Showing 1–1 of 1 results for author: Ariza, M J

Stabilization of amorphous GaN by oxygen

Authors: F. Budde, B. J. Ruck, A. Koo, S. Granville, H. J. Trodahl, A. Bittar, G. V. M. Williams, M. J. Ariza, B. Bonnet, D. J. Jones, J. B. Metson, S. Rubanov, P. Munroe

Abstract: Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence… ▽ More Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN. △ Less

Submitted 26 July, 2004; originally announced July 2004.

Comments: 4 pages, 3 figures