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Nonlinear twistoptics at symmetry-broken interfaces
Authors:
Kaiyuan Yao,
Nathan R. Finney,
Jin Zhang,
Samuel L. Moore,
Lede Xian,
Nicolas Tancogne-Dejean,
Fang Liu,
Jenny Ardelean,
Xinyi Xu,
Dorri Halbertal,
K. Watanabe,
T. Taniguchi,
Hector Ochoa,
Ana Asenjo-Garcia,
Xiaoyang Zhu,
D. N. Basov,
Angel Rubio,
Cory R. Dean,
James Hone,
P. James Schuck
Abstract:
Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostru…
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Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.
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Submitted 20 August, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature
Authors:
Thomas P. Darlington,
Christian Carmesin,
Matthias Florian,
Emanuil Yanev,
Obafunso Ajayi,
Jenny Ardelean,
Daniel A. Rhodes,
Augusto Ghiotto,
Andrey Krayev,
K. Watanabe,
T. Taniguchi,
Jeffrey W. Kysar,
Abhay N. Pasupathy,
James C. Hone,
Frank Jahnke,
Nicholas J. Borys,
P. James Schuck
Abstract:
In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poor…
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In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.
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Submitted 3 March, 2020;
originally announced March 2020.
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One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers
Authors:
Yusong Bai,
Lin Zhou,
Jue Wang,
Wenjing Wu,
Leo McGilly,
Dorri Halbertal,
Chiu Fan B. Lo,
Fang Liu,
Jenny Ardelean,
Pasqual Rivera,
Nathan R. Finney,
Xuchen Yang,
Dmitri N. Basov,
Wang Yao,
Xiaodong Xu,
James Hone,
Abhay Pasupathy,
Xiaoyang Zhu
Abstract:
The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental…
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The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.
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Submitted 5 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
Authors:
D. Edelberg,
D. Rhodes,
A. Kerelsky,
B. Kim,
J. Wang,
A. Zangiabadi,
C. Kim,
A. Abhinandan,
J. Ardelean,
M. Scully,
D. Scullion,
L. Embon,
I. Zhang,
R. Zu,
Elton J. G. Santos,
L. Balicas,
C. Marianetti,
K. Barmak,
X. -Y. Zhu,
J. Hone,
A. N. Pasupathy
Abstract:
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transpo…
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Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.
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Submitted 30 April, 2018;
originally announced May 2018.
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Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities
Authors:
Yue Luo,
Gabriella D. Shepard,
Jenny V. Ardelean,
James C. Hone,
Stefan Strauf
Abstract:
Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself…
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Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself that is required for scaling. Here we demonstrate a deterministic approach to achieve Purcell-enhancement at lithographically defined locations using the sharp corner of a metal nanocube for both electric field enhancement and to deform a two-dimensional material. For a 3 by 4 array of strain-induced exciton quantum emitters formed into monolayer WSe2 we show spontaneous emission rate enhancement with Purcell-factors (FP) up to FP=1050 (average FP=272), single-photon purification, and cavity-enhanced quantum yields increasing from initially 1 % to 15 %. The utility of our nanoplasmonic platform is applicable to other 2D material, including boron nitride, opening new inroads in quantum photonics.
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Submitted 17 April, 2018;
originally announced April 2018.
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Trion Species-Resolved Quantum Beats in MoSe2
Authors:
Gabriella D. Shepard,
Jenny V. Ardelean,
Daniel A. Rhodes,
X. -Y. Zhu,
James C. Hone,
Stefan Strauf
Abstract:
Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properti…
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Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properties of trion-species directly in the linear optical response. Autocorrelation measurements reveal long dephasing times up to T2=1.16+-0.05 ps for positively charged excitons. Gate dependent measurements provide evidence that the positively-charged trion forms via spatially localized hole states making this trion less prone to dephasing in the presence of elevated hole carrier concentrations. Quantum beat signatures demonstrate coherent coupling between excitons and trions that have a dephasing time up to 0.6 ps, a two-fold increase over those in previous reports. A key merit of the prolonged exciton/trion coherences is that they were achieved in a linear optical experiment, and thus are directly relevant to applications in nanolasers, coherent control, and on-chip quantum information processing requiring long photon coherence.
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Submitted 11 September, 2017;
originally announced September 2017.
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Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers
Authors:
Obafunso A. Ajayi,
Jenny V. Ardelean,
Gabriella D. Shepard,
Jue Wang,
Abhinandan Antony,
Takeshi Taniguchi,
Kenji Watanabe,
Tony F. Heinz,
Stefan Strauf,
X. -Y. Zhu,
James C. Hone
Abstract:
Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find tha…
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Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43$\pm$0.08 meV and inhomogeneous broadening of 1.1$\pm$0.3 meV.
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Submitted 20 February, 2017;
originally announced February 2017.
