Caprara,
V. V. Podolskii,
V. P. Lesnikov,
A. Lashkul,
R. Laiho,
R. R. Gareev,
N. S. Perov,
A. S. Semisalova
Abstract:
A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic prope…
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A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations ("paramagnons") in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.
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Submitted 3 December, 2010;
originally announced December 2010.
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Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
Authors:
B. A. Aronzon,
M. V. Kovalchuk,
E. M. Pashaev,
M. A. Chuev,
V. V. Kvardakov,
I. A. Subbotin,
V. V. Rylkov,
M. A. Pankov,
A. S. Lagutin,
B. N. Zvonkov,
Yu. A. Danilov,
O. V. Vihrova,
A. V. Lashkul,
R. Laiho
Abstract:
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical…
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We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.
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Submitted 31 July, 2007;
originally announced August 2007.
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Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields
Authors:
V. V. Rylkov,
A. S. Lagutin,
B. A. Aronzon,
V. V. Podolskii,
V. P. Lesnikov,
M. Goiran,
J. Galibert,
B. Raquet,
J. Leotin
Abstract:
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appear…
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Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K only, whereas the saturation fields of the anomalous Hall effect resistance are much less (around 2 T at 30K). The total reduction of resistance exceeds 10 times in magnetic fields around of 10T. The obtained results are interpreted on the base of the assumptions of the non-uniform distribution of Mn atoms acting as acceptors, the local ferromagnetic transition and the percolation-like character of the film conductivity, which prevailed under conditions of the strong fluctuations of the exchange interaction. Characteristic scales of the magneto-electric nonuniformity are estimated using analysis of the mesoscopic fluctuations of the non-diagonal components of the magnetoresistivity tensor.
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Submitted 27 December, 2006;
originally announced December 2006.
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Quantum Size Effect transition in percolating nanocomposite films
Authors:
B. Raquet,
M. Goiran,
N. Negre,
J. Leotin B. Aronzon,
V. Rylkov,
E. Meilikhov
Abstract:
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and…
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We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced Quantum Size Effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.
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Submitted 16 October, 2000;
originally announced October 2000.
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Controlled Transformation of Electrical, Magnetic and Optical Material Properties by Ion Beams
Authors:
B. A. Gurovich,
D. I. Dolgy,
E. A. Kuleshova,
E. P. Velikhov,
E. D. Ol'shansky,
A. G. Domantovsky,
B. A. Aronzon,
E. Z. Meilikhov
Abstract:
Key circumstance of radical progress for technology of XXI century is the development of a technique which provides controllable producing three-dimensional patterns incorporating regions of nanometer sizes and required physical and chemical properties. Our paper for the first time proposes the method of purposeful direct transformation of the most important substance physical properties, such a…
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Key circumstance of radical progress for technology of XXI century is the development of a technique which provides controllable producing three-dimensional patterns incorporating regions of nanometer sizes and required physical and chemical properties. Our paper for the first time proposes the method of purposeful direct transformation of the most important substance physical properties, such as electrical, magnetic, optical and others by controllable modification of solid state atomic constitution.
The basis of the new technology is discovered by us effect of selective atom removing out of thin di- and polyatomic films by beams of accelerated particles. Potentials of that technique have been investigated and confirmed by our numerous experiments. It has been shown, particularly, that selective atom removing allows to transform in a controllable way insulators into metals, non-magnetics into magnetics, to change radically optical features and some other properties of materials.
The opportunity to remove selectively atoms of a certain sort out of solid state compounds is, as such, of great interest in creating technology associated primarily with needs of nanoelectronics as well as many other "nano-problems" of XXI century.
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Submitted 14 August, 2000;
originally announced August 2000.
