Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride
Authors:
Amedeo Carbone,
Ilia D. Breev,
Johannes Figueiredo,
Silvan Kretschmer,
Leonard Geilen,
Amine Ben Mhenni,
Johannes Arceri,
Arkady V. Krasheninnikov,
Martijn Wubs,
Alexander W. Holleitner,
Alexander Huck,
Christoph Kastl,
Nicolas Stenger
Abstract:
Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the defect creation mechanism via such irradiation is well understood, the occurrence rate of optically active negatively charged vacancies ($V_B^-$) is an open qu…
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Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the defect creation mechanism via such irradiation is well understood, the occurrence rate of optically active negatively charged vacancies ($V_B^-$) is an open question. In this work, we exploit focused helium ions to systematically generate optically active vacancy defects in hBN flakes at varying density. By comparing the density-dependent spin splitting measured by magnetic resonance to calculations based on a microscopic charge model, in which we introduce a correction term due to a constant background charge, we are able to quantify the number of $V_B^-$ defects generated by the ion irradiation. We find a lower bound for the fraction (0.2%) of all vacancies in the optically active, negatively charged state. Our results provide a protocol for measuring the generation efficiency of $V_B^-$, which is necessary for understanding and optimizing luminescent centers in hBN.
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Submitted 25 April, 2025; v1 submitted 30 January, 2025;
originally announced January 2025.
Real-space detection and manipulation of topological edge modes with ultracold atoms
Authors:
Christoph Braun,
Raphaël Saint-Jalm,
Alexander Hesse,
Johannes Arceri,
Immanuel Bloch,
Monika Aidelsburger
Abstract:
Conventional topological insulators exhibit exotic gapless edge or surface states, as a result of non-trivial bulk topological properties. In periodically-driven systems the bulk-boundary correspondence is fundamentally modified and knowledge about conventional bulk topological invariants is insufficient. While ultracold atoms provide excellent settings for clean realizations of Floquet protocols,…
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Conventional topological insulators exhibit exotic gapless edge or surface states, as a result of non-trivial bulk topological properties. In periodically-driven systems the bulk-boundary correspondence is fundamentally modified and knowledge about conventional bulk topological invariants is insufficient. While ultracold atoms provide excellent settings for clean realizations of Floquet protocols, the observation of real-space edge modes has so far remained elusive. Here we demonstrate an experimental protocol for realizing chiral edge modes in optical lattices, by creating a topological interface using a potential step that is generated with a programmable optical potential. We show how to efficiently prepare particles in these edge modes in three distinct Floquet topological regimes that are realized in a periodically-driven honeycomb lattice. Controlling the height and sharpness of the potential step, we study how edge modes emerge at the interface and how the group velocity of the particles is modified as the sharpness of the potential step is varied.
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Submitted 4 April, 2023;
originally announced April 2023.
